Small Signal Field-Effect Transistor, 0.3A I(D), 50V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PICOMINI-6
| 参数名称 | 属性值 |
| 是否Rohs认证 | 符合 |
| 厂商名称 | Central Semiconductor |
| 包装说明 | SMALL OUTLINE, R-PDSO-F6 |
| 针数 | 6 |
| Reach Compliance Code | compliant |
| ECCN代码 | EAR99 |
| 配置 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 50 V |
| 最大漏极电流 (Abs) (ID) | 0.28 A |
| 最大漏极电流 (ID) | 0.3 A |
| 最大漏源导通电阻 | 3 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| 最大反馈电容 (Crss) | 5 pF |
| JESD-30 代码 | R-PDSO-F6 |
| JESD-609代码 | e3 |
| 湿度敏感等级 | 1 |
| 元件数量 | 2 |
| 端子数量 | 6 |
| 工作模式 | ENHANCEMENT MODE |
| 最高工作温度 | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 峰值回流温度(摄氏度) | 260 |
| 极性/信道类型 | N-CHANNEL |
| 最大功率耗散 (Abs) | 0.35 W |
| 认证状态 | Not Qualified |
| 表面贴装 | YES |
| 端子面层 | Matte Tin (Sn) |
| 端子形式 | FLAT |
| 端子位置 | DUAL |
| 处于峰值回流温度下的最长时间 | 10 |
| 晶体管应用 | AMPLIFIER |
| 晶体管元件材料 | SILICON |

| CMLDM7003BK | CMLDM7003GTR | CMLDM7003JTR | CMLDM7003TR | CMLDM7003GBK | CMLDM7003JBK | |
|---|---|---|---|---|---|---|
| 描述 | Small Signal Field-Effect Transistor, 0.3A I(D), 50V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PICOMINI-6 | Small Signal Field-Effect Transistor, 0.28A I(D), 50V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PICOMINI-6 | Small Signal Field-Effect Transistor, 0.3A I(D), 50V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3 | Small Signal Field-Effect Transistor, 0.3A I(D), 50V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PICOMINI-6 | Small Signal Field-Effect Transistor, 0.28A I(D), 50V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PICOMINI-6 | Small Signal Field-Effect Transistor, 0.3A I(D), 50V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3 |
| 是否Rohs认证 | 符合 | 符合 | 符合 | 符合 | 符合 | 符合 |
| 包装说明 | SMALL OUTLINE, R-PDSO-F6 | SMALL OUTLINE, R-PDSO-F6 | SMALL OUTLINE, R-PDSO-F6 | SMALL OUTLINE, R-PDSO-F6 | SMALL OUTLINE, R-PDSO-F6 | SMALL OUTLINE, R-PDSO-F6 |
| 针数 | 6 | 6 | 3 | 6 | 6 | 3 |
| Reach Compliance Code | compliant | compliant | compliant | compliant | compliant | compliant |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 配置 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 50 V | 50 V | 50 V | 50 V | 50 V | 50 V |
| 最大漏极电流 (Abs) (ID) | 0.28 A | 0.28 A | 0.28 A | 0.28 A | 0.28 A | 0.28 A |
| 最大漏极电流 (ID) | 0.3 A | 0.28 A | 0.3 A | 0.3 A | 0.28 A | 0.3 A |
| 最大漏源导通电阻 | 3 Ω | 3 Ω | 2.3 Ω | 3 Ω | 3 Ω | 2.3 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | R-PDSO-F6 | R-PDSO-F6 | R-PDSO-F6 | R-PDSO-F6 | R-PDSO-F6 | R-PDSO-F6 |
| JESD-609代码 | e3 | e3 | e3 | e3 | e3 | e3 |
| 湿度敏感等级 | 1 | 1 | 1 | 1 | 1 | 1 |
| 元件数量 | 2 | 2 | 2 | 2 | 2 | 2 |
| 端子数量 | 6 | 6 | 6 | 6 | 6 | 6 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| 峰值回流温度(摄氏度) | 260 | 260 | 260 | 260 | 260 | 260 |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 最大功率耗散 (Abs) | 0.35 W | 0.35 W | 0.35 W | 0.35 W | 0.35 W | 0.35 W |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | YES | YES | YES | YES | YES | YES |
| 端子面层 | Matte Tin (Sn) | Matte Tin (Sn) | Matte Tin (Sn) | Matte Tin (Sn) | Matte Tin (Sn) | Matte Tin (Sn) |
| 端子形式 | FLAT | FLAT | FLAT | FLAT | FLAT | FLAT |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
| 处于峰值回流温度下的最长时间 | 10 | 10 | 10 | 10 | 10 | 10 |
| 晶体管应用 | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| 厂商名称 | Central Semiconductor | - | Central Semiconductor | Central Semiconductor | Central Semiconductor | Central Semiconductor |
| 最大反馈电容 (Crss) | 5 pF | 5 pF | - | 5 pF | 5 pF | - |
电子工程世界版权所有
京B2-20211791
京ICP备10001474号-1
电信业务审批[2006]字第258号函
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved