TRANSISTOR 2 A, 60 V, 0.6 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power
参数名称 | 属性值 |
厂商名称 | Toshiba(东芝) |
包装说明 | IN-LINE, R-PSIP-T10 |
Reach Compliance Code | unknown |
ECCN代码 | EAR99 |
配置 | 2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE |
最小漏源击穿电压 | 60 V |
最大漏极电流 (ID) | 2 A |
最大漏源导通电阻 | 0.6 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码 | R-PSIP-T10 |
元件数量 | 4 |
端子数量 | 10 |
工作模式 | ENHANCEMENT MODE |
封装主体材料 | PLASTIC/EPOXY |
封装形状 | RECTANGULAR |
封装形式 | IN-LINE |
极性/信道类型 | N-CHANNEL |
认证状态 | Not Qualified |
表面贴装 | NO |
端子形式 | THROUGH-HOLE |
端子位置 | SINGLE |
晶体管元件材料 | SILICON |
MP4205 | MP5401 | MP4706 | MP3202 | MP5402 | |
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描述 | TRANSISTOR 2 A, 60 V, 0.6 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | TRANSISTOR 5 A, 60 V, 0.18 ohm, 5 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | TRANSISTOR 5 A, 120 V, 1 ohm, 4 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | TRANSISTOR 5 A, 60 V, 0.32 ohm, 3 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | TRANSISTOR 5 A, 60 V, 0.4 ohm, 5 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power |
厂商名称 | Toshiba(东芝) | Toshiba(东芝) | Toshiba(东芝) | Toshiba(东芝) | Toshiba(东芝) |
包装说明 | IN-LINE, R-PSIP-T10 | IN-LINE, R-PSIP-T12 | FLANGE MOUNT, R-PSFM-T12 | IN-LINE, R-PSIP-T8 | IN-LINE, R-PSIP-T12 |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
配置 | 2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE | COMMON SOURCE, 5 ELEMENTS WITH BUILT-IN DIODE | 2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE | COMMON SOURCE, 3 ELEMENTS WITH BUILT-IN DIODE | COMMON SOURCE, 5 ELEMENTS WITH BUILT-IN DIODE |
最小漏源击穿电压 | 60 V | 60 V | 120 V | 60 V | 60 V |
最大漏极电流 (ID) | 2 A | 5 A | 5 A | 5 A | 5 A |
最大漏源导通电阻 | 0.6 Ω | 0.18 Ω | 1 Ω | 0.32 Ω | 0.4 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码 | R-PSIP-T10 | R-PSIP-T12 | R-PSFM-T12 | R-PSIP-T8 | R-PSIP-T12 |
元件数量 | 4 | 5 | 4 | 3 | 5 |
端子数量 | 10 | 12 | 12 | 8 | 12 |
工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | IN-LINE | IN-LINE | FLANGE MOUNT | IN-LINE | IN-LINE |
极性/信道类型 | N-CHANNEL | N-CHANNEL | P-CHANNEL | N-CHANNEL | P-CHANNEL |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | NO | NO | NO | NO | NO |
端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
端子位置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON |
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