Standard SRAM, 128KX8, 70ns, CMOS, PDSO32, TSSOP-32
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | Integrated Silicon Solution ( ISSI ) |
| 包装说明 | TSSOP-32 |
| Reach Compliance Code | compliant |
| 最长访问时间 | 70 ns |
| I/O 类型 | COMMON |
| JESD-30 代码 | R-PDSO-G32 |
| JESD-609代码 | e0 |
| 长度 | 11 mm |
| 内存密度 | 1048576 bit |
| 内存集成电路类型 | STANDARD SRAM |
| 内存宽度 | 8 |
| 功能数量 | 1 |
| 端子数量 | 32 |
| 字数 | 131072 words |
| 字数代码 | 128000 |
| 工作模式 | ASYNCHRONOUS |
| 最高工作温度 | 70 °C |
| 最低工作温度 | |
| 组织 | 128KX8 |
| 输出特性 | 3-STATE |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装代码 | TSSOP |
| 封装等效代码 | TSSOP32,.3 |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
| 并行/串行 | PARALLEL |
| 电源 | 3/3.3 V |
| 认证状态 | Not Qualified |
| 座面最大高度 | 1.2 mm |
| 最大待机电流 | 0.00003 A |
| 最小待机电流 | 2 V |
| 最大压摆率 | 0.04 mA |
| 最大供电电压 (Vsup) | 3.6 V |
| 最小供电电压 (Vsup) | 2.7 V |
| 标称供电电压 (Vsup) | 3 V |
| 表面贴装 | YES |
| 技术 | CMOS |
| 温度等级 | COMMERCIAL |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | GULL WING |
| 端子节距 | 0.65 mm |
| 端子位置 | DUAL |
| 宽度 | 6.1 mm |
| IS62LV1024L-70Z | IS62LV1024L-45Z | IS62LV1024L-45ZI | IS62LV1024L-70ZI | IS62LV1024L-35Z | IS62LV1024L-35ZI | |
|---|---|---|---|---|---|---|
| 描述 | Standard SRAM, 128KX8, 70ns, CMOS, PDSO32, TSSOP-32 | Standard SRAM, 128KX8, 45ns, CMOS, PDSO32, TSSOP-32 | Standard SRAM, 128KX8, 45ns, CMOS, PDSO32, TSSOP-32 | Standard SRAM, 128KX8, 70ns, CMOS, PDSO32, TSSOP-32 | Standard SRAM, 128KX8, 35ns, CMOS, PDSO32, TSSOP-32 | Standard SRAM, 128KX8, 35ns, CMOS, PDSO32, TSSOP-32 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| 厂商名称 | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) |
| 包装说明 | TSSOP-32 | TSSOP-32 | TSSOP-32 | TSSOP-32 | TSSOP-32 | TSSOP-32 |
| Reach Compliance Code | compliant | compliant | compliant | compliant | compliant | compliant |
| 最长访问时间 | 70 ns | 45 ns | 45 ns | 70 ns | 35 ns | 35 ns |
| I/O 类型 | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
| JESD-30 代码 | R-PDSO-G32 | R-PDSO-G32 | R-PDSO-G32 | R-PDSO-G32 | R-PDSO-G32 | R-PDSO-G32 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 |
| 长度 | 11 mm | 11 mm | 11 mm | 11 mm | 11 mm | 11 mm |
| 内存密度 | 1048576 bit | 1048576 bit | 1048576 bit | 1048576 bit | 1048576 bit | 1048576 bit |
| 内存集成电路类型 | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM |
| 内存宽度 | 8 | 8 | 8 | 8 | 8 | 8 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 32 | 32 | 32 | 32 | 32 | 32 |
| 字数 | 131072 words | 131072 words | 131072 words | 131072 words | 131072 words | 131072 words |
| 字数代码 | 128000 | 128000 | 128000 | 128000 | 128000 | 128000 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 70 °C | 70 °C | 85 °C | 85 °C | 70 °C | 85 °C |
| 组织 | 128KX8 | 128KX8 | 128KX8 | 128KX8 | 128KX8 | 128KX8 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | TSSOP | TSSOP | TSSOP | TSSOP | TSSOP | TSSOP |
| 封装等效代码 | TSSOP32,.3 | TSSOP32,.3 | TSSOP32,.3 | TSSOP32,.3 | TSSOP32,.3 | TSSOP32,.3 |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| 电源 | 3/3.3 V | 3/3.3 V | 3/3.3 V | 3/3.3 V | 3/3.3 V | 3/3.3 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 座面最大高度 | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm |
| 最大待机电流 | 0.00003 A | 0.00003 A | 0.00005 A | 0.00005 A | 0.00003 A | 0.00005 A |
| 最小待机电流 | 2 V | 2 V | 2 V | 2 V | 2 V | 2 V |
| 最大压摆率 | 0.04 mA | 0.05 mA | 0.06 mA | 0.05 mA | 0.055 mA | 0.065 mA |
| 最大供电电压 (Vsup) | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V |
| 最小供电电压 (Vsup) | 2.7 V | 2.7 V | 2.7 V | 2.7 V | 2.7 V | 2.7 V |
| 标称供电电压 (Vsup) | 3 V | 3 V | 3 V | 3 V | 3 V | 3 V |
| 表面贴装 | YES | YES | YES | YES | YES | YES |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | COMMERCIAL | COMMERCIAL | INDUSTRIAL | INDUSTRIAL | COMMERCIAL | INDUSTRIAL |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING |
| 端子节距 | 0.65 mm | 0.65 mm | 0.65 mm | 0.65 mm | 0.65 mm | 0.65 mm |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
| 宽度 | 6.1 mm | 6.1 mm | 6.1 mm | 6.1 mm | 6.1 mm | 6.1 mm |
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