SMD
SM
Type
P-Channel Enhancement
MOSFET
IRLML6401
■
Features
●
Ultra low on-resistance.
+0.2
2.8
-0.1
MOSFET
(KRLML6401)
SOT-23-3
+0.2
2.9
-0.1
+0.1
0.4
-0.1
Unit: mm
3
●
Fast switching.
+0.2
1.6
-0.1
●
P-Channel MOSFET.
1
2
0.55
0.4
0.95
+0.1
-0.1
+0.02
0.15
-0.02
+0.1
-0.2
1.9
+0.2
1.1
-0.1
1.Base
1. Gate
+0.1
0.68
-0.1
0-0.1
2.Emitter
2. Source
3. Drain
3.collector
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current V
GS
=4.5V @ T
A
=25℃
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Power Dissipation
a
@ TA=25℃
@ TA=70℃
VGS=4.5V@ T
A
=70℃
Symbol
V
DS
V
GS
I
D
I
DM
P
D
E
AS
R
thJA
T
J
T
stg
Rating
-12
±8
-4.3
-3.4
-34
1.3
0.8
33
100
0.01
150
-55 to 150
W
mJ
℃/W
W/℃
℃
A
Unit
V
Single Pulse Avalanche Energy b
Thermal Resistance.Junction- to-Ambient
Linera Derating Factor
Junction Temperature
Junction and Storage Temperature Range
Notes:
a.Repetitive Rating :Pulse width limited by maximum junction temperature
b.Starting T
J
=25℃, L=3.5mH, R
G
=25Ω, I
AS
=-4.3A
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IRLML6401
■
Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Maximum Body-Diode Continuous Current
Diode Forward Voltage
Symbol
V
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(O
n
)
g
FS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
Q
rr
I
S
V
SD
(KRLML6401)
Test Conditions
I
D
=-250μA, V
GS
=0V
V
DS
=-12V, V
GS
=0V
V
DS
=-9.6V, V
GS
=0V, T
J
= 55℃
V
DS
=0V, V
GS
=±8V
V
DS
=V
GS
I
D
=-250μA
V
GS
=-4.5V, I
D
=-4.3A
V
GS
=-2.5V, I
D
=-2.5A
V
GS
=-1.8V, I
D
=-2A
V
DS
=-10V, I
D
=-4.3A
V
GS
=0V, V
DS
=-10V, f=1MHz
Min
-12
Typ
Max
-1
-25
±100
Unit
V
μA
nA
V
mΩ
S
-0.4
-0.55 -0.95
50
85
125
8.6
830
180
125
10
15
2.1
3.9
pF
V
GS
=-5.0V, V
DS
=-10V, I
D
=-4.3A
1.4
2.6
11
32
250
210
22
8
nC
I
D
=-1.0A, V
DS
=-6.0V, R
L
=6Ω,R
GEN
=89Ω
ns
33
12
1.3
-1.2
Nc
A
V
I
F
=-1.3A, d
I
/d
t
=-100A/μs
I
F
=-1.3A, d
I
/d
t
=-100A/μs
I
S
=-1.3A,V
GS
=0V
■
Marking
Marking
1F *
2
i
SMD Type
IRLML6401
■
Typical Characterisitics
100
100
MOSFET
(KRLML6401)
-I D, Drain-to-Source Current (A)
10
-I D, Drain-to-Source Current (A)
VGS
TOP
-7.0V
-5.0V
-4.5V
-3.0V
-2.5V
- 1.8V
-1.5V
BOTTOM -1.0V
10
VGS
-7.0V
-5.0V
-4.5V
-3.0V
-2.5V
-1.8V
-1.5V
BOTTOM -1.0V
TOP
1
1
-1.0V
-1.0V
0.1
0.1
20µs PULSE WIDTH
Tj = 25°C
0.01
0.1
1
10
100
20µs PULSE WIDTH
Tj = 150°C
0.01
0.1
1
10
100
-V DS , Drain-to-Source Voltage (V)
-VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100.0
2.0
)
-I D , Drain-to-Source Current
(Α
T J = 25°C
10.0
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= -4.3A
T J = 150°C
1.5
1.0
1.0
0.5
VDS = -12V
0.1
1.0
1.5
2.0
2.5
3.0
20µs PULSE WIDTH
3.5
4.0
0.0
-60 -40 -20
V
GS
= -4.5V
0
20
40
60
80 100 120 140 160
-V GS, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
SMD Type
IRLML6401
■
Typical Characterisitics
10
MOSFET
(KRLML6401)
1200
1000
-V
GS
, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Ciss = C + Cgd, C
gs
ds SHORTED
Crss = C
gd
I
D
=
-4.3A
V
DS
=-10V
C, Capacitance(pF)
800
Ciss
Coss = C + Cgd
ds
8
6
600
4
400
200
Coss
Crss
2
0
1
10
100
0
0
VDS, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
4
8
12
16
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
-I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10
-I
D
, Drain Current (A)
I
.
100
10us
10
100us
1ms
1
10ms
T
J
= 150
°
C
T
J
= 25
°
C
1
0.1
0.2
V
GS
= 0 V
0.6
1.0
1.4
1.8
-V
SD
,Source-to-Drain Voltage (V)
0.1
0.1
T
C
= 25 ° C
T
J
= 150 ° C
Single Pulse
-V
DS
, Drain-to-Source Voltage (V)
1
10
100
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
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SMD Type
IRLML6401
■
Typical Characterisitics
MOSFET
(KRLML6401)
E
AS
, Single Pulse Avalanche Energy (mJ)
5.0
80
4.0
-I
D
, Drain Current (A)
60
ID
-1.9A
-3.4A
BOTTOM -4.3A
TOP
3.0
40
2.0
1.0
20
0.0
25
50
T
C
, Case Temperature ( ° C)
75
100
125
150
0
25
Starting T
J
, Junction Temperature (
°
C)
50
75
100
125
150
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10.
Maximum Avalanche Energy
Vs. Drain Current
1000
Thermal Response (Z
thJA
)
100
D = 0.50
0.20
10
0.10
0.05
0.02
0.01
1
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
+ T
A
0.001
0.1
0.00001
0.0001
t
1
, Rectangular Pulse Duration (sec)
0.01
0.1
1
10
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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