128KX8 STANDARD SRAM, 45ns, PDIP32, 0.300 INCH, SLIM, PLASTIC, DIP-32
参数名称 | 属性值 |
厂商名称 | Texas Instruments(德州仪器) |
零件包装代码 | DIP |
包装说明 | DIP, |
针数 | 32 |
Reach Compliance Code | unknown |
ECCN代码 | EAR99 |
最长访问时间 | 45 ns |
JESD-30 代码 | R-PDIP-T32 |
内存密度 | 1048576 bit |
内存集成电路类型 | STANDARD SRAM |
内存宽度 | 8 |
功能数量 | 1 |
端口数量 | 1 |
端子数量 | 32 |
字数 | 131072 words |
字数代码 | 128000 |
工作模式 | ASYNCHRONOUS |
最高工作温度 | 85 °C |
最低工作温度 | -40 °C |
组织 | 128KX8 |
输出特性 | 3-STATE |
可输出 | YES |
封装主体材料 | PLASTIC/EPOXY |
封装代码 | DIP |
封装形状 | RECTANGULAR |
封装形式 | IN-LINE |
并行/串行 | PARALLEL |
认证状态 | Not Qualified |
最小待机电流 | 2 V |
最大供电电压 (Vsup) | 3.6 V |
最小供电电压 (Vsup) | 3 V |
标称供电电压 (Vsup) | 3.3 V |
表面贴装 | NO |
技术 | CMOS |
温度等级 | INDUSTRIAL |
端子形式 | THROUGH-HOLE |
端子位置 | DUAL |
NMS1024X8LVN45 | NMS1024X8LVM45 | NMS1024X8LVN35 | NMS1024X8LVM35 | NMS1024X8LVN25 | NMS1024X8LVM25 | |
---|---|---|---|---|---|---|
描述 | 128KX8 STANDARD SRAM, 45ns, PDIP32, 0.300 INCH, SLIM, PLASTIC, DIP-32 | IC 128K X 8 STANDARD SRAM, 45 ns, PDSO32, 0.300 INCH, SLIM, PLASTIC, SOJ-32, Static RAM | 128KX8 STANDARD SRAM, 35ns, PDIP32, 0.300 INCH, SLIM, PLASTIC, DIP-32 | 128KX8 STANDARD SRAM, 35ns, PDSO32, 0.300 INCH, SLIM, PLASTIC, SOJ-32 | 128KX8 STANDARD SRAM, 25ns, PDIP32, 0.300 INCH, SLIM, PLASTIC, DIP-32 | 128KX8 STANDARD SRAM, 25ns, PDSO32, 0.300 INCH, SLIM, PLASTIC, SOJ-32 |
厂商名称 | Texas Instruments(德州仪器) | Texas Instruments(德州仪器) | Texas Instruments(德州仪器) | Texas Instruments(德州仪器) | Texas Instruments(德州仪器) | Texas Instruments(德州仪器) |
零件包装代码 | DIP | SOJ | DIP | SOJ | DIP | SOJ |
包装说明 | DIP, | SOJ, | DIP, | SOJ, | DIP, | SOJ, |
针数 | 32 | 32 | 32 | 32 | 32 | 32 |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
最长访问时间 | 45 ns | 45 ns | 35 ns | 35 ns | 25 ns | 25 ns |
JESD-30 代码 | R-PDIP-T32 | R-PDSO-J32 | R-PDIP-T32 | R-PDSO-J32 | R-PDIP-T32 | R-PDSO-J32 |
内存密度 | 1048576 bit | 1048576 bit | 1048576 bit | 1048576 bit | 1048576 bit | 1048576 bit |
内存集成电路类型 | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM |
内存宽度 | 8 | 8 | 8 | 8 | 8 | 8 |
功能数量 | 1 | 1 | 1 | 1 | 1 | 1 |
端口数量 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 32 | 32 | 32 | 32 | 32 | 32 |
字数 | 131072 words | 131072 words | 131072 words | 131072 words | 131072 words | 131072 words |
字数代码 | 128000 | 128000 | 128000 | 128000 | 128000 | 128000 |
工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
最高工作温度 | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C |
最低工作温度 | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C |
组织 | 128KX8 | 128KX8 | 128KX8 | 128KX8 | 128KX8 | 128KX8 |
输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
可输出 | YES | YES | YES | YES | YES | YES |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装代码 | DIP | SOJ | DIP | SOJ | DIP | SOJ |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | IN-LINE | SMALL OUTLINE | IN-LINE | SMALL OUTLINE | IN-LINE | SMALL OUTLINE |
并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
最小待机电流 | 2 V | 2 V | 2 V | 2 V | 2 V | 2 V |
最大供电电压 (Vsup) | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V |
最小供电电压 (Vsup) | 3 V | 3 V | 3 V | 3 V | 3 V | 3 V |
标称供电电压 (Vsup) | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
表面贴装 | NO | YES | NO | YES | NO | YES |
技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
温度等级 | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL |
端子形式 | THROUGH-HOLE | J BEND | THROUGH-HOLE | J BEND | THROUGH-HOLE | J BEND |
端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
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