DATA SHEET
BIPOLAR ANALOG INTEGRATED CIRCUITS
µ
PC8119T,
µ
PC8120T
VARIABLE GAIN AMPLIFIER SILICON MMIC
FOR TRANSMITTER AGC OF DIGITAL CELLULAR TELEPHONE
DESCRIPTION
The
µ
PC8119T and
µ
PC8120T are silicon monolithic integrated circuits designed as variable gain amplifier. Due to
100 MHz to 1.9 GHz operation, these ICs are suitable for RF transmitter AGC stage of digital cellular telephone. Two
types of gain control let users choose in accordance with system design. 3 V supply voltage and mini mold package
contribute to make system lower voltage, decreased space and fewer components.
The
µ
PC8119T and
µ
PC8120T are manufactured using NEC’s 20 GHz f
T
NESAT
TM
III silicon bipolar process. This
process uses silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external
pollution and prevent corrosion / migration. Thus, this IC has excellent performance, uniformity and reliability.
FEATURES
• Recommended operating frequency : f = 100 MHz to 1.92 GHz
• Supply voltage
• Low current consumption
• Gain control voltage
• Two types of gain control
: V
CC
= 2.7 to 3.3 V
: I
CC
= 11 mA
TYP
. @ V
CC
= 3.0 V
: V
AGC
= 0.6 to 2.4 V (recommended)
:
µ
PC8119T = V
AGC
up vs. Gain down
(Forward control)
(Reverse control)
µ
PC8120T = V
AGC
up vs. Gain up
• AGC control can be constructed by external control circuit.
• High-density surface mounting
APPLICATIONS
• 1.9 GHz cordless telephone (PHS base-station and so on)
• 800 MHz to 900 MHz or 1.5 GHz Digital cellular telephone (PDC800M, PDC1.5G and so on)
ORDERING INFORMATION
Part Number
Package
6-pin minimold
Marking
C2M
C2N
Supplying Form
Embossed tape 8 mm wide.
1, 2, 3 pins face to perforation side of the tape.
Qty 3 kp/reel.
Gain Control Type
Forward control
Reverse control
µ
PC8119T-E3
µ
PC8120T-E3
Remark
To order evaluation samples, please contact your local NEC sales office.
(Part number for sample order:
µ
PC8119T,
µ
PC8120T)
Caution
Electro-static sensitive devices
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Document No. P11027EJ2V0DS00 (2nd edition)
Date Published October 1998 N CP(K)
Printed in Japan
The mark
shows major revised points.
©
1996
µ
PC8119T,
µ
PC8120T
PIN CONNECTIONS
(Top View)
(Bottom View)
4
4
3
Pin No.
1
2
Pin Name
INPUT
GND
GND
OUTPUT
V
CC
V
AGC
3
C2M
2
5
5
2
3
4
5
1
6
6
1
Marking is a example for
µ
PC8119T.
6
VARIABLE GAIN AMPLIFIER PRODUCT LINE-UP
Part No.
V
CC
(V)
4.5 to 5.5
2.7 to 3.3
2.7 to 3.3
2.7 to 3.3
2.7 to 3.3
I
CC
(mA)
15
11
11
11
11
V
AGC
(V)
3.3 to 5.0
0.6 to 2.4
0.6 to 2.4
0.6 to 2.4
0 to 2.4
V
AGC
up vs.Gain
down
down
up
up
down
f (GHz)
up to 1.1
0.1 to 1.92
0.1 to 1.92
0.8 to 1.5
0.8 to 1.5
P
O (1 dB)
–4
+3
+3
+5
+5
Low distortion
Low distortion
Excellent V
CC
fluctuation
Features
µ
PC2723T
µ
PC8119T
µ
PC8120T
µ
PC8130TA
µ
PC8131TA
Remark
Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail.
To know the associated product, please refer to each latest data sheet.
SYSTEM APPLICATION EXAMPLE
LNA
RX
DEMO
I
Q
SW
÷N
PLL
PLL
µ
PC8119T
or
µ
PC8120T
TX
PA
I
0°
φ
90°
Q
2
µ
PC8119T,
µ
PC8120T
PIN EXPLANATION
Applied
Voltage
V
–
Pin
Voltage
V
Note
Pin
No.
1
Pin Name
Function and Applications
Internal Equivalent Circuit
IN
1.2
RF input pin. This pin should be
coupled with capacitor (eg 1000
pF) for DC cut. This pin can be
input from 50
Ω
impedance signal
source without matching circuit.
Ground pin. This pin should be
connected to system ground with
minimum inductance. Ground
pattern on the board should be
formed as wide as possible.
RF output pin. This pin is
designed as open collector of
high impedance.
This pin must be externally
equipped with matching circuits.
Control
circuit
5
4
2
3
GND
0
–
4
OUT
Voltage
as same
as V
CC
through
external
inductor
2.7 to 3.3
–
1
Bias
circuit
2
3
5
V
CC
–
Supply voltage pin. This pin must
be externally equipped with low
pass filter (eg
π
type) in order to
suppress leakage from input pin.
This pin also must be equipped
with bypass capacitor (eg 1000
pF) to minimize ground
impedance.
Gain control pin. The relation
between product number and
control performance is shown
below;
Part No.
V
AGC
up vs. Gain
down
up
2
3
6
5
6
V
AGC
0 to 3.3
–
Control
circuit
µ
PC8119T
µ
PC8120T
Note
Pin voltage is measured at V
CC
= 3.0 V.
3
µ
PC8119T,
µ
PC8120T
ABSOLUTE MAXIMUM RATINGS
Parameter
Supply Voltage
Gain Control Voltage
Operating Ambient
Temperature
Storage Temperature
Power Dissipation of
Package
Symbol
V
CC
V
AGC
T
A
T
A
= +25°C
T
A
= +25°C
Conditions
Ratings
3.6
3.6
−40
to +85
Unit
V
mA
°C
T
stg
P
D
Mounted on double-sided copper-clad 50
×
50
×
1.6
mm epoxy glass PWB
T
A
= +85°C
–55 to +150
280
°C
mW
RECOMMENDED OPERATING CONDITIONS
Parameter
Supply Voltage
Symbol
V
CC
MIN.
2.7
TYP.
3.0
MAX.
3.3
Unit
V
Notice
Same voltage should be applied to 4 and 5
pins.
I
AGC
≤
0.1 mA
P
adj
≤
–60 dBc @
∆
f =
±50
kHz
Note 1
P
adj
≤
–60 dBc @
∆
f =
±600
kHz
Note 2
°C
Gain Control Voltage
Input Level
V
AGC
P
in
0.6
–
–
–
–
–
+25
2.4
–18
–10
+85
V
dBm
Operating Ambient
Temperature
Operating Frequency
AGC Pin Drive Current
T
A
–40
f
I
AGC
100
0.5
–
–
1920
–
MHz
mA
With external output-matching
V
AGC
≤
3.3 V
Notes 1.
Adjacent Channel Interference (P
adj
) wave form condition:
f = 950 MHz or 1440 MHz,
π/4QPSK
modulation signal, data rate = 42 kbps, rolloff ratio = 0.5, PN9 bits (pseudo random pattern)
2.
Adjacent Channel Interference (P
adj
) wave form condition: f = 1900 MHz,
π/4QPSK
modulation signal,
data rate = 384 kbps, rolloff ratio = 0.5, PN9 bits (pseudo random pattern)
4
µ
PC8119T,
µ
PC8120T
ELECTRICAL CHARACTERISTICS
(Unless otherwise specified, T
A
= +25°C, V
CC
= V
out
= 3.0 V, Z
S
= Z
L
= 50
Ω
, External matched output port)
µ
PC8119T
Parameter
Circuit Current
Maximum Power Gain
Gain Control Range
Note
Symbol
I
CC
G
PMAX
Test Conditions
MIN.
No signal, I
CC
= I
VCC
+ I
out
f = 950 MHz, P
in
= –30 dBm
f = 1440 MHz, P
in
= –30 dBm
f = 950 MHz, Pin = –30 dBm
f = 1440 MHz, Pin = –30 dBm
f = 950 MHz, G
PMAX
f = 1440 MHz, G
PMAX
f = 950 MHz, G
PMAX
f = 1440 MHz, G
PMAX
f = 950 MHz, G
PMAX
f = 1440 MHz, G
PMAX
f = 950 MHz, G
PMAX
f = 1440 MHz, G
PMAX
7.5
10
10
40
35
–
–
27
31
3
3
0
+1.0
TYP. MAX. MIN.
11
12.5
13
50
45
8.5
7.5
32
36
6
6
+3
+4
15
15
16
–
–
11.5
10.5
–
–
–
–
–
–
7.5
10.5
10.5
40
35
–
–
26
30
3
3
+0.5
0
TYP. MAX.
11
13
13.5
50
45
9.0
7.5
31
35
6
6
+3.5
+3
15
15.5
16.5
–
mA
dB
µ
PC8120T
Unit
GCR
dB
Noise Figure
NF
12
10.5
–
–
–
–
–
–
dB
Isolation
ISL
dB
Input Return Loss
RL
in
dB
1 dB Compression Output
Power
P
O (1 dB)
dBm
Note
Gain Control Range (GCR) specification: GCR = G
PMAX
– G
PMIN
(dB)
Conditions
µ
PC8119T: G
PMAX
@ V
AGC
= 0 V, G
PMIN
@ V
AGC
= V
CC
µ
PC8120T: G
PMAX
@ V
AGC
= V
CC
, G
PMIN
@ V
AGC
= 0 V
Remark
Measured on TEST CIRCUIT 1 and 2
STANDARD CHARACTERISTICS FOR REFERENCE
(Unless otherwise specified, T
A
= +25°C, V
CC
= V
out
= 3.0 V, Z
S
= Z
L
= 50
Ω
, External matched output port)
Reference Value
Parameter
Maximum Power Gain
Gain Control Range
Note
Noise Figure
1 dB Compression Output Power
Symbol
G
PMAX
GCR
NF
P
O (1 dB)
Test Conditions
f = 1900 MHz, P
in
= –30 dBm
f = 1900 MHz, P
in
= –30 dBm
f = 1900 MHz, G
PMAX
f = 1900 MHz, G
PMAX
µ
PC8119T
12.5
22
7.2
+3.0
µ
PC8120T
13
22
7.3
+2.5
Unit
dB
dB
dB
dBm
Note
Gain Control Range (GCR) specification: GCR = G
PMAX
– G
PMIN
(dB)
Conditions
µ
PC8119T: G
PMAX
@ V
AGC
= 0 V, G
PMIN
@ V
AGC
= V
CC
µ
PC8120T: G
PMAX
@ V
AGC
= V
CC
, G
PMIN
@ V
AGC
= 0 V
Remark
Measured on APPLICATION CIRCUIT EXAMPLE
5
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