AON6796
30V N-Channel MOSFET
General Description
• Trench Power αMOS Technology
• Low R
DS(ON)
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
Product Summary
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=4.5V)
30V
70A
< 3.9mΩ
< 5mΩ
Applications
• DC/DC Converters in Computing
• Isolated DC/DC Converters in Telecom and Industrial
100% UIS Tested
100% Rg Tested
DFN5X6
Top View
Bottom View
1
2
3
4
D
Top View
SRFET
TM
Soft Recovery
MOSFET:
Integrated Schottky Diode
8
7
6
5
G
S
PIN1
PIN1
Orderable Part Number
AON6796
Package Type
DFN 5x6
Form
Tape & Reel
Minimum Order Quantity
3000
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Continuous Drain
Current
Avalanche Current
Avalanche energy
V
DS
Spike
Power Dissipation
Power Dissipation
B
C
Symbol
V
DS
V
GS
T
C
=25°C
T
C
=100°C
C
Maximum
30
±12
70
46
120
32
26
30
23
36
31
13
6.2
4
-55 to 150
Units
V
V
A
I
D
I
DM
I
DSM
I
AS
T
A
=25°C
T
A
=70°C
L=0.05mH
10µs
T
C
=25°C
T
C
=100°C
T
A
=25°C
A
C
A
A
mJ
V
W
W
°C
E
AS
V
SPIKE
P
D
P
DSM
T
J
, T
STG
T
A
=70°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Case
Symbol
t ≤ 10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
15
40
3.1
Max
20
50
4
Units
°C/W
°C/W
°C/W
Rev. 1.0: January 2015
www.aosmd.com
Page 1 of 6
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Symbol
Parameter
Conditions
I
D
=10mA, V
GS
=0V
V
DS
=30V, V
GS
=0V
T
J
=55°C
V
DS
=0V, V
GS
=±12V
V
DS
=V
GS,
I
D
=250µA
V
GS
=10V, I
D
=20A
R
DS(ON)
g
FS
V
SD
I
S
Static Drain-Source On-Resistance
V
GS
=4.5V, I
D
=20A
Forward Transconductance
Diode Forward Voltage
V
DS
=5V, I
D
=20A
I
S
=1A,V
GS
=0V
T
J
=125°C
1.1
1.5
3.2
4.6
4
125
0.53
0.7
36
1350
V
GS
=0V, V
DS
=15V, f=1MHz
f=1MHz
0.9
450
60
1.8
23
V
GS
=10V, V
DS
=15V, I
D
=20A
10.5
4
3
6.5
V
GS
=10V, V
DS
=15V, R
L
=0.75Ω,
R
GEN
=3Ω
I
F
=20A, dI/dt=500A/µs
2.5
26
3.5
13
22
2.7
Min
30
0.5
100
±100
1.9
3.9
5.6
5
Typ
Max
Units
V
mA
nA
V
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
C
iss
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Q
g
(10V) Total Gate Charge
Q
g
(4.5V) Total Gate Charge
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=20A, dI/dt=500A/µs
A. The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The Power
dissipation P
DSM
is based on R
θJA
t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation P
D
is based on T
J(MAX)
=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature T
J(MAX)
=150°C.
D. The R
θJA
is the sum of the thermal impedance from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T
J(MAX)
=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev. 1.0: January 2015
www.aosmd.com
Page 2 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
3V
60
4.5V
60
10V
I
D
(A)
40
2.5V
I
D
(A)
40
80
V
DS
=5V
125°C
25°C
20
V
GS
=2V
0
0
1
2
3
4
5
20
0
0
1
2
3
4
5
V
DS
(Volts)
Figure 1: On-Region Characteristics (Note E)
8
Normalized On-Resistance
1.8
V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
1.6
6
R
DS(ON)
(mΩ)
V
GS
=4.5V
4
V
GS
=10V
I
D
=20A
1.4
1.2
V
GS
=4.5V
I
D
=20A
2
V
GS
=10V
1
0
0
5
10
15
20
25
30
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
10
I
D
=20A
8
R
DS(ON)
(mΩ)
0.8
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
1.0E+01
1.0E+00
1.0E-01
I
S
(A)
125°C
6
125°C
1.0E-02
1.0E-03
25°C
4
2
25°C
1.0E-04
1.0E-05
0
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
Rev. 1.0: January 2015
www.aosmd.com
Page 3 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V
DS
=15V
I
D
=20A
8
1500
6
Capacitance (pF)
V
GS
(Volts)
C
iss
2000
1000
C
oss
500
C
rss
4
2
0
0
5
10
15
20
25
0
0
5
10
15
20
25
30
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
1000.0
10µs
V
DS
(Volts)
Figure 8: Capacitance Characteristics
500
400
Power (W)
T
J(Max)
=150°C
T
C
=25°C
100.0
R
DS(ON)
limited
I
D
(Amps)
10.0
10µs
DC
100µs
1ms
10ms
300
200
100
0
1E-05 0.0001 0.001
1.0
0.1
T
J(Max)
=150°C
T
C
=25°C
0.0
0.01
1
10
V
DS
(Volts)
V
GS
> or equal to 4.5V
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
0.1
100
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
Z
θJC
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
R
θJC
=4°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
Single Pulse
P
D
T
on
T
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev. 1.0: January 2015
www.aosmd.com
Page 4 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
80
Power Dissipation (W)
30
Current rating I
D
(A)
0
25
50
75
100
125
150
60
20
40
10
20
0
T
CASE
(°C)
Figure 12: Power De-rating (Note F)
0
0
25
50
75
100
125
150
T
CASE
(°C)
Figure 13: Current De-rating (Note F)
1000
T
A
=25°C
100
Power (W)
10
1
1E-05
0.001
0.1
10
1000
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
Z
θJA
Normalized Transient
Thermal Resistance
10
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
R
θJA
=50°C/W
0.1
P
D
T
on
0.01
Single Pulse
0.001
1E-05
T
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev. 1.0: January 2015
www.aosmd.com
Page 5 of 6
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