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JANTXVH2N7261U

产品描述Small Signal Field-Effect Transistor, 8A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LCC-15
产品类别分立半导体    晶体管   
文件大小304KB,共27页
制造商International Rectifier ( Infineon )
官网地址http://www.irf.com/
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JANTXVH2N7261U概述

Small Signal Field-Effect Transistor, 8A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LCC-15

JANTXVH2N7261U规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证不符合
厂商名称International Rectifier ( Infineon )
零件包装代码LCC
包装说明LCC-15
针数15
Reach Compliance Codeunknown
ECCN代码EAR99
配置SINGLE
最小漏源击穿电压100 V
最大漏极电流 (Abs) (ID)8 A
最大漏极电流 (ID)8 A
FET 技术METAL-OXIDE SEMICONDUCTOR
JESD-30 代码R-CQCC-N15
JESD-609代码e0
元件数量1
端子数量15
工作模式ENHANCEMENT MODE
最高工作温度150 °C
封装主体材料CERAMIC, METAL-SEALED COFIRED
封装形状RECTANGULAR
封装形式CHIP CARRIER
峰值回流温度(摄氏度)NOT SPECIFIED
极性/信道类型N-CHANNEL
最大功率耗散 (Abs)25 W
认证状态Not Qualified
参考标准MIL-19500/601E
表面贴装YES
端子面层Tin/Lead (Sn/Pb)
端子形式NO LEAD
端子位置QUAD
处于峰值回流温度下的最长时间NOT SPECIFIED
晶体管元件材料SILICON

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The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 17 July 2013.
INCH-POUND
MIL-PRF-19500/601K
17 April 2013
SUPERSEDING
MIL-PRF-19500/601J
14 March 2012
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, FIELD EFFECT POWER
TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7261 AND 2N7262 U AND U5 SUFFIXES, JANTXV,
AND RADIATION HARDENED TYPE SUFFIXES, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and
MIL-PRF-19500.
1. SCOPE
* 1.1 Scope. This specification covers the performance requirements for an N-channel, enhancement-mode,
MOSFET, radiation hardened and non-hardened, power transistors. Two levels of product assurance are provided
for each device type as specified in
MIL-PRF-19500,
with avalanche energy maximum rating (E
AS
) and maximum
avalanche current (I
AS
). See
6.5
for JANHC and JANKC die versions.
1.2 Physical dimensions. See
figure 1
(TO-205AF) and
figure 2
(LCC).
1.3 Maximum ratings. Unless otherwise specified, T
A
= +25°C.
Type
(1)
R
θJC
(3)
R
θJA
T
J
and
T
STG
*
P
T
(2)
P
T
T
C
= +25°C T
A
= +25°C
(free air)
W
W
0.71
0.71
V
DS
and
V
DG
V
GS
I
D1
I
D2
(4) (5)
(4) (5)
T
C
= +25°C T
C
= +100°C
I
S
I
DM
(6)
°C/W
5.0
5.0
°C/W
175
175
V dc
100
200
V dc
±20
±20
A dc
8.0
5.5
A dc
5.0
3.5
A dc
8.0
5.5
A(pk)
32
22
°C
-55 to +150
-55 to +150
2N7261
2N7262
25
25
(1) Unless otherwise specified, electrical characteristics, ratings, and conditions for “U” and “U5” suffix devices
(surface mount LCC) are identical to the corresponding non “U” and “U5” suffix devices.
(2) Derate linearly 0.2 W/°C for T
C
> +25°C.
(3) See
figure 3,
thermal impedance curves.
(4) The following formula derives the maximum theoretical I
D
limit. I
D
is limited by package and internal wires
and may be limited by pin diameter:
T
JM
- T
C
I
D
=
(
R
θ
JC
)
x
(
R
DS
( on ) at T
JM
)
(5) See
figure 4,
maximum drain current graph.
(6) I
DM
= 4 X I
D1
as calculated in note (4).
* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,
ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
Semiconductor@dla.mil.
Since contact
information can change, you may want to verify the currency of this address information using the ASSIST
Online database at
https://assist.dla.mil/.
AMSC N/A
FSC 5961

JANTXVH2N7261U相似产品对比

JANTXVH2N7261U JANTXVH2N7261 JANTXVH2N7262U
描述 Small Signal Field-Effect Transistor, 8A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LCC-15 Small Signal Field-Effect Transistor, 8A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, TO-205AF, 3 PIN Small Signal Field-Effect Transistor, 5.5A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LCC-15
是否无铅 含铅 含铅 含铅
零件包装代码 LCC BCY LCC
包装说明 LCC-15 CYLINDRICAL, O-MBCY-W3 CHIP CARRIER, R-CQCC-N15
针数 15 4 15
Reach Compliance Code unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99
配置 SINGLE SINGLE SINGLE
最小漏源击穿电压 100 V 100 V 200 V
最大漏极电流 (ID) 8 A 8 A 5.5 A
FET 技术 METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 代码 R-CQCC-N15 O-MBCY-W3 R-CQCC-N15
元件数量 1 1 1
端子数量 15 3 15
工作模式 ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
封装主体材料 CERAMIC, METAL-SEALED COFIRED METAL CERAMIC, METAL-SEALED COFIRED
封装形状 RECTANGULAR ROUND RECTANGULAR
封装形式 CHIP CARRIER CYLINDRICAL CHIP CARRIER
极性/信道类型 N-CHANNEL N-CHANNEL N-CHANNEL
认证状态 Not Qualified Not Qualified Not Qualified
参考标准 MIL-19500/601E MIL-19500/601E MIL-19500/601E
表面贴装 YES NO YES
端子形式 NO LEAD WIRE NO LEAD
端子位置 QUAD BOTTOM QUAD
晶体管元件材料 SILICON SILICON SILICON
是否Rohs认证 不符合 - 不符合
厂商名称 International Rectifier ( Infineon ) - International Rectifier ( Infineon )
最大漏极电流 (Abs) (ID) 8 A - 5.5 A
JESD-609代码 e0 - e0
最高工作温度 150 °C - 150 °C
峰值回流温度(摄氏度) NOT SPECIFIED - NOT SPECIFIED
最大功率耗散 (Abs) 25 W - 25 W
端子面层 Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb)
处于峰值回流温度下的最长时间 NOT SPECIFIED - NOT SPECIFIED

 
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