SEMICONDUCTOR
GBPC50M
RoHS
RoHS
N
ell
High Power Products
Glass Passivated Single-Phase Bridge Rectifier, 50A
GBPC5006M Thru GBPC5012M
FEATURES
UL recognition file number E320098
Universal 3-way terminals: snap-on, wire
wrap-around, or PCB mounting
Typical IR less than 1.0 µA
High surge current capability
Low thermal resistance
Solder dip 260°C, 10s
Compliant to RoHS
Glass passivated chips
Epoxy molding body
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave
rectification for power supply, home appliances,
office equipment, industrial automation applications.
Front
Rear
MECHANICAL DATA
Case:
GBPC molding type.
Epoxy meets UL 94 V-O flammability rating
Terminals:
Nickel plated on faston lugs,
solderable per J-STD-002 and
JESD22-B102.
Polarity:
As marked,positive lead by belevled corner
Mounting Torque:
20 inches-lbs. max. (M5 screw)
Weight:
15g (0.53 ozs)
-
~
~
+
32.0
±
0.2
6.35
±
0.2
-
32
±
0.2
26
±
0.2
~
Ø5. 50±0.2
Ø10.00±0.2
28
±
0.2
8.9
±
0.2
0.85
±
0.2
1
±
0.2
~
15
±
0.2
+
Aluminum base plate
13.3
±
0.2
5
±
0.2
All dimensions in millimeters
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Page 1 of 4
SEMICONDUCTOR
GBPC50M
RoHS
RoHS
N
ell
High Power Products
PRIMARY CHARACTERRISTICS
I
F(AV)
V
RRM
I
FSM
I
R
V
F
T
J max.
50A
600V to 1200V
500A
5
µA
1.1V
150ºC
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
GBPC50..M
PARAMETER
SYMBOL
UNIT
06
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified output current (Fig.1)
Peak forward surge current single sine-wave superimposed on
rated load
Rating (non-repetitive, for t greater than 1 ms and less than 10 ms)
for fusing
RMS isolation voltage from case to leads
Operating junction storage temperature range
I
2
t
V
ISO
T
J
,T
STG
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
08
800
560
800
50
500
10
1000
700
1000
12
1200
840
1200
V
V
V
A
A
600
420
600
1250
2500
-55
to 150
A
2
s
V
ºC
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
PARAMETER
TEST
CONDITIONS
GBPC50..M
SYMBOL
V
F
I
R
C
J
06
08
1.1
5
500
300
10
12
UNIT
V
µA
pF
Maximum instantaneous forward drop per diode
Maximum reverse DC current at rated DC blocking
voltage per diode
Typical junction capacitance per diode
I
F
= 25A
T
A
= 25°C
T
A
= 150°C
4V, 1MHz
THERMAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
PARAMETER
GBPC50..M
SYMBOL
UNIT
06
08
1.0
10
12
°C/W
Typical thermal resistance (Junction to case)
R
θJC
(1)
Notes
(1) With heatsink
(2) Bolt down on heatsink with silicone thermal compound between bridge and mounting surface for maximum heat transfer with
M5 screw
www.nellsemi.com
Page 2 of 4
SEMICONDUCTOR
GBPC50M
RoHS
RoHS
N
ell
High Power Products
Ordering Information Tabel
Device code
GBPC
1
1
2
3
4
-
-
-
-
50
2
10
3
M
4
Module type:
"GBPC"
Package,
1Φ
Bridge
l
F(AV)
rating :
"50"
for
50A
Voltage code : code x 100 = V
RRM
"
M
"
for Epoxy molded type.
Fig.1 Maximum output rectified current
70
60
Fig.2 Maximum output rectified current
50
40
30
20
10
0
0
20
40
60
80
100
120
140
160
60 HZ
Resistive or
lnductive Load
Bridges Mounted on
5
x4x3”
AL, Finned Plate
Average forward current
(A)
Average forward current
(A)
60
50
40
30
60 HZ
Resistive or
lnductive Load
R
thSA
= 0.5 °C/W
20
10
0
0
10
20
30
40
50
60
70
80
90
100
Case temperature
(°C)
Ambient temperature
(°C)
Fig.3 Maximum non-repetitive peak forward
surge current per diode
1000
100
T
J
= T
J
Max.
0.5 ms Single Sine-Wave
Fig.4 Typical Instantaneous forward
characteristics per diode
Instantaneous forward current
(A)
Peak forward surge current (A)
10
100
T
J
= 25°C
1
1.0 Cycle
10
1
10
100
0.1
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
Number of Cycles at 60 Hz
Instantaneous forward voltage (V)
www.nellsemi.com
Page 3 of 4
SEMICONDUCTOR
GBPC50M
RoHS
RoHS
N
ell
High Power Products
Fig.5 Typical reveres leakage characteristics
per diode
1000
Instantaneous reverse leakage
current (µA)
T
J
= 125°C
100
10
1
T
J
= 25°C
0.1
0
10
20
30
40
50
60
70
80
90
100
Percent of rated peak reverse voltage (%)
www.nellsemi.com
Page 4 of 4
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