Cache Tag SRAM Module, 64KX36, 25ns, PSMA80
| 参数名称 | 属性值 |
| 是否无铅 | 含铅 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | IDT (Integrated Device Technology) |
| Reach Compliance Code | not_compliant |
| 最长访问时间 | 25 ns |
| I/O 类型 | COMMON |
| JESD-30 代码 | R-PSMA-N80 |
| JESD-609代码 | e0 |
| 内存密度 | 2359296 bit |
| 内存集成电路类型 | CACHE TAG SRAM MODULE |
| 内存宽度 | 36 |
| 端子数量 | 80 |
| 字数 | 65536 words |
| 字数代码 | 64000 |
| 工作模式 | ASYNCHRONOUS |
| 最高工作温度 | 70 °C |
| 最低工作温度 | |
| 组织 | 64KX36 |
| 输出特性 | 3-STATE |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装代码 | SIMM |
| 封装等效代码 | SSIM80 |
| 封装形状 | RECTANGULAR |
| 封装形式 | MICROELECTRONIC ASSEMBLY |
| 并行/串行 | PARALLEL |
| 峰值回流温度(摄氏度) | 225 |
| 电源 | 5 V |
| 认证状态 | Not Qualified |
| 最大压摆率 | 2.2 mA |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | NO |
| 温度等级 | COMMERCIAL |
| 端子面层 | TIN LEAD |
| 端子形式 | NO LEAD |
| 端子节距 | 1.27 mm |
| 端子位置 | SINGLE |
| 处于峰值回流温度下的最长时间 | 30 |
| IDT7MP6084S50M | IDT7MP6074S50M | IDT7MP6074S75M | IDT7MP6084S75M | IDT7MP6094S50M | IDT7MP6094S75M | |
|---|---|---|---|---|---|---|
| 描述 | Cache Tag SRAM Module, 64KX36, 25ns, PSMA80 | Cache Tag SRAM Module, 16KX36, 25ns, PSMA80 | Cache Tag SRAM Module, 16KX36, 15ns, PSMA80 | Cache Tag SRAM Module, 64KX36, 15ns, PSMA80 | Cache Tag SRAM Module, 256KX36, 25ns, PSMA80 | Cache Tag SRAM Module, 256KX36, 15ns, PSMA80 |
| 是否无铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| 厂商名称 | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) |
| Reach Compliance Code | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant |
| 最长访问时间 | 25 ns | 25 ns | 15 ns | 15 ns | 25 ns | 15 ns |
| I/O 类型 | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
| JESD-30 代码 | R-PSMA-N80 | R-PSMA-N80 | R-PSMA-N80 | R-PSMA-N80 | R-PSMA-N80 | R-PSMA-N80 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 |
| 内存密度 | 2359296 bit | 589824 bit | 589824 bit | 2359296 bit | 9437184 bit | 9437184 bit |
| 内存集成电路类型 | CACHE TAG SRAM MODULE | CACHE TAG SRAM MODULE | CACHE TAG SRAM MODULE | CACHE TAG SRAM MODULE | CACHE TAG SRAM MODULE | CACHE TAG SRAM MODULE |
| 内存宽度 | 36 | 36 | 36 | 36 | 36 | 36 |
| 端子数量 | 80 | 80 | 80 | 80 | 80 | 80 |
| 字数 | 65536 words | 16384 words | 16384 words | 65536 words | 262144 words | 262144 words |
| 字数代码 | 64000 | 16000 | 16000 | 64000 | 256000 | 256000 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C |
| 组织 | 64KX36 | 16KX36 | 16KX36 | 64KX36 | 256KX36 | 256KX36 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | SIMM | SIMM | SIMM | SIMM | SIMM | SIMM |
| 封装等效代码 | SSIM80 | SSIM80 | SSIM80 | SSIM80 | SSIM80 | SSIM80 |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| 峰值回流温度(摄氏度) | 225 | 225 | 225 | 225 | 225 | 225 |
| 电源 | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | NO | NO | NO | NO | NO | NO |
| 温度等级 | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
| 端子面层 | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD |
| 端子形式 | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD |
| 端子节距 | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm |
| 端子位置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| 处于峰值回流温度下的最长时间 | 30 | 30 | 30 | 30 | 30 | 30 |
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