SRAM Module, 16KX16, 40ns, CMOS, CDIP40
| 参数名称 | 属性值 |
| 是否无铅 | 含铅 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | IDT (Integrated Device Technology) |
| Reach Compliance Code | not_compliant |
| 最长访问时间 | 40 ns |
| I/O 类型 | COMMON |
| JESD-30 代码 | R-XDIP-T40 |
| JESD-609代码 | e0 |
| 内存密度 | 262144 bit |
| 内存集成电路类型 | SRAM MODULE |
| 内存宽度 | 16 |
| 端子数量 | 40 |
| 字数 | 16384 words |
| 字数代码 | 16000 |
| 工作模式 | ASYNCHRONOUS |
| 最高工作温度 | 70 °C |
| 最低工作温度 | |
| 组织 | 16KX16 |
| 输出特性 | 3-STATE |
| 封装主体材料 | CERAMIC |
| 封装代码 | DIP |
| 封装等效代码 | DIP40,.6 |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 并行/串行 | PARALLEL |
| 峰值回流温度（摄氏度） | 225 |
| 电源 | 5 V |
| 认证状态 | Not Qualified |
| 最大待机电流 | 0.06 A |
| 最小待机电流 | 4.5 V |
| 最大压摆率 | 0.36 mA |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | NO |
| 技术 | CMOS |
| 温度等级 | COMMERCIAL |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE |
| 端子节距 | 2.54 mm |
| 端子位置 | DUAL |
| 处于峰值回流温度下的最长时间 | 30 |
| IDT8M656S40C | IDT8M656S50C | IDT8M656S50CB | IDT8M656S60CB | IDT8M656S70C | IDT8M656S70CB | IDT8M656S85C | IDT8M656S85CB | |
|---|---|---|---|---|---|---|---|---|
| 描述 | SRAM Module, 16KX16, 40ns, CMOS, CDIP40 | SRAM Module, 16KX16, 50ns, CMOS, CDIP40 | SRAM Module, 16KX16, 50ns, CMOS, CDIP40 | SRAM Module, 16KX16, 60ns, CMOS, CDIP40 | SRAM Module, 16KX16, 70ns, CMOS, CDIP40 | SRAM Module, 16KX16, 70ns, CMOS, CDIP40 | SRAM Module, 16KX16, 85ns, CMOS, CDIP40 | SRAM Module, 16KX16, 85ns, CMOS, CDIP40 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| 厂商名称 | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) |
| Reach Compliance Code | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant |
| 最长访问时间 | 40 ns | 50 ns | 50 ns | 60 ns | 70 ns | 70 ns | 85 ns | 85 ns |
| I/O 类型 | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
| JESD-30 代码 | R-XDIP-T40 | R-XDIP-T40 | R-XDIP-T40 | R-XDIP-T40 | R-XDIP-T40 | R-XDIP-T40 | R-XDIP-T40 | R-XDIP-T40 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
| 内存密度 | 262144 bit | 262144 bit | 262144 bit | 262144 bit | 262144 bit | 262144 bit | 262144 bit | 262144 bit |
| 内存集成电路类型 | SRAM MODULE | SRAM MODULE | SRAM MODULE | SRAM MODULE | SRAM MODULE | SRAM MODULE | SRAM MODULE | SRAM MODULE |
| 内存宽度 | 16 | 16 | 16 | 16 | 16 | 16 | 16 | 16 |
| 端子数量 | 40 | 40 | 40 | 40 | 40 | 40 | 40 | 40 |
| 字数 | 16384 words | 16384 words | 16384 words | 16384 words | 16384 words | 16384 words | 16384 words | 16384 words |
| 字数代码 | 16000 | 16000 | 16000 | 16000 | 16000 | 16000 | 16000 | 16000 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 70 °C | 70 °C | 125 °C | 125 °C | 70 °C | 125 °C | 70 °C | 125 °C |
| 组织 | 16KX16 | 16KX16 | 16KX16 | 16KX16 | 16KX16 | 16KX16 | 16KX16 | 16KX16 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 封装主体材料 | CERAMIC | CERAMIC | CERAMIC | CERAMIC | CERAMIC | CERAMIC | CERAMIC | CERAMIC |
| 封装代码 | DIP | DIP | DIP | DIP | DIP | DIP | DIP | DIP |
| 封装等效代码 | DIP40,.6 | DIP40,.6 | DIP40,.6 | DIP40,.6 | DIP40,.6 | DIP40,.6 | DIP40,.6 | DIP40,.6 |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| 峰值回流温度（摄氏度） | 225 | 225 | 225 | 225 | 225 | 260 | 225 | 260 |
| 电源 | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 最大待机电流 | 0.06 A | 0.06 A | 0.08 A | 0.08 A | 0.06 A | 0.08 A | 0.06 A | 0.08 A |
| 最小待机电流 | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| 最大压摆率 | 0.36 mA | 0.33 mA | 0.36 mA | 0.36 mA | 0.36 mA | 0.36 mA | 0.36 mA | 0.36 mA |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | NO | NO | NO | NO | NO | NO | NO | NO |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | COMMERCIAL | COMMERCIAL | MILITARY | MILITARY | COMMERCIAL | MILITARY | COMMERCIAL | MILITARY |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| 端子节距 | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
| 处于峰值回流温度下的最长时间 | 30 | 30 | 30 | 30 | 30 | 6 | 30 | 6 |
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