Standard SRAM, 1MX18, 0.45ns, CMOS, PBGA165
参数名称 | 属性值 |
是否无铅 | 含铅 |
是否Rohs认证 | 不符合 |
厂商名称 | IDT (Integrated Device Technology) |
Reach Compliance Code | not_compliant |
最长访问时间 | 0.45 ns |
最大时钟频率 (fCLK) | 333 MHz |
I/O 类型 | COMMON |
JESD-30 代码 | R-PBGA-B165 |
JESD-609代码 | e0 |
内存密度 | 18874368 bit |
内存集成电路类型 | STANDARD SRAM |
内存宽度 | 18 |
湿度敏感等级 | 3 |
端子数量 | 165 |
字数 | 1048576 words |
字数代码 | 1000000 |
工作模式 | SYNCHRONOUS |
组织 | 1MX18 |
输出特性 | 3-STATE |
封装主体材料 | PLASTIC/EPOXY |
封装代码 | BGA |
封装等效代码 | BGA165,11X15,40 |
封装形状 | RECTANGULAR |
封装形式 | GRID ARRAY |
并行/串行 | PARALLEL |
峰值回流温度(摄氏度) | 225 |
电源 | 1.5/1.8,1.8 V |
认证状态 | Not Qualified |
最小待机电流 | 1.7 V |
表面贴装 | YES |
技术 | CMOS |
端子面层 | TIN LEAD |
端子形式 | BALL |
端子节距 | 1 mm |
端子位置 | BOTTOM |
处于峰值回流温度下的最长时间 | 20 |
IDT71P71804S333BQ8 | IDT71P71804S300BQ8 | IDT71P71804S300BQ | IDT71P71804S333BQ | 71P71804S300BQ | 71P71804S300BQ8 | 71P71804S333BQ | 71P71604S333BQ | 71P71604S333BQ8 | |
---|---|---|---|---|---|---|---|---|---|
描述 | Standard SRAM, 1MX18, 0.45ns, CMOS, PBGA165 | Standard SRAM, 1MX18, 0.45ns, CMOS, PBGA165 | Standard SRAM, 1MX18, 0.45ns, CMOS, PBGA165 | Standard SRAM, 1MX18, 0.45ns, CMOS, PBGA165 | CABGA-165, Tray | CABGA-165, Reel | CABGA-165, Tray | CABGA-165, Tray | CABGA-165, Reel |
是否无铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 |
是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
厂商名称 | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) |
Reach Compliance Code | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant | _compli | _compli |
最长访问时间 | 0.45 ns | 0.45 ns | 0.45 ns | 0.45 ns | 0.45 ns | 0.45 ns | 0.45 ns | 0.45 ns | 0.45 ns |
最大时钟频率 (fCLK) | 333 MHz | 300 MHz | 300 MHz | 333 MHz | 300 MHz | 300 MHz | 333 MHz | 333 MHz | 333 MHz |
I/O 类型 | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
JESD-30 代码 | R-PBGA-B165 | R-PBGA-B165 | R-PBGA-B165 | R-PBGA-B165 | R-PBGA-B165 | R-PBGA-B165 | R-PBGA-B165 | R-PBGA-B165 | R-PBGA-B165 |
JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
内存密度 | 18874368 bit | 18874368 bit | 18874368 bit | 18874368 bit | 18874368 bit | 18874368 bit | 18874368 bit | 18874368 bi | 18874368 bi |
内存集成电路类型 | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM |
内存宽度 | 18 | 18 | 18 | 18 | 18 | 18 | 18 | 36 | 36 |
湿度敏感等级 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
端子数量 | 165 | 165 | 165 | 165 | 165 | 165 | 165 | 165 | 165 |
字数 | 1048576 words | 1048576 words | 1048576 words | 1048576 words | 1048576 words | 1048576 words | 1048576 words | 524288 words | 524288 words |
字数代码 | 1000000 | 1000000 | 1000000 | 1000000 | 1000000 | 1000000 | 1000000 | 512000 | 512000 |
工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
组织 | 1MX18 | 1MX18 | 1MX18 | 1MX18 | 1MX18 | 1MX18 | 1MX18 | 512KX36 | 512KX36 |
输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装代码 | BGA | BGA | BGA | BGA | BGA | BGA | BGA | BGA | BGA |
封装等效代码 | BGA165,11X15,40 | BGA165,11X15,40 | BGA165,11X15,40 | BGA165,11X15,40 | BGA165,11X15,40 | BGA165,11X15,40 | BGA165,11X15,40 | BGA165,11X15,40 | BGA165,11X15,40 |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | GRID ARRAY | GRID ARRAY | GRID ARRAY | GRID ARRAY | GRID ARRAY | GRID ARRAY | GRID ARRAY | GRID ARRAY | GRID ARRAY |
并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
峰值回流温度(摄氏度) | 225 | 225 | 225 | 225 | 225 | 225 | 225 | 225 | 225 |
电源 | 1.5/1.8,1.8 V | 1.5/1.8,1.8 V | 1.5/1.8,1.8 V | 1.5/1.8,1.8 V | 1.5/1.8,1.8 V | 1.5/1.8,1.8 V | 1.5/1.8,1.8 V | 1.5/1.8,1.8 V | 1.5/1.8,1.8 V |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
最小待机电流 | 1.7 V | 1.7 V | 1.7 V | 1.7 V | 1.7 V | 1.7 V | 1.7 V | 1.7 V | 1.7 V |
表面贴装 | YES | YES | YES | YES | YES | YES | YES | YES | YES |
技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
端子面层 | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD |
端子形式 | BALL | BALL | BALL | BALL | BALL | BALL | BALL | BALL | BALL |
端子节距 | 1 mm | 1 mm | 1 mm | 1 mm | 1 mm | 1 mm | 1 mm | 1 mm | 1 mm |
端子位置 | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
处于峰值回流温度下的最长时间 | 20 | 20 | 20 | 20 | 20 | 20 | 20 | 20 | 20 |
Brand Name | - | - | - | - | Integrated Device Technology | Integrated Device Technology | Integrated Device Technology | Integrated Device Technology | Integrated Device Technology |
零件包装代码 | - | - | - | - | CABGA | CABGA | CABGA | CABGA | CABGA |
包装说明 | - | - | - | - | BGA, BGA165,11X15,40 | BGA, BGA165,11X15,40 | BGA, BGA165,11X15,40 | BGA, BGA165,11X15,40 | BGA, BGA165,11X15,40 |
针数 | - | - | - | - | 165 | 165 | 165 | 165 | 165 |
制造商包装代码 | - | - | - | - | BQ165 | BQ165 | BQ165 | BQ165 | BQ165 |
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