128KX8 STANDARD SRAM, 25ns, PDSO32, 0.300 INCH, SLIM, PLASTIC, SOJ-32
| 参数名称 | 属性值 |
| 厂商名称 | Texas Instruments(德州仪器) |
| 零件包装代码 | SOJ |
| 包装说明 | SOJ, |
| 针数 | 32 |
| Reach Compliance Code | unknown |
| ECCN代码 | EAR99 |
| 最长访问时间 | 25 ns |
| JESD-30 代码 | R-PDSO-J32 |
| 长度 | 20.78 mm |
| 内存密度 | 1048576 bit |
| 内存集成电路类型 | STANDARD SRAM |
| 内存宽度 | 8 |
| 功能数量 | 1 |
| 端口数量 | 1 |
| 端子数量 | 32 |
| 字数 | 131072 words |
| 字数代码 | 128000 |
| 工作模式 | ASYNCHRONOUS |
| 最高工作温度 | 85 °C |
| 最低工作温度 | -40 °C |
| 组织 | 128KX8 |
| 输出特性 | 3-STATE |
| 可输出 | YES |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装代码 | SOJ |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 并行/串行 | PARALLEL |
| 认证状态 | Not Qualified |
| 座面最大高度 | 3.43 mm |
| 最小待机电流 | 2 V |
| 最大供电电压 (Vsup) | 3.6 V |
| 最小供电电压 (Vsup) | 3 V |
| 标称供电电压 (Vsup) | 3.3 V |
| 表面贴装 | YES |
| 技术 | CMOS |
| 温度等级 | INDUSTRIAL |
| 端子形式 | J BEND |
| 端子节距 | 1.27 mm |
| 端子位置 | DUAL |
| 宽度 | 7.52 mm |
| NMS1024X8LVM25 | NMS1024X8LVM45 | NMS1024X8LVN45 | NMS1024X8LVN35 | NMS1024X8LVM35 | NMS1024X8LVN25 | |
|---|---|---|---|---|---|---|
| 描述 | 128KX8 STANDARD SRAM, 25ns, PDSO32, 0.300 INCH, SLIM, PLASTIC, SOJ-32 | IC 128K X 8 STANDARD SRAM, 45 ns, PDSO32, 0.300 INCH, SLIM, PLASTIC, SOJ-32, Static RAM | 128KX8 STANDARD SRAM, 45ns, PDIP32, 0.300 INCH, SLIM, PLASTIC, DIP-32 | 128KX8 STANDARD SRAM, 35ns, PDIP32, 0.300 INCH, SLIM, PLASTIC, DIP-32 | 128KX8 STANDARD SRAM, 35ns, PDSO32, 0.300 INCH, SLIM, PLASTIC, SOJ-32 | 128KX8 STANDARD SRAM, 25ns, PDIP32, 0.300 INCH, SLIM, PLASTIC, DIP-32 |
| 厂商名称 | Texas Instruments(德州仪器) | Texas Instruments(德州仪器) | Texas Instruments(德州仪器) | Texas Instruments(德州仪器) | Texas Instruments(德州仪器) | Texas Instruments(德州仪器) |
| 零件包装代码 | SOJ | SOJ | DIP | DIP | SOJ | DIP |
| 包装说明 | SOJ, | SOJ, | DIP, | DIP, | SOJ, | DIP, |
| 针数 | 32 | 32 | 32 | 32 | 32 | 32 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 最长访问时间 | 25 ns | 45 ns | 45 ns | 35 ns | 35 ns | 25 ns |
| JESD-30 代码 | R-PDSO-J32 | R-PDSO-J32 | R-PDIP-T32 | R-PDIP-T32 | R-PDSO-J32 | R-PDIP-T32 |
| 内存密度 | 1048576 bit | 1048576 bit | 1048576 bit | 1048576 bit | 1048576 bit | 1048576 bit |
| 内存集成电路类型 | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM |
| 内存宽度 | 8 | 8 | 8 | 8 | 8 | 8 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端口数量 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 32 | 32 | 32 | 32 | 32 | 32 |
| 字数 | 131072 words | 131072 words | 131072 words | 131072 words | 131072 words | 131072 words |
| 字数代码 | 128000 | 128000 | 128000 | 128000 | 128000 | 128000 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C |
| 最低工作温度 | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C |
| 组织 | 128KX8 | 128KX8 | 128KX8 | 128KX8 | 128KX8 | 128KX8 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 可输出 | YES | YES | YES | YES | YES | YES |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | SOJ | SOJ | DIP | DIP | SOJ | DIP |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | SMALL OUTLINE | IN-LINE | IN-LINE | SMALL OUTLINE | IN-LINE |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 最小待机电流 | 2 V | 2 V | 2 V | 2 V | 2 V | 2 V |
| 最大供电电压 (Vsup) | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V |
| 最小供电电压 (Vsup) | 3 V | 3 V | 3 V | 3 V | 3 V | 3 V |
| 标称供电电压 (Vsup) | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
| 表面贴装 | YES | YES | NO | NO | YES | NO |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL |
| 端子形式 | J BEND | J BEND | THROUGH-HOLE | THROUGH-HOLE | J BEND | THROUGH-HOLE |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
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