TRANSISTOR 5 A, 120 V, 1 ohm, 4 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power
| 参数名称 | 属性值 |
| 厂商名称 | Toshiba(东芝) |
| 包装说明 | FLANGE MOUNT, R-PSFM-T12 |
| Reach Compliance Code | unknown |
| ECCN代码 | EAR99 |
| 外壳连接 | ISOLATED |
| 配置 | 2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 120 V |
| 最大漏极电流 (ID) | 5 A |
| 最大漏源导通电阻 | 1 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | R-PSFM-T12 |
| 元件数量 | 4 |
| 端子数量 | 12 |
| 工作模式 | ENHANCEMENT MODE |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | FLANGE MOUNT |
| 极性/信道类型 | P-CHANNEL |
| 功耗环境最大值 | 36 W |
| 认证状态 | Not Qualified |
| 表面贴装 | NO |
| 端子形式 | THROUGH-HOLE |
| 端子位置 | SINGLE |
| 晶体管元件材料 | SILICON |
| MP4706 | MP5401 | MP4205 | MP3202 | MP5402 | |
|---|---|---|---|---|---|
| 描述 | TRANSISTOR 5 A, 120 V, 1 ohm, 4 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | TRANSISTOR 5 A, 60 V, 0.18 ohm, 5 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | TRANSISTOR 2 A, 60 V, 0.6 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | TRANSISTOR 5 A, 60 V, 0.32 ohm, 3 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | TRANSISTOR 5 A, 60 V, 0.4 ohm, 5 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power |
| 厂商名称 | Toshiba(东芝) | Toshiba(东芝) | Toshiba(东芝) | Toshiba(东芝) | Toshiba(东芝) |
| 包装说明 | FLANGE MOUNT, R-PSFM-T12 | IN-LINE, R-PSIP-T12 | IN-LINE, R-PSIP-T10 | IN-LINE, R-PSIP-T8 | IN-LINE, R-PSIP-T12 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 配置 | 2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE | COMMON SOURCE, 5 ELEMENTS WITH BUILT-IN DIODE | 2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE | COMMON SOURCE, 3 ELEMENTS WITH BUILT-IN DIODE | COMMON SOURCE, 5 ELEMENTS WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 120 V | 60 V | 60 V | 60 V | 60 V |
| 最大漏极电流 (ID) | 5 A | 5 A | 2 A | 5 A | 5 A |
| 最大漏源导通电阻 | 1 Ω | 0.18 Ω | 0.6 Ω | 0.32 Ω | 0.4 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | R-PSFM-T12 | R-PSIP-T12 | R-PSIP-T10 | R-PSIP-T8 | R-PSIP-T12 |
| 元件数量 | 4 | 5 | 4 | 3 | 5 |
| 端子数量 | 12 | 12 | 10 | 8 | 12 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | FLANGE MOUNT | IN-LINE | IN-LINE | IN-LINE | IN-LINE |
| 极性/信道类型 | P-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | P-CHANNEL |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | NO | NO | NO | NO | NO |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| 端子位置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON |
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