Rambus DRAM, 16MX18, 45ns, CMOS, PBGA92, MICRO, BGA-92
参数名称 | 属性值 |
是否Rohs认证 | 不符合 |
厂商名称 | SK Hynix(海力士) |
零件包装代码 | BGA |
包装说明 | TFBGA, BGA92,10X18,32 |
针数 | 92 |
Reach Compliance Code | unknown |
ECCN代码 | EAR99 |
访问模式 | BLOCK ORIENTED PROTOCOL |
最长访问时间 | 45 ns |
其他特性 | SELF CONTAINED REFRESH |
最大时钟频率 (fCLK) | 800 MHz |
I/O 类型 | COMMON |
JESD-30 代码 | R-PBGA-B92 |
JESD-609代码 | e0 |
长度 | 16.66 mm |
内存密度 | 301989888 bit |
内存集成电路类型 | RAMBUS DRAM |
内存宽度 | 18 |
功能数量 | 1 |
端口数量 | 1 |
端子数量 | 92 |
字数 | 16777216 words |
字数代码 | 16000000 |
工作模式 | SYNCHRONOUS |
组织 | 16MX18 |
输出特性 | 3-STATE |
封装主体材料 | PLASTIC/EPOXY |
封装代码 | TFBGA |
封装等效代码 | BGA92,10X18,32 |
封装形状 | RECTANGULAR |
封装形式 | GRID ARRAY, THIN PROFILE, FINE PITCH |
电源 | 1.8/2.5,2.5 V |
认证状态 | Not Qualified |
座面最大高度 | 1.2 mm |
自我刷新 | YES |
最大供电电压 (Vsup) | 2.63 V |
最小供电电压 (Vsup) | 2.37 V |
标称供电电压 (Vsup) | 2.5 V |
表面贴装 | YES |
技术 | CMOS |
端子面层 | Tin/Lead (Sn/Pb) |
端子形式 | BALL |
端子节距 | 0.8 mm |
端子位置 | BOTTOM |
宽度 | 11.05 mm |
HY5R288HC845 | HY5R256HC745 | HY5R288HC840 | HY5R288HC745 | HY5R256HC845 | HY5R256HC840 | |
---|---|---|---|---|---|---|
描述 | Rambus DRAM, 16MX18, 45ns, CMOS, PBGA92, MICRO, BGA-92 | Rambus DRAM, 16MX16, 45ns, CMOS, PBGA92, MICRO, BGA-92 | Rambus DRAM, 16MX18, 40ns, CMOS, PBGA92, MICRO, BGA-92 | Rambus DRAM, 16MX18, 45ns, CMOS, PBGA92, MICRO, BGA-92 | Rambus DRAM, 16MX16, 45ns, CMOS, PBGA92, MICRO, BGA-92 | Rambus DRAM, 16MX16, 40ns, CMOS, PBGA92, MICRO, BGA-92 |
是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
厂商名称 | SK Hynix(海力士) | SK Hynix(海力士) | SK Hynix(海力士) | SK Hynix(海力士) | SK Hynix(海力士) | SK Hynix(海力士) |
零件包装代码 | BGA | BGA | BGA | BGA | BGA | BGA |
包装说明 | TFBGA, BGA92,10X18,32 | TFBGA, BGA92,10X18,32 | TFBGA, BGA92,10X18,32 | TFBGA, BGA92,10X18,32 | TFBGA, BGA92,10X18,32 | TFBGA, BGA92,10X18,32 |
针数 | 92 | 92 | 92 | 92 | 92 | 92 |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknow |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
访问模式 | BLOCK ORIENTED PROTOCOL | BLOCK ORIENTED PROTOCOL | BLOCK ORIENTED PROTOCOL | BLOCK ORIENTED PROTOCOL | BLOCK ORIENTED PROTOCOL | BLOCK ORIENTED PROTOCOL |
最长访问时间 | 45 ns | 45 ns | 40 ns | 45 ns | 45 ns | 40 ns |
其他特性 | SELF CONTAINED REFRESH | SELF CONTAINED REFRESH | SELF CONTAINED REFRESH | SELF CONTAINED REFRESH | SELF CONTAINED REFRESH | SELF CONTAINED REFRESH |
最大时钟频率 (fCLK) | 800 MHz | 711 MHz | 800 MHz | 711 MHz | 800 MHz | 800 MHz |
I/O 类型 | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
JESD-30 代码 | R-PBGA-B92 | R-PBGA-B92 | R-PBGA-B92 | R-PBGA-B92 | R-PBGA-B92 | R-PBGA-B92 |
JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 |
长度 | 16.66 mm | 16.66 mm | 16.66 mm | 16.66 mm | 16.66 mm | 16.66 mm |
内存密度 | 301989888 bit | 268435456 bit | 301989888 bit | 301989888 bit | 268435456 bit | 268435456 bi |
内存集成电路类型 | RAMBUS DRAM | RAMBUS DRAM | RAMBUS DRAM | RAMBUS DRAM | RAMBUS DRAM | RAMBUS DRAM |
内存宽度 | 18 | 16 | 18 | 18 | 16 | 16 |
功能数量 | 1 | 1 | 1 | 1 | 1 | 1 |
端口数量 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 92 | 92 | 92 | 92 | 92 | 92 |
字数 | 16777216 words | 16777216 words | 16777216 words | 16777216 words | 16777216 words | 16777216 words |
字数代码 | 16000000 | 16000000 | 16000000 | 16000000 | 16000000 | 16000000 |
工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
组织 | 16MX18 | 16MX16 | 16MX18 | 16MX18 | 16MX16 | 16MX16 |
输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装代码 | TFBGA | TFBGA | TFBGA | TFBGA | TFBGA | TFBGA |
封装等效代码 | BGA92,10X18,32 | BGA92,10X18,32 | BGA92,10X18,32 | BGA92,10X18,32 | BGA92,10X18,32 | BGA92,10X18,32 |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH |
电源 | 1.8/2.5,2.5 V | 1.8/2.5,2.5 V | 1.8/2.5,2.5 V | 1.8/2.5,2.5 V | 1.8/2.5,2.5 V | 1.8/2.5,2.5 V |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
座面最大高度 | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm |
自我刷新 | YES | YES | YES | YES | YES | YES |
最大供电电压 (Vsup) | 2.63 V | 2.63 V | 2.63 V | 2.63 V | 2.63 V | 2.63 V |
最小供电电压 (Vsup) | 2.37 V | 2.37 V | 2.37 V | 2.37 V | 2.37 V | 2.37 V |
标称供电电压 (Vsup) | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V |
表面贴装 | YES | YES | YES | YES | YES | YES |
技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
端子形式 | BALL | BALL | BALL | BALL | BALL | BALL |
端子节距 | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm |
端子位置 | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
宽度 | 11.05 mm | 11.05 mm | 11.05 mm | 11.05 mm | 11.05 mm | 11.05 mm |
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