Synchronous DRAM Module, 8MX64, 9ns, CMOS, DIMM-144
参数名称 | 属性值 |
厂商名称 | Micron Technology |
零件包装代码 | DIMM |
包装说明 | , |
针数 | 144 |
Reach Compliance Code | unknown |
ECCN代码 | EAR99 |
访问模式 | FOUR BANK PAGE BURST |
最长访问时间 | 9 ns |
其他特性 | AUTO REFRESH, SELF REFRESH |
JESD-30 代码 | R-XDMA-N144 |
内存密度 | 536870912 bit |
内存集成电路类型 | SYNCHRONOUS DRAM MODULE |
内存宽度 | 64 |
功能数量 | 1 |
端口数量 | 1 |
端子数量 | 144 |
字数 | 8388608 words |
字数代码 | 8000000 |
工作模式 | SYNCHRONOUS |
最高工作温度 | 70 °C |
最低工作温度 | |
组织 | 8MX64 |
封装主体材料 | UNSPECIFIED |
封装形状 | RECTANGULAR |
封装形式 | MICROELECTRONIC ASSEMBLY |
认证状态 | Not Qualified |
自我刷新 | YES |
最大供电电压 (Vsup) | 3.6 V |
最小供电电压 (Vsup) | 3 V |
标称供电电压 (Vsup) | 3.3 V |
表面贴装 | NO |
技术 | CMOS |
温度等级 | COMMERCIAL |
端子形式 | NO LEAD |
端子位置 | DUAL |
MT8LSDT864HG-662B5 | MT8LSDT864HG-133B5 | MT8LSDT864LHG-133B5 | MT8LSDT864HG-13EB5 | MT8LSDT864LHG-662B5 | MT8LSDT864LHG-13EB5 | |
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描述 | Synchronous DRAM Module, 8MX64, 9ns, CMOS, DIMM-144 | Synchronous DRAM Module, 8MX64, 6ns, CMOS, DIMM-144 | Synchronous DRAM Module, 8MX64, 6ns, CMOS, DIMM-144 | Synchronous DRAM Module, 8MX64, 5.4ns, CMOS, DIMM-144 | Synchronous DRAM Module, 8MX64, 9ns, CMOS, DIMM-144 | Synchronous DRAM Module, 8MX64, 5.4ns, CMOS, DIMM-144 |
零件包装代码 | DIMM | DIMM | DIMM | DIMM | DIMM | DIMM |
针数 | 144 | 144 | 144 | 144 | 144 | 144 |
Reach Compliance Code | unknown | unknow | unknow | unknown | unknown | unknow |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
访问模式 | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST |
最长访问时间 | 9 ns | 6 ns | 6 ns | 5.4 ns | 9 ns | 5.4 ns |
其他特性 | AUTO REFRESH, SELF REFRESH | AUTO REFRESH, SELF REFRESH | AUTO REFRESH, SELF REFRESH | AUTO REFRESH, SELF REFRESH | AUTO REFRESH, SELF REFRESH | AUTO REFRESH, SELF REFRESH |
JESD-30 代码 | R-XDMA-N144 | R-XDMA-N144 | R-XDMA-N144 | R-XDMA-N144 | R-XDMA-N144 | R-XDMA-N144 |
内存密度 | 536870912 bit | 536870912 bi | 536870912 bi | 536870912 bit | 536870912 bit | 536870912 bi |
内存集成电路类型 | SYNCHRONOUS DRAM MODULE | SYNCHRONOUS DRAM MODULE | SYNCHRONOUS DRAM MODULE | SYNCHRONOUS DRAM MODULE | SYNCHRONOUS DRAM MODULE | SYNCHRONOUS DRAM MODULE |
内存宽度 | 64 | 64 | 64 | 64 | 64 | 64 |
功能数量 | 1 | 1 | 1 | 1 | 1 | 1 |
端口数量 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 144 | 144 | 144 | 144 | 144 | 144 |
字数 | 8388608 words | 8388608 words | 8388608 words | 8388608 words | 8388608 words | 8388608 words |
字数代码 | 8000000 | 8000000 | 8000000 | 8000000 | 8000000 | 8000000 |
工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
最高工作温度 | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C |
组织 | 8MX64 | 8MX64 | 8MX64 | 8MX64 | 8MX64 | 8MX64 |
封装主体材料 | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
自我刷新 | YES | YES | YES | YES | YES | YES |
最大供电电压 (Vsup) | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V |
最小供电电压 (Vsup) | 3 V | 3 V | 3 V | 3 V | 3 V | 3 V |
标称供电电压 (Vsup) | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
表面贴装 | NO | NO | NO | NO | NO | NO |
技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
温度等级 | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
端子形式 | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD |
端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
厂商名称 | Micron Technology | Micron Technology | Micron Technology | - | Micron Technology | Micron Technology |
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