电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

JANTXVH2N7261

产品描述Small Signal Field-Effect Transistor, 8A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, TO-205AF, 3 PIN
产品类别分立半导体    晶体管   
文件大小304KB,共27页
制造商International Rectifier ( Infineon )
官网地址http://www.irf.com/
下载文档 详细参数 选型对比 全文预览

JANTXVH2N7261概述

Small Signal Field-Effect Transistor, 8A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, TO-205AF, 3 PIN

JANTXVH2N7261规格参数

参数名称属性值
是否无铅含铅
零件包装代码BCY
包装说明CYLINDRICAL, O-MBCY-W3
针数4
Reach Compliance Codeunknown
ECCN代码EAR99
外壳连接DRAIN
配置SINGLE
最小漏源击穿电压100 V
最大漏极电流 (ID)8 A
FET 技术METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码TO-205AF
JESD-30 代码O-MBCY-W3
元件数量1
端子数量3
工作模式ENHANCEMENT MODE
封装主体材料METAL
封装形状ROUND
封装形式CYLINDRICAL
极性/信道类型N-CHANNEL
认证状态Not Qualified
参考标准MIL-19500/601E
表面贴装NO
端子形式WIRE
端子位置BOTTOM
晶体管元件材料SILICON
Base Number Matches1

文档预览

下载PDF文档
The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 17 July 2013.
INCH-POUND
MIL-PRF-19500/601K
17 April 2013
SUPERSEDING
MIL-PRF-19500/601J
14 March 2012
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, FIELD EFFECT POWER
TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7261 AND 2N7262 U AND U5 SUFFIXES, JANTXV,
AND RADIATION HARDENED TYPE SUFFIXES, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and
MIL-PRF-19500.
1. SCOPE
* 1.1 Scope. This specification covers the performance requirements for an N-channel, enhancement-mode,
MOSFET, radiation hardened and non-hardened, power transistors. Two levels of product assurance are provided
for each device type as specified in
MIL-PRF-19500,
with avalanche energy maximum rating (E
AS
) and maximum
avalanche current (I
AS
). See
6.5
for JANHC and JANKC die versions.
1.2 Physical dimensions. See
figure 1
(TO-205AF) and
figure 2
(LCC).
1.3 Maximum ratings. Unless otherwise specified, T
A
= +25°C.
Type
(1)
R
θJC
(3)
R
θJA
T
J
and
T
STG
*
P
T
(2)
P
T
T
C
= +25°C T
A
= +25°C
(free air)
W
W
0.71
0.71
V
DS
and
V
DG
V
GS
I
D1
I
D2
(4) (5)
(4) (5)
T
C
= +25°C T
C
= +100°C
I
S
I
DM
(6)
°C/W
5.0
5.0
°C/W
175
175
V dc
100
200
V dc
±20
±20
A dc
8.0
5.5
A dc
5.0
3.5
A dc
8.0
5.5
A(pk)
32
22
°C
-55 to +150
-55 to +150
2N7261
2N7262
25
25
(1) Unless otherwise specified, electrical characteristics, ratings, and conditions for “U” and “U5” suffix devices
(surface mount LCC) are identical to the corresponding non “U” and “U5” suffix devices.
(2) Derate linearly 0.2 W/°C for T
C
> +25°C.
(3) See
figure 3,
thermal impedance curves.
(4) The following formula derives the maximum theoretical I
D
limit. I
D
is limited by package and internal wires
and may be limited by pin diameter:
T
JM
- T
C
I
D
=
(
R
θ
JC
)
x
(
R
DS
( on ) at T
JM
)
(5) See
figure 4,
maximum drain current graph.
(6) I
DM
= 4 X I
D1
as calculated in note (4).
* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,
ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
Semiconductor@dla.mil.
Since contact
information can change, you may want to verify the currency of this address information using the ASSIST
Online database at
https://assist.dla.mil/.
AMSC N/A
FSC 5961

JANTXVH2N7261相似产品对比

JANTXVH2N7261 JANTXVH2N7262U JANTXVH2N7261U
描述 Small Signal Field-Effect Transistor, 8A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, TO-205AF, 3 PIN Small Signal Field-Effect Transistor, 5.5A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LCC-15 Small Signal Field-Effect Transistor, 8A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LCC-15
是否无铅 含铅 含铅 含铅
零件包装代码 BCY LCC LCC
包装说明 CYLINDRICAL, O-MBCY-W3 CHIP CARRIER, R-CQCC-N15 LCC-15
针数 4 15 15
Reach Compliance Code unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99
配置 SINGLE SINGLE SINGLE
最小漏源击穿电压 100 V 200 V 100 V
最大漏极电流 (ID) 8 A 5.5 A 8 A
FET 技术 METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 代码 O-MBCY-W3 R-CQCC-N15 R-CQCC-N15
元件数量 1 1 1
端子数量 3 15 15
工作模式 ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
封装主体材料 METAL CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
封装形状 ROUND RECTANGULAR RECTANGULAR
封装形式 CYLINDRICAL CHIP CARRIER CHIP CARRIER
极性/信道类型 N-CHANNEL N-CHANNEL N-CHANNEL
认证状态 Not Qualified Not Qualified Not Qualified
参考标准 MIL-19500/601E MIL-19500/601E MIL-19500/601E
表面贴装 NO YES YES
端子形式 WIRE NO LEAD NO LEAD
端子位置 BOTTOM QUAD QUAD
晶体管元件材料 SILICON SILICON SILICON
是否Rohs认证 - 不符合 不符合
厂商名称 - International Rectifier ( Infineon ) International Rectifier ( Infineon )
最大漏极电流 (Abs) (ID) - 5.5 A 8 A
JESD-609代码 - e0 e0
最高工作温度 - 150 °C 150 °C
峰值回流温度(摄氏度) - NOT SPECIFIED NOT SPECIFIED
最大功率耗散 (Abs) - 25 W 25 W
端子面层 - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
处于峰值回流温度下的最长时间 - NOT SPECIFIED NOT SPECIFIED

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 1916  338  787  1470  789  52  59  39  32  13 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved