SRAM, 16KX4, 35ns, CMOS, CQCC22, LCC-22
参数名称 | 属性值 |
是否无铅 | 含铅 |
是否Rohs认证 | 不符合 |
厂商名称 | Pyramid Semiconductor Corporation |
零件包装代码 | LCC |
包装说明 | QCCN, LCC22,.3X.5 |
针数 | 22 |
Reach Compliance Code | compliant |
ECCN代码 | 3A001.A.2.C |
最长访问时间 | 35 ns |
I/O 类型 | COMMON |
JESD-30 代码 | R-CQCC-N22 |
长度 | 12.445 mm |
内存密度 | 65536 bit |
内存集成电路类型 | OTHER SRAM |
内存宽度 | 4 |
功能数量 | 1 |
端子数量 | 22 |
字数 | 16384 words |
字数代码 | 16000 |
工作模式 | ASYNCHRONOUS |
最高工作温度 | 125 °C |
最低工作温度 | -55 °C |
组织 | 16KX4 |
输出特性 | 3-STATE |
封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
封装代码 | QCCN |
封装等效代码 | LCC22,.3X.5 |
封装形状 | RECTANGULAR |
封装形式 | CHIP CARRIER |
并行/串行 | PARALLEL |
峰值回流温度(摄氏度) | NOT SPECIFIED |
电源 | 5 V |
认证状态 | Qualified |
筛选级别 | MIL-STD-883 |
座面最大高度 | 2.03 mm |
最大待机电流 | 0.025 A |
最小待机电流 | 4.5 V |
最大压摆率 | 0.115 mA |
最大供电电压 (Vsup) | 5.5 V |
最小供电电压 (Vsup) | 4.5 V |
标称供电电压 (Vsup) | 5 V |
表面贴装 | YES |
技术 | CMOS |
温度等级 | MILITARY |
端子形式 | NO LEAD |
端子节距 | 1.27 mm |
端子位置 | QUAD |
处于峰值回流温度下的最长时间 | NOT SPECIFIED |
宽度 | 7.366 mm |
Base Number Matches | 1 |
5962-8685924ZA | P4C188-55LM | 5962-8685923ZA | P4C188-55DM | P4C188L-55DM | P4C188L-55DMB | P4C188L-55LM | P4C188L-55LMB | |
---|---|---|---|---|---|---|---|---|
描述 | SRAM, 16KX4, 35ns, CMOS, CQCC22, LCC-22 | Standard SRAM, 16KX4, 55ns, CMOS, CQCC22, 0.290 X 0.490 INCH, HERMETIC SEALED, CERAMIC, LCC-22 | SRAM, 16KX4, 35ns, CMOS, CQCC22, LCC-22 | Standard SRAM, 16KX4, 55ns, CMOS, CDIP22, 0.300 INCH, CERDIP-22 | Standard SRAM, 16KX4, 55ns, CMOS, CDIP22, 0.300 INCH, CERDIP-22 | Standard SRAM, 16KX4, 55ns, CMOS, CDIP22, 0.300 INCH, CERDIP-22 | Standard SRAM, 16KX4, 55ns, CMOS, CQCC22, 0.290 X 0.490 INCH, HERMETIC SEALED, CERAMIC, LCC-22 | Standard SRAM, 16KX4, 55ns, CMOS, CQCC22, 0.290 X 0.490 INCH, HERMETIC SEALED, CERAMIC, LCC-22 |
是否无铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 |
是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
零件包装代码 | LCC | LCC | LCC | DIP | DIP | DIP | LCC | LCC |
包装说明 | QCCN, LCC22,.3X.5 | QCCN, | QCCN, LCC22,.3X.5 | DIP, | DIP, | DIP, | QCCN, | QCCN, |
针数 | 22 | 22 | 22 | 22 | 22 | 22 | 22 | 22 |
Reach Compliance Code | compliant | compliant | compliant | compliant | compliant | compliant | compliant | compliant |
ECCN代码 | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C |
最长访问时间 | 35 ns | 55 ns | 35 ns | 55 ns | 55 ns | 55 ns | 55 ns | 55 ns |
JESD-30 代码 | R-CQCC-N22 | R-CQCC-N22 | R-CQCC-N22 | R-GDIP-T22 | R-GDIP-T22 | R-GDIP-T22 | R-CQCC-N22 | R-CQCC-N22 |
长度 | 12.445 mm | 12.446 mm | 12.445 mm | 27.559 mm | 27.559 mm | 27.559 mm | 12.446 mm | 12.446 mm |
内存密度 | 65536 bit | 65536 bit | 65536 bit | 65536 bit | 65536 bit | 65536 bit | 65536 bit | 65536 bit |
内存集成电路类型 | OTHER SRAM | STANDARD SRAM | OTHER SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM |
内存宽度 | 4 | 4 | 4 | 4 | 4 | 4 | 4 | 4 |
功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 22 | 22 | 22 | 22 | 22 | 22 | 22 | 22 |
字数 | 16384 words | 16384 words | 16384 words | 16384 words | 16384 words | 16384 words | 16384 words | 16384 words |
字数代码 | 16000 | 16000 | 16000 | 16000 | 16000 | 16000 | 16000 | 16000 |
工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
最高工作温度 | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C |
最低工作温度 | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C |
组织 | 16KX4 | 16KX4 | 16KX4 | 16KX4 | 16KX4 | 16KX4 | 16KX4 | 16KX4 |
封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
封装代码 | QCCN | QCCN | QCCN | DIP | DIP | DIP | QCCN | QCCN |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER | IN-LINE | IN-LINE | IN-LINE | CHIP CARRIER | CHIP CARRIER |
并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
峰值回流温度(摄氏度) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
认证状态 | Qualified | Not Qualified | Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
座面最大高度 | 2.03 mm | 1.905 mm | 2.03 mm | 5.08 mm | 5.08 mm | 5.08 mm | 1.905 mm | 1.905 mm |
最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
表面贴装 | YES | YES | YES | NO | NO | NO | YES | YES |
技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
温度等级 | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY |
端子形式 | NO LEAD | NO LEAD | NO LEAD | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | NO LEAD | NO LEAD |
端子节距 | 1.27 mm | 1.27 mm | 1.27 mm | 2.54 mm | 2.54 mm | 2.54 mm | 1.27 mm | 1.27 mm |
端子位置 | QUAD | QUAD | QUAD | DUAL | DUAL | DUAL | QUAD | QUAD |
处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
宽度 | 7.366 mm | 7.366 mm | 7.366 mm | 7.62 mm | 7.62 mm | 7.62 mm | 7.366 mm | 7.366 mm |
厂商名称 | Pyramid Semiconductor Corporation | - | Pyramid Semiconductor Corporation | Pyramid Semiconductor Corporation | Pyramid Semiconductor Corporation | Pyramid Semiconductor Corporation | Pyramid Semiconductor Corporation | Pyramid Semiconductor Corporation |
JESD-609代码 | - | e0 | - | e0 | e0 | e0 | e0 | e0 |
端子面层 | - | TIN LEAD | - | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD |
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