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FHD1766: 产品描述Small Signal Bipolar Transistor, 2A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon,; 产品类别分立半导体晶体管; 文件大小86KB，共1页; 制造商Fenghua (HK) Electronics Ltd

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FHD1766概述

Small Signal Bipolar Transistor, 2A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon,

FHD1766规格参数

参数名称	属性值
厂商名称	Fenghua (HK) Electronics Ltd
包装说明	SMALL OUTLINE, R-PSSO-F3
Reach Compliance Code	unknown
ECCN代码	EAR99
最大集电极电流 (IC)	2 A
集电极-发射极最大电压	32 V
配置	SINGLE
最小直流电流增益 (hFE)	82
JESD-30 代码	R-PSSO-F3
元件数量	1
端子数量	3
最高工作温度	150 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
极性/信道类型	NPN
认证状态	Not Qualified
表面贴装	YES
端子形式	FLAT
端子位置	SINGLE
晶体管元件材料	SILICON
标称过渡频率 (fT)	100 MHz

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Medium Power Transistor(NPN)

DESCRIPTION & FEATURES

1) Low

CE (sat)

=0.5V(Typ)

=2A/0.2A)

2) Epitaxial planar type,

NPN silicon transistor

概述及特點

FHD1766

SOT-89

PIN ASSIGNMENT

引腳說明

PIN NAME

FUNCTION

PIN NUMBER

引腳序號

管腳符號

功½

SOT-89

BASE

COLLECTOR

EMITTER

MAXIMUM RATINGS(T

=25℃)

最大額定值

CHARACTERISTIC

特性參數

Symbol

符號

Rating

額定值

Unit

單½

Collector-Emitter Voltage

集電極-發射極電壓

Vdc

CEO

Collector-Base Voltage

集電極-基極電壓

CBO

Vdc

Emitter-Base Voltage

發射極-基極電壓

5.0

Vdc

EBO

Collector Current

集電極電流

Adc

THERMAL CHARACTERISTICS

熱特性

CHARACTERISTIC

特性參數

Symbol

符號

Max

最大值

Unit

單½

Collector Power Dissipation

集電極耗散功率

500

150，

℃

Junction and Storage Temperature結溫和儲存溫度

stg

-55 ~150

DEVICE MARKING

打標

FHD1766P=DBP(82~180)，FHD1766Q=DBQ(120~270)，FHD1766R=DBR(180~390)

ELECTRICAL CHARACTERISTICS

電特性

=25℃ unless otherwise noted

如無特殊說明，溫度為

25℃)

Symbol

Test Condition

Min

Type

Max

Unit

Characteristic

特性參數

符號

測試條件

最小值典型值最大值單½

Collector-Emitter Breakdown Voltage

集電極-發射極擊穿電壓

Collector-Base Breakdown Voltage

(BR)CEO

(BR)CBO

(BR)EBO

CBO

EBO

（

sat

）

=1.0mA

=50µA

=20V,I

=4V, I

=3V,I

=0.5A

=2A,I

=0.2A

=5V,I

=50mA,

f =100MHz

=10V,I

=0,

f=1MHZ

5.0

—

0.5

100

—

390

0.8

—

集電極-基極擊穿電壓

Emitter-Base Breakdown Voltage

發射極-基極擊穿電壓

Collector Cutoff Current

集電極截止電流

Emitter Cutoff Current

發射極截止電流

DC Current Gain

直流電流增益

Collector-Emitter Saturation Voltage

集電極-發射極½和壓降

Transition Frequency

特徵頻率

Collect Output Capacitance

輸出電容

FHD1766相似产品对比

	FHD1766	FHD1766R	FHD1766Q	FHD1766P
描述	Small Signal Bipolar Transistor, 2A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon,	Small Signal Bipolar Transistor, 2A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon,	Small Signal Bipolar Transistor, 2A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon,	Small Signal Bipolar Transistor, 2A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon,
包装说明	SMALL OUTLINE, R-PSSO-F3	SMALL OUTLINE, R-PSSO-F3	SMALL OUTLINE, R-PSSO-F3	SMALL OUTLINE, R-PSSO-F3
Reach Compliance Code	unknown	unknown	unknown	unknown
ECCN代码	EAR99	EAR99	EAR99	EAR99
最大集电极电流 (IC)	2 A	2 A	2 A	2 A
集电极-发射极最大电压	32 V	32 V	32 V	32 V
配置	SINGLE	SINGLE	SINGLE	SINGLE
最小直流电流增益 (hFE)	82	180	120	82
JESD-30 代码	R-PSSO-F3	R-PSSO-F3	R-PSSO-F3	R-PSSO-F3
元件数量	1	1	1	1
端子数量	3	3	3	3
最高工作温度	150 °C	150 °C	150 °C	150 °C
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
极性/信道类型	NPN	NPN	NPN	NPN
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	YES	YES	YES	YES
端子形式	FLAT	FLAT	FLAT	FLAT
端子位置	SINGLE	SINGLE	SINGLE	SINGLE
晶体管元件材料	SILICON	SILICON	SILICON	SILICON
标称过渡频率 (fT)	100 MHz	100 MHz	100 MHz	100 MHz
厂商名称	Fenghua (HK) Electronics Ltd	-	Fenghua (HK) Electronics Ltd	Fenghua (HK) Electronics Ltd

FHD1766

FHD1766概述

FHD1766规格参数

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FHD1766相似产品对比

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