SEMICONDUCTOR
RoHS
NSGM300GB..B Series
RoHS
Features
IGBT Module (2 in one-package), 300A
Typical Applications
1. High frequency operation
2. Low losses and soft switching
3. Isolated baseplate for easy heat sinking
4. Discrete super-fast recovery free-wheel diode
5. Small temperature dependence of the turn-off switching loss
48.5
25
25
AC Motor Control
DC Motor Control
UPS
Welding Power Supplies
Inverter
Electronic welders at f sw up to 20kHz
Ordering code
62.5+0.5
48+0.3
17.8
E2 G2
C2E1
E2
C1
NSGM
(1)
300
(2)
GB
(3)
xx
(4)
B
(5)
14
3-M6
G1 E1
93+0.3
108+0.5
4- 6.5
(1) For IGBT module
(2) Maximum average forward current , A
(3) 2 in one-package
30.9
14
14
2.8
4-0.5
(5) Case style
E2 G2
C2E1
E2
C1
G1 E1
All dimensions in millimeters
Electrical Characteristics
Absolute maximum ratings , T j =25 C unless otherwise specified
Symbol
IC
I CM
Pc
V CES
V GES
V iso
Tj
T stg
T
Wt
22.5
30.5
(4) Voltage code , V ( code x 10 = / V RRM )
15
27
Parameter
Collector current
Peak collector current
Maximum collector dissipation
Collector-emitter voltage
Gate-emitter voltage
Isolation voltage
Junction temperature
Storage temperature
Mounting torque , M6 main terminal
Mounting torque , M6 mounting
Approximate weight
T c =80 C
T c =25 C
Condition
Max. Value
300
600
2100
1200
+20
3000
-40 to 150
-40 to 125
3 to 5
Unit
A
A
W
V
V
V
C
C
N.m
T c =25 C , T j <150 C
G-E Short
C-E Short
Main terminal to baseplate , AC 1 min
3 to 5
370
g
Static electrical characteristics , T j =25 C unless otherwise specified
Symbol
I CES
I GES
V GE(th)
V CE(sat)
QG
V EC
Parameter
Collector-cutoff current
Gate leakage current
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Total gate charge
Emitter-collector voltage
Condition
V CE =V CES , V GE =0V
V GE =+20V , V CE =0V , T J =125 C
I C =6mA , V CE =VGE , T J =25 C
I C =300A , V GE =15V , T J =25 C
I C =300A , V GE =15V , T J =125 C
Min.
Typ.
Max.
1.0
200
Unit
mA
μ
A
V
V
5
6.2
2
2.3
3060
7
nC
2.2
V
I C =-190A , V GE =0V
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Page 1 of 4
SEMICONDUCTOR
RoHS
NSGM300GB..B Series
RoHS
Dynamic electrical characteristics , T j =25 C unless otherwise specified
Symbol
C ies
C oes
C res
t d(on)
tr
t d(off)
tf
t rr
Q rr
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time , Resistive
Rise time , Load
Turn-off delay time , Switching
Fall time , Times
Diode reverse recovery time
Diode reverse recovery charge
Condition
V GE =0V , V CE =25V
f=1MHz
Min.
Typ.
30
2
1.6
220
Max.
Unit
nF
V CC =600V , I C =300A
V GE1 =V GE2 = + 15V , R G =5
Ω
60
530
350
ns
I C =-190A , d i/dt =-150A/ s
μ
I C =-190A , d i/dt =-150A/ s
μ
12
250
ns
μ
C
Thermal and mechanical characterisitics , T j =25 C unless otherwise specified
Symbol
R th(j-c)
R th(c-f)
Parameter
Thermal resistance , junction to case
Contact thermal resistance
Per IGBT
Per FWDi
Condition
Min.
Typ.
Max.
0.09
Unit
C/W
0.24
0.05
C/W
Per module , thermal grease applied
Fig.1 Typ. output characteristic ,t
p
=80
µs; 125°C
Fig.2 Rated current vs. temperature l
c
= f (T
c
)
400
A
17V
15V
13V
11V
9V
7V
320
A
280
T
j
= 150°C
V
GE
≥ 15
V
300
240
200
160
120
200
100
t p = 80
µs
T
j
= 120°C
80
40
l
c
0
lc
0
0
V
CE
1
2
3
4
5
V
6
0
T
c
20
40
60
80
100 120 140 160
°C
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SEMICONDUCTOR
RoHS
NSGM300GB..B Series
RoHS
Fig.3 Typ. turn-on/off energy = f (l
c
)
30
mWs
25
T
j
= 125°C
V
CE
= 600V
V
GE
= ±15V
R
G
= 3
Ω
E
on
80
mWs
Fig. 4 Typ. turn-on/off energy = f (F
G
)
60
T
j
= 125°C
V
CE
= 600V
V
GE
= ±15V
I
c
= 200 A
E
on
20
15
E
off
40
E
off
20
10
5
E
0
0
l
c
100
200
A
300
E
0
0
RG
5
10
15
20
Ω
25
Fig. 5 Typ. transfer characteristic,
t p = 80µs;V
CE
= 20V
400
A
300
tp = 80
µs
V
CE
= 20 V
Fig. 6 Typ. gate charge characteristic
V
20
18
16
14
12
I
Cpuls
= 300A
600
800V
200
10
8
6
100
4
l
C
V
GE
0
0
VG
2
4
6
8
10
12
V
14
2
0
0
Q
Gate
500
1000
1500
2000
nC
2500
Fig. 7 Typ. switching times vs. l
C
1000
Fig.8 Typ. switching times vs. gate resistor R
G
T
j
= 125°C;
V
CE
= 600V; V
GE
= ± 15 V
ns
t
doff
T
j
= 125°C;
V
CE
= 600V; V
GE
= ± 15 V
R
Gon
= 2
Ω;
R
Goff
= 3
Ω;
induct. load
t
don
ns
1000
l
C
= 200 A; induct.load
t
doff
100
t
r
t
r
t
10
0 l
C
50
100 150
200 250 300
350 400
t
10
0
R
G
5
10
15
20
25
t
don
t
r
t
r
Ω
30
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Page 3 of 4
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