Datasheet> 器件分类 > 分立半导体> 晶体管> CMLM0708ATR

CMLM0708ATR: 产品描述Small Signal Field-Effect Transistor, 0.28A I(D), 60V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, PACKAGE-6; 产品类别分立半导体晶体管; 文件大小585KB，共2页; 制造商Central Semiconductor

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CMLM0708ATR概述

Small Signal Field-Effect Transistor, 0.28A I(D), 60V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, PACKAGE-6

CMLM0708ATR规格参数

参数名称	属性值
是否Rohs认证	不符合
厂商名称	Central Semiconductor
包装说明	PACKAGE-6
针数	6
Reach Compliance Code	not_compliant
ECCN代码	EAR99
配置	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压	60 V
最大漏极电流 (Abs) (ID)	0.28 A
最大漏极电流 (ID)	0.28 A
最大漏源导通电阻	2 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)	5 pF
JESD-30 代码	R-PDSO-F6
JESD-609代码	e0
元件数量	2
端子数量	6
工作模式	ENHANCEMENT MODE
最高工作温度	150 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
峰值回流温度（摄氏度）	NOT SPECIFIED
极性/信道类型	N-CHANNEL AND P-CHANNEL
最大功率耗散 (Abs)	0.35 W
认证状态	Not Qualified
表面贴装	YES
端子面层	Tin/Lead (Sn/Pb)
端子形式	FLAT
端子位置	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED
晶体管应用	SWITCHING
晶体管元件材料	SILICON

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CMLM0708A

MULTI DISCRETE MODULE

™

SURFACE MOUNT

N-CHANNEL AND P-CHANNEL

COMPLEMENTARY MOSFETS

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMLM0708A is a

Multi Discrete Module™ consisting of complementary

N-Channel and P-Channel Enhancement-mode

MOSFETS packaged in a space saving PICOmini™

SOT-563 case. This device is designed for small

signal general purpose applications where size and

operational efficiency are prime requirements.

MARKING CODE: C78

SOT-563 CASE

FEATURES:

•

Dual Complementary MOSFETS

• Low rDS(ON) (3Ω MAX @ VGS=5.0V)

• Small SOT-563 Surface Mount Package

MAXIMUM RATINGS - CASE:

(TA=25°C)

Power Dissipation (Note 1)

Power Dissipation (Note 2)

Power Dissipation (Note 3)

Operating and Storage Junction Temperature

Thermal Resistance

MAXIMUM RATINGS:

(TA=25°C)

Drain-Source Voltage

Drain-Gate Voltage

Gate-Source Voltage

Continuous Drain Current

Continuous Source Current (Body Diode)

Maximum Pulsed Drain Current

Maximum Pulsed Source Current

SYMBOL

VDS

VDG

VGS

IDM

ISM

APPLICATIONS:

•

Switching Circuits

• DC/DC Converters

• Battery Powered Portable Equipment including Cell

Phones, Digital Cameras, Pagers, PDAs, Notebook PCs, etc.

SYMBOL

TJ, Tstg

N-Ch (Q1)

280

1.5

UNITS

°C

°C/W

UNITS

350

300

150

-65 to +150

357

P-Ch (Q2)

280

1.5

ELECTRICAL CHARACTERISTICS:

(TA=25°C unless otherwise noted)

N-Ch (Q1)

SYMBOL

TEST CONDITIONS

MIN

MAX

IGSSF, IGSSR

VGS=20V, VDS=0

100

IDSS (N-Ch)

VDS=60V, VGS=0

1.0

IDSS (P-Ch)

VDS=50V, VGS=0

IDSS (N-Ch)

VDS=60V, VGS=0, TJ=125°C

500

IDSS (P-Ch)

VDS=50V, VGS=0, TJ=125°C

500

ID(ON) (N-Ch)

VGS=10V, VDS=10V

ID(ON) (P-Ch)

VGS=10V, VDS=10V

BVDSS

VGS=0, ID=10μA

Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm

(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm

(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm

P-Ch

MIN

500

(Q2)

MAX

100

1.0

500

UNITS

μA

R1 (18-January 2010)

CMLM0708ATR相似产品对比

	CMLM0708ATR	CMLM0708ABKLEADFREE	CMLM0708ABK
描述	Small Signal Field-Effect Transistor, 0.28A I(D), 60V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, PACKAGE-6	Transistor	Small Signal Field-Effect Transistor, 0.28A I(D), 60V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, PACKAGE-6
是否Rohs认证	不符合	符合	不符合
包装说明	PACKAGE-6	,	PACKAGE-6
Reach Compliance Code	not_compliant	compliant	not_compliant
最大漏极电流 (Abs) (ID)	0.28 A	0.28 A	0.28 A
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-609代码	e0	e3	e0
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
最高工作温度	150 °C	150 °C	150 °C
极性/信道类型	N-CHANNEL AND P-CHANNEL	N-CHANNEL AND P-CHANNEL	N-CHANNEL AND P-CHANNEL
最大功率耗散 (Abs)	0.35 W	0.35 W	0.35 W
表面贴装	YES	YES	YES
端子面层	Tin/Lead (Sn/Pb)	Matte Tin (Sn)	Tin/Lead (Sn/Pb)
厂商名称	Central Semiconductor	-	Central Semiconductor
针数	6	-	6
ECCN代码	EAR99	-	EAR99
配置	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	-	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压	60 V	-	60 V
最大漏极电流 (ID)	0.28 A	-	0.28 A
最大漏源导通电阻	2 Ω	-	2 Ω
最大反馈电容 (Crss)	5 pF	-	5 pF
JESD-30 代码	R-PDSO-F6	-	R-PDSO-F6
元件数量	2	-	2
端子数量	6	-	6
封装主体材料	PLASTIC/EPOXY	-	PLASTIC/EPOXY
封装形状	RECTANGULAR	-	RECTANGULAR
封装形式	SMALL OUTLINE	-	SMALL OUTLINE
峰值回流温度（摄氏度）	NOT SPECIFIED	-	NOT SPECIFIED
认证状态	Not Qualified	-	Not Qualified
端子形式	FLAT	-	FLAT
端子位置	DUAL	-	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED	-	NOT SPECIFIED
晶体管应用	SWITCHING	-	SWITCHING
晶体管元件材料	SILICON	-	SILICON

CMLM0708ATR

CMLM0708ATR概述

CMLM0708ATR规格参数

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