Flash, 16MX8, 30ns, PBGA48, 6 X 8.50 MM, 0.80 MM PITCH, TBGA-48
| 参数名称 | 属性值 |
| 厂商名称 | SAMSUNG(三星) |
| 零件包装代码 | BGA |
| 包装说明 | VFBGA, |
| 针数 | 48 |
| Reach Compliance Code | compliant |
| ECCN代码 | 3A991.B.1.A |
| 最长访问时间 | 30 ns |
| 其他特性 | CONTAINS ADDITIONAL 4M BIT NAND FLASH |
| JESD-30 代码 | R-PBGA-B48 |
| 长度 | 8.5 mm |
| 内存密度 | 134217728 bit |
| 内存集成电路类型 | FLASH |
| 内存宽度 | 8 |
| 功能数量 | 1 |
| 端子数量 | 48 |
| 字数 | 16777216 words |
| 字数代码 | 16000000 |
| 工作模式 | ASYNCHRONOUS |
| 最高工作温度 | 85 °C |
| 最低工作温度 | -40 °C |
| 组织 | 16MX8 |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装代码 | VFBGA |
| 封装形状 | RECTANGULAR |
| 封装形式 | GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
| 并行/串行 | PARALLEL |
| 编程电压 | 1.8 V |
| 认证状态 | Not Qualified |
| 座面最大高度 | 1 mm |
| 最大供电电压 (Vsup) | 1.95 V |
| 最小供电电压 (Vsup) | 1.65 V |
| 标称供电电压 (Vsup) | 1.8 V |
| 表面贴装 | YES |
| 技术 | CMOS |
| 温度等级 | INDUSTRIAL |
| 端子形式 | BALL |
| 端子节距 | 0.8 mm |
| 端子位置 | BOTTOM |
| 类型 | SLC NAND TYPE |
| 宽度 | 6 mm |
| K9F2808Q0C-BIB0 | K9F2816Q0C-BCB0 | K9F2816Q0C-BIB0 | K9F2808Q0C-BCB0 | K9F2816U0C-BCB0 | K9F2816U0C-BIB0 | |
|---|---|---|---|---|---|---|
| 描述 | Flash, 16MX8, 30ns, PBGA48, 6 X 8.50 MM, 0.80 MM PITCH, TBGA-48 | Flash, 8MX16, 30ns, PBGA48, 6 X 8.50 MM, 0.80 MM PITCH, TBGA-48 | Flash, 8MX16, 30ns, PBGA48, 6 X 8.50 MM, 0.80 MM PITCH, TBGA-48 | Flash, 16MX8, 30ns, PBGA48, 6 X 8.50 MM, 0.80 MM PITCH, TBGA-48 | Flash, 8MX16, 30ns, PBGA48, 6 X 8.50 MM, 0.80 MM PITCH, TBGA-48 | Flash, 8MX16, 30ns, PBGA48, 6 X 8.50 MM, 0.80 MM PITCH, TBGA-48 |
| 厂商名称 | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) |
| 零件包装代码 | BGA | BGA | BGA | BGA | BGA | BGA |
| 包装说明 | VFBGA, | 6 X 8.50 MM, 0.80 MM PITCH, TBGA-48 | 6 X 8.50 MM, 0.80 MM PITCH, TBGA-48 | 6 X 8.50 MM, 0.80 MM PITCH, TBGA-48 | 6 X 8.50 MM, 0.80 MM PITCH, TBGA-48 | 6 X 8.50 MM, 0.80 MM PITCH, TBGA-48 |
| 针数 | 48 | 48 | 48 | 48 | 48 | 48 |
| Reach Compliance Code | compliant | compliant | compliant | compliant | compliant | compliant |
| ECCN代码 | 3A991.B.1.A | 3A991.B.1.A | 3A991.B.1.A | 3A991.B.1.A | 3A991.B.1.A | 3A991.B.1.A |
| 最长访问时间 | 30 ns | 30 ns | 30 ns | 30 ns | 30 ns | 30 ns |
| 其他特性 | CONTAINS ADDITIONAL 4M BIT NAND FLASH | CONTAINS ADDITIONAL 4M BIT NAND FLASH | CONTAINS ADDITIONAL 4M BIT NAND FLASH | CONTAINS ADDITIONAL 4M BIT NAND FLASH | CONTAINS ADDITIONAL 4M BIT NAND FLASH | CONTAINS ADDITIONAL 4M BIT NAND FLASH |
| JESD-30 代码 | R-PBGA-B48 | R-PBGA-B48 | R-PBGA-B48 | R-PBGA-B48 | R-PBGA-B48 | R-PBGA-B48 |
| 长度 | 8.5 mm | 8.5 mm | 8.5 mm | 8.5 mm | 8.5 mm | 8.5 mm |
| 内存密度 | 134217728 bit | 134217728 bit | 134217728 bit | 134217728 bit | 134217728 bit | 134217728 bit |
| 内存集成电路类型 | FLASH | FLASH | FLASH | FLASH | FLASH | FLASH |
| 内存宽度 | 8 | 16 | 16 | 8 | 16 | 16 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 48 | 48 | 48 | 48 | 48 | 48 |
| 字数 | 16777216 words | 8388608 words | 8388608 words | 16777216 words | 8388608 words | 8388608 words |
| 字数代码 | 16000000 | 8000000 | 8000000 | 16000000 | 8000000 | 8000000 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 85 °C | 70 °C | 85 °C | 70 °C | 70 °C | 85 °C |
| 组织 | 16MX8 | 8MX16 | 8MX16 | 16MX8 | 8MX16 | 8MX16 |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | VFBGA | VFBGA | VFBGA | VFBGA | VFBGA | VFBGA |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| 编程电压 | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 2.7 V | 2.7 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 座面最大高度 | 1 mm | 1 mm | 1 mm | 1 mm | 1 mm | 1 mm |
| 最大供电电压 (Vsup) | 1.95 V | 1.95 V | 1.95 V | 1.95 V | 3.6 V | 3.6 V |
| 最小供电电压 (Vsup) | 1.65 V | 1.65 V | 1.65 V | 1.65 V | 2.7 V | 2.7 V |
| 标称供电电压 (Vsup) | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 3.3 V | 3.3 V |
| 表面贴装 | YES | YES | YES | YES | YES | YES |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | INDUSTRIAL | COMMERCIAL | INDUSTRIAL | COMMERCIAL | COMMERCIAL | INDUSTRIAL |
| 端子形式 | BALL | BALL | BALL | BALL | BALL | BALL |
| 端子节距 | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm |
| 端子位置 | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
| 类型 | SLC NAND TYPE | SLC NAND TYPE | SLC NAND TYPE | SLC NAND TYPE | SLC NAND TYPE | SLC NAND TYPE |
| 宽度 | 6 mm | 6 mm | 6 mm | 6 mm | 6 mm | 6 mm |
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