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2038-42-SM-RP-LF: 产品描述UNIDIRECTIONAL, SILICON, TVS DIODE, ROHS COMPLIANT PACKAGE; 产品类别分立半导体二极管; 文件大小293KB，共3页; 制造商Bourns; 官网地址http://www.bourns.com; 标准

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2038-42-SM-RP-LF概述

UNIDIRECTIONAL, SILICON, TVS DIODE, ROHS COMPLIANT PACKAGE

2038-42-SM-RP-LF规格参数

参数名称	属性值
是否无铅	不含铅
是否Rohs认证	符合
包装说明	ROHS COMPLIANT PACKAGE
Reach Compliance Code	compli
配置	SINGLE
二极管元件材料	SILICON
二极管类型	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-609代码	e3
湿度敏感等级	1
元件数量	1
峰值回流温度（摄氏度）	NOT SPECIFIED
极性	UNIDIRECTIONAL
认证状态	Not Qualified
技术	AVALANCHE
端子面层	TIN
处于峰值回流温度下的最长时间	NOT SPECIFIED
Base Number Matches	1

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VE S CO

AV R M

AI SIO PL

LA N IA

BL S NT

Features

■

Balanced Mini-TRIGARD

™

(5 mm diameter, 7.3 mm length)

Ideal for board level protection of broad-

band circuits

Symmetrical breakdown voltage

(L-L, L-G)

■

Leadless, surface mount for economical

assembly

High surge current rating, low insertion

loss

Stable breakdown throughout life

RoHS compliant* versions available

2038 Series Miniature Symmetrical 3-Electrode Surface Mount Gas Discharge Tube

Bourns offers a symmetrical surface mount (SM) 3-electrode GDT surge protection device. The industry-leading quality and features of

the Bourns

miniature-TRIGARD

series GDT continue in the 2038 symmetrical version. The 2038 series is ideal for board level

protection of high bandwidth applications such as xDSL, cable broadband and high speed Ethernet, due to its symmetrical turn on

characteristics as well as high energy-handling capability, long and stable life performance and low capacitance of less than 1 pF. The

2038 series’ breakdown voltages are nearly equal line to line as well as line to ground. Typical 3-electrode GDT line-line breakdown

voltages are 1.8-2 times higher than the line to ground breakdown voltage. Bourns

Gas Discharge Tubes (GDT) are designed to

prevent damage from transient disturbances by acting as a “crowbar” in creating a virtual short-to-ground circuit during conduction.

When an electrical surge exceeds the defined breakdown voltage level of the GDT, the device becomes ionized and rapid conduction

takes place. When the surge passes and the system voltage returns to normal levels, the GDT returns to its high-impedance (off) state.

Characteristics

Test Methods per ITU-T (CCITT) K.12 and IEEE C62.31

Model No.

Characteristic

DC Sparkover ± 20% @ 100 V/s

L1/L2 to Grnd and Line 1 to Line 2

Typical Impulse Sparkover

L1/L2 to Grnd and Line 1 to Line 2

100V/µs

1000V/µs

2038-15-SM

150 V

2038-20-SM

200 V

2038-23-SM

230 V

2038-30-SM

300 V

2038-35-SM

350 V

500 V

425 V

575 V

450 V

600 V

Model No.

500 V

650 V

600 V

750 V

Characteristic

DC Sparkover ± 20% @ 100 V/s

L1/L2 to Grnd and Line 1 to Line 2

Typical Impulse Sparkover

L1/L2 to Grnd and Line 1 to Line 2

100V/µs

1000V/µs

2038-42-SM

420 V

2038-47-SM

470 V

2038-60-SM

600 V

2038-80-SM

800 V

2038-110-SM

1100 V

675 V

850 V

750 V

950 V

850 V

1100 V

1150 V

1400 V

1500 V

1700 V

Impulse Transverse Delay.......................................100 V/µs...................................................................................< 75 ns

Insulation Resistance (IR) .......................................100 V ..............................................................................> 10

Ω

Glow Voltage ..........................................................10 mA .............................................................................~ 70 V

Arc Voltage .............................................................1 A ..................................................................................~ 10 V

Glow-Arc Transition Current ...........................................................................................................................< 0.5 A

Capacitance ...........................................................1 MHz .............................................................................< 1 pF

DC Holdover Voltage

............................................135 V ..............................................................................< 150 ms

Impulse Discharge Current.....................................10000 A, 8/20 µs

...........................................................1 operation min.

5000 A, 8/20 µs ..............................................................> 10 operations

200 A, 10/1000 µs ..........................................................> 300 operations

200 A, 10/700 µs ...........................................................> 500 operations

10 A, 10/1000 µs ...........................................................> 1500 operations

Alternating Discharge Current ................................10 Arms, 1 s

..................................................................1 operation min.

5 Arms, 1 s .....................................................................> 10 operations

Operating Temperature ..................................................................................................................................-40 to +90 °C

Notes:

UL Recognition pending.

The rated discharge current for Mini-TRIGARD

™

GDTs is the total current equally divided between each line to ground.

Sparkover limits after life ±25 %. IR >10

Ω

(+30 %, -25 % for 2038-60,-80 and -110).

Operating characteristics per RUS PE-80 and Telcordia GR 1361 available on request.

Network applied.

DC Sparkover may exceed ±25 % but will continue to protect without venting.

*RoHS Directive 2002/95/EC Jan 27 2003 including Annex.

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

2038-42-SM-RP-LF相似产品对比

	2038-42-SM-RP-LF	2038-110-SM-RP-LF	2038-35-SM-RP-LF	2038-60-SM-RP-LF	2038-80-SM-RP-LF	2038-47-SM-RP-LF	2038-30-SM-RP-LF	2038-23-SM-RP-LF	2038-20-SM-RP-LF
描述	UNIDIRECTIONAL, SILICON, TVS DIODE, ROHS COMPLIANT PACKAGE	UNIDIRECTIONAL, SILICON, TVS DIODE, ROHS COMPLIANT PACKAGE	UNIDIRECTIONAL, SILICON, TVS DIODE, ROHS COMPLIANT PACKAGE	UNIDIRECTIONAL, SILICON, TVS DIODE, ROHS COMPLIANT PACKAGE	UNIDIRECTIONAL, SILICON, TVS DIODE, ROHS COMPLIANT PACKAGE	UNIDIRECTIONAL, SILICON, TVS DIODE, ROHS COMPLIANT PACKAGE	UNIDIRECTIONAL, SILICON, TVS DIODE, ROHS COMPLIANT PACKAGE	UNIDIRECTIONAL, SILICON, TVS DIODE, ROHS COMPLIANT PACKAGE	UNIDIRECTIONAL, SILICON, TVS DIODE, ROHS COMPLIANT PACKAGE
是否无铅	不含铅	不含铅	不含铅	不含铅	不含铅	不含铅	不含铅	不含铅	不含铅
是否Rohs认证	符合	符合	符合	符合	符合	符合	符合	符合	符合
Reach Compliance Code	compli	compli	compli	compli	compli	compli	compli	compli	compli
配置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
二极管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
二极管类型	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-609代码	e3	e3	e3	e3	e3	e3	e3	e3	e3
湿度敏感等级	1	1	1	1	1	1	1	1	1
元件数量	1	1	1	1	1	1	1	1	1
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
极性	UNIDIRECTIONAL	UNIDIRECTIONAL	UNIDIRECTIONAL	UNIDIRECTIONAL	UNIDIRECTIONAL	UNIDIRECTIONAL	UNIDIRECTIONAL	UNIDIRECTIONAL	UNIDIRECTIONAL
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
技术	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE
端子面层	TIN	TIN	TIN	TIN	TIN	TIN	TIN	TIN	TIN
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Base Number Matches	1	1	1	1	1	1	1	1	1

2038-42-SM-RP-LF

2038-42-SM-RP-LF概述

2038-42-SM-RP-LF规格参数

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2038-42-SM-RP-LF相似产品对比

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