Standard SRAM, 16KX4, 55ns, CMOS, CDIP22, 0.300 INCH, CERDIP-22
| 参数名称 | 属性值 |
| 是否无铅 | 含铅 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | Pyramid Semiconductor Corporation |
| 零件包装代码 | DIP |
| 包装说明 | DIP, |
| 针数 | 22 |
| Reach Compliance Code | compliant |
| ECCN代码 | 3A001.A.2.C |
| 最长访问时间 | 55 ns |
| JESD-30 代码 | R-GDIP-T22 |
| JESD-609代码 | e0 |
| 长度 | 27.559 mm |
| 内存密度 | 65536 bit |
| 内存集成电路类型 | STANDARD SRAM |
| 内存宽度 | 4 |
| 功能数量 | 1 |
| 端子数量 | 22 |
| 字数 | 16384 words |
| 字数代码 | 16000 |
| 工作模式 | ASYNCHRONOUS |
| 最高工作温度 | 125 °C |
| 最低工作温度 | -55 °C |
| 组织 | 16KX4 |
| 封装主体材料 | CERAMIC, GLASS-SEALED |
| 封装代码 | DIP |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 并行/串行 | PARALLEL |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 认证状态 | Not Qualified |
| 座面最大高度 | 5.08 mm |
| 最大供电电压 (Vsup) | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | NO |
| 技术 | CMOS |
| 温度等级 | MILITARY |
| 端子面层 | TIN LEAD |
| 端子形式 | THROUGH-HOLE |
| 端子节距 | 2.54 mm |
| 端子位置 | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 宽度 | 7.62 mm |
| P4C188L-55DM | 5962-8685924ZA | P4C188-55LM | 5962-8685923ZA | P4C188-55DM | P4C188L-55DMB | P4C188L-55LM | P4C188L-55LMB | |
|---|---|---|---|---|---|---|---|---|
| 描述 | Standard SRAM, 16KX4, 55ns, CMOS, CDIP22, 0.300 INCH, CERDIP-22 | SRAM, 16KX4, 35ns, CMOS, CQCC22, LCC-22 | Standard SRAM, 16KX4, 55ns, CMOS, CQCC22, 0.290 X 0.490 INCH, HERMETIC SEALED, CERAMIC, LCC-22 | SRAM, 16KX4, 35ns, CMOS, CQCC22, LCC-22 | Standard SRAM, 16KX4, 55ns, CMOS, CDIP22, 0.300 INCH, CERDIP-22 | Standard SRAM, 16KX4, 55ns, CMOS, CDIP22, 0.300 INCH, CERDIP-22 | Standard SRAM, 16KX4, 55ns, CMOS, CQCC22, 0.290 X 0.490 INCH, HERMETIC SEALED, CERAMIC, LCC-22 | Standard SRAM, 16KX4, 55ns, CMOS, CQCC22, 0.290 X 0.490 INCH, HERMETIC SEALED, CERAMIC, LCC-22 |
| 是否无铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| 零件包装代码 | DIP | LCC | LCC | LCC | DIP | DIP | LCC | LCC |
| 包装说明 | DIP, | QCCN, LCC22,.3X.5 | QCCN, | QCCN, LCC22,.3X.5 | DIP, | DIP, | QCCN, | QCCN, |
| 针数 | 22 | 22 | 22 | 22 | 22 | 22 | 22 | 22 |
| Reach Compliance Code | compliant | compliant | compliant | compliant | compliant | compliant | compliant | compliant |
| ECCN代码 | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C |
| 最长访问时间 | 55 ns | 35 ns | 55 ns | 35 ns | 55 ns | 55 ns | 55 ns | 55 ns |
| JESD-30 代码 | R-GDIP-T22 | R-CQCC-N22 | R-CQCC-N22 | R-CQCC-N22 | R-GDIP-T22 | R-GDIP-T22 | R-CQCC-N22 | R-CQCC-N22 |
| 长度 | 27.559 mm | 12.445 mm | 12.446 mm | 12.445 mm | 27.559 mm | 27.559 mm | 12.446 mm | 12.446 mm |
| 内存密度 | 65536 bit | 65536 bit | 65536 bit | 65536 bit | 65536 bit | 65536 bit | 65536 bit | 65536 bit |
| 内存集成电路类型 | STANDARD SRAM | OTHER SRAM | STANDARD SRAM | OTHER SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM |
| 内存宽度 | 4 | 4 | 4 | 4 | 4 | 4 | 4 | 4 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 22 | 22 | 22 | 22 | 22 | 22 | 22 | 22 |
| 字数 | 16384 words | 16384 words | 16384 words | 16384 words | 16384 words | 16384 words | 16384 words | 16384 words |
| 字数代码 | 16000 | 16000 | 16000 | 16000 | 16000 | 16000 | 16000 | 16000 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C |
| 最低工作温度 | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C |
| 组织 | 16KX4 | 16KX4 | 16KX4 | 16KX4 | 16KX4 | 16KX4 | 16KX4 | 16KX4 |
| 封装主体材料 | CERAMIC, GLASS-SEALED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
| 封装代码 | DIP | QCCN | QCCN | QCCN | DIP | DIP | QCCN | QCCN |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER | IN-LINE | IN-LINE | CHIP CARRIER | CHIP CARRIER |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 认证状态 | Not Qualified | Qualified | Not Qualified | Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 座面最大高度 | 5.08 mm | 2.03 mm | 1.905 mm | 2.03 mm | 5.08 mm | 5.08 mm | 1.905 mm | 1.905 mm |
| 最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | NO | YES | YES | YES | NO | NO | YES | YES |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY |
| 端子形式 | THROUGH-HOLE | NO LEAD | NO LEAD | NO LEAD | THROUGH-HOLE | THROUGH-HOLE | NO LEAD | NO LEAD |
| 端子节距 | 2.54 mm | 1.27 mm | 1.27 mm | 1.27 mm | 2.54 mm | 2.54 mm | 1.27 mm | 1.27 mm |
| 端子位置 | DUAL | QUAD | QUAD | QUAD | DUAL | DUAL | QUAD | QUAD |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 宽度 | 7.62 mm | 7.366 mm | 7.366 mm | 7.366 mm | 7.62 mm | 7.62 mm | 7.366 mm | 7.366 mm |
| 厂商名称 | Pyramid Semiconductor Corporation | Pyramid Semiconductor Corporation | - | Pyramid Semiconductor Corporation | Pyramid Semiconductor Corporation | Pyramid Semiconductor Corporation | Pyramid Semiconductor Corporation | Pyramid Semiconductor Corporation |
| JESD-609代码 | e0 | - | e0 | - | e0 | e0 | e0 | e0 |
| 端子面层 | TIN LEAD | - | TIN LEAD | - | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD |
模拟电子
模拟电子
传感器
ARM技术
FPGA/CPLD
FPGA/CPLD
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