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IDT72B04S15LB

产品描述FIFO, 4KX9, 15ns, Asynchronous, CQCC32, LCC-32
产品类别存储    存储   
文件大小51KB,共1页
制造商IDT (Integrated Device Technology)
下载文档 详细参数 选型对比 全文预览

IDT72B04S15LB概述

FIFO, 4KX9, 15ns, Asynchronous, CQCC32, LCC-32

IDT72B04S15LB规格参数

参数名称属性值
厂商名称IDT (Integrated Device Technology)
零件包装代码QFJ
包装说明QCCN,
针数32
Reach Compliance Codeunknown
ECCN代码EAR99
最长访问时间15 ns
周期时间25 ns
JESD-30 代码R-CQCC-N32
JESD-609代码e0
内存密度36864 bit
内存宽度9
功能数量1
端子数量32
字数4096 words
字数代码4000
工作模式ASYNCHRONOUS
最高工作温度125 °C
最低工作温度-55 °C
组织4KX9
可输出NO
封装主体材料CERAMIC, METAL-SEALED COFIRED
封装代码QCCN
封装形状RECTANGULAR
封装形式CHIP CARRIER
并行/串行PARALLEL
认证状态Not Qualified
表面贴装YES
技术CMOS
温度等级MILITARY
端子面层TIN LEAD
端子形式NO LEAD
端子位置QUAD

IDT72B04S15LB相似产品对比

IDT72B04S15LB IDT72B04S15JB IDT72B04S15P IDT72B04S15PB IDT72B04S15L IDT72B04S15J IDT72B04S15DB IDT72B04S15D
描述 FIFO, 4KX9, 15ns, Asynchronous, CQCC32, LCC-32 FIFO, 4KX9, 15ns, Asynchronous, PQCC32, PLASTIC, LCC-32 FIFO, 4KX9, 15ns, Asynchronous, PDIP28, PLASTIC, DIP-28 FIFO, 4KX9, 15ns, Asynchronous, PDIP28, PLASTIC, DIP-28 FIFO, 4KX9, 15ns, Asynchronous, CQCC32, LCC-32 FIFO, 4KX9, 15ns, Asynchronous, PQCC32, PLASTIC, LCC-32 FIFO, 4KX9, 15ns, Asynchronous, CDIP28, CERDIP-28 FIFO, 4KX9, 15ns, Asynchronous, CDIP28, CERDIP-28
零件包装代码 QFJ QFJ DIP DIP QFJ QFJ DIP DIP
包装说明 QCCN, PLASTIC, LCC-32 DIP, DIP, QCCN, PLASTIC, LCC-32 DIP, DIP,
针数 32 32 28 28 32 32 28 28
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
最长访问时间 15 ns 15 ns 15 ns 15 ns 15 ns 15 ns 15 ns 15 ns
周期时间 25 ns 25 ns 25 ns 25 ns 25 ns 25 ns 25 ns 25 ns
JESD-30 代码 R-CQCC-N32 R-PQCC-J32 R-PDIP-T28 R-PDIP-T28 R-CQCC-N32 R-PQCC-J32 R-GDIP-T28 R-GDIP-T28
JESD-609代码 e0 e0 e0 e0 e0 e0 e0 e0
内存密度 36864 bit 36864 bit 36864 bit 36864 bit 36864 bit 36864 bit 36864 bit 36864 bit
内存宽度 9 9 9 9 9 9 9 9
功能数量 1 1 1 1 1 1 1 1
端子数量 32 32 28 28 32 32 28 28
字数 4096 words 4096 words 4096 words 4096 words 4096 words 4096 words 4096 words 4096 words
字数代码 4000 4000 4000 4000 4000 4000 4000 4000
工作模式 ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
最高工作温度 125 °C 125 °C 70 °C 125 °C 70 °C 70 °C 125 °C 70 °C
组织 4KX9 4KX9 4KX9 4KX9 4KX9 4KX9 4KX9 4KX9
可输出 NO NO NO NO NO NO NO NO
封装主体材料 CERAMIC, METAL-SEALED COFIRED PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY CERAMIC, METAL-SEALED COFIRED PLASTIC/EPOXY CERAMIC, GLASS-SEALED CERAMIC, GLASS-SEALED
封装代码 QCCN QCCJ DIP DIP QCCN QCCJ DIP DIP
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 CHIP CARRIER CHIP CARRIER IN-LINE IN-LINE CHIP CARRIER CHIP CARRIER IN-LINE IN-LINE
并行/串行 PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 YES YES NO NO YES YES NO NO
技术 CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 MILITARY MILITARY COMMERCIAL MILITARY COMMERCIAL COMMERCIAL MILITARY COMMERCIAL
端子面层 TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD
端子形式 NO LEAD J BEND THROUGH-HOLE THROUGH-HOLE NO LEAD J BEND THROUGH-HOLE THROUGH-HOLE
端子位置 QUAD QUAD DUAL DUAL QUAD QUAD DUAL DUAL
厂商名称 IDT (Integrated Device Technology) - IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology)

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