Datasheet> 器件分类 > 分立半导体> 晶体管> CMUDM8004TR

CMUDM8004TR: 产品描述Small Signal Field-Effect Transistor, 0.45A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-523, 3 PIN; 产品类别分立半导体晶体管; 文件大小392KB，共2页; 制造商Central Semiconductor

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CMUDM8004TR概述

Small Signal Field-Effect Transistor, 0.45A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-523, 3 PIN

CMUDM8004TR规格参数

参数名称	属性值
是否Rohs认证	不符合
厂商名称	Central Semiconductor
零件包装代码	SOT
包装说明	SOT-523, 3 PIN
针数	3
Reach Compliance Code	unknown
ECCN代码	EAR99
其他特性	LOGIC LEVEL COMPATIBLE, LOW THRESHOLD
配置	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	30 V
最大漏极电流 (Abs) (ID)	0.45 A
最大漏极电流 (ID)	0.45 A
最大漏源导通电阻	1.1 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)	10 pF
JESD-30 代码	R-PDSO-F3
元件数量	1
端子数量	3
工作模式	ENHANCEMENT MODE
最高工作温度	150 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
极性/信道类型	P-CHANNEL
最大功率耗散 (Abs)	0.25 W
认证状态	Not Qualified
表面贴装	YES
端子形式	FLAT
端子位置	DUAL
晶体管应用	SWITCHING
晶体管元件材料	SILICON

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CMUDM7004

SURFACE MOUNT

N-CHANNEL

ENHANCEMENT-MODE

SILICON MOSFET

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMUDM7004

is an Enhancement-mode N-Channel MOSFET,

manufactured by the N-Channel DMOS Process,

designed for high speed pulsed amplifier and driver

applications. This MOSFET offers Low rDS(on) and

Low Theshold Voltage.

MARKING CODE: 74C

SOT-523 CASE

APPLICATIONS:

• Load/Power Switches

• Power Supply Converter Circuits

• Battery Powered Portable Devices

MAXIMUM RATING:

(TA=25°C)

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Power Dissipation

Operating and Storage Junction Temperature

FEATURES:

• ESD Protection up to 2kV

• Low rDS(on)

• Low Threshold Voltage

• Logic Level Compatible

• Small, SOT-523 Surface Mount Package

• Complimentary P-Channel MOSFET: CMUDM8004

SYMBOL

VDS

VGS

TJ, Tstg

UNITS

°C

MAX

3.0

1.0

0.5

280

390

ID=1.0A

200

5.0

8.0

550

0.792

0.15

0.23

1.0

1.1

460

560

730

UNITS

μA

mΩ

8.0

450

250

-65 to +150

ELECTRICAL CHARACTERISTICS:

(TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

IGSSF, IGSSR VGS=8.0V, VDS=0

IDSS

BVDSS

VGS(th)

VSD

rDS(ON)

Qg(tot)

Qgs

Qgd

gFS

Crss

Ciss

Coss

ton

toff

VDS=30V, VGS=0

VGS=0, ID=10μA

VDS=VGS, ID=250μA

VGS=0, IS=400mA

VGS=4.5V, ID=200mA

VGS=2.5V, ID=100mA

VGS=1.8V, ID=75mA

VDS=15V, VGS=4.5V,

VDS=15V,

VDS=10V,

VDS=25V,

VGS=4.5V, ID=1.0A

ID=100mA

VGS=0, f=1.0MHz

VDS=25V, VGS=0, f=1.0MHz

VDS=5.0V, VGS=4.0V, ID=75mA, RG=10Ω

R2 (2-August 2011)

CMUDM8004TR相似产品对比

	CMUDM8004TR	CMUDM7004TRLEADFREE	CMUDM7004BKLEADFREE	CMUDM7004BK	CMUDM7004TR
描述	Small Signal Field-Effect Transistor, 0.45A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-523, 3 PIN	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET	Small Signal Field-Effect Transistor, 0.45A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-523, 3 PIN
是否Rohs认证	不符合	符合	符合	不符合	不符合
Reach Compliance Code	unknown	compliant	compliant	unknown	not_compliant
配置	SINGLE WITH BUILT-IN DIODE	Single	Single	Single	SINGLE WITH BUILT-IN DIODE
最大漏极电流 (Abs) (ID)	0.45 A	0.45 A	0.45 A	0.45 A	0.45 A
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
最高工作温度	150 °C	150 °C	150 °C	150 °C	150 °C
极性/信道类型	P-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
最大功率耗散 (Abs)	0.25 W	0.25 W	0.25 W	0.25 W	0.25 W
表面贴装	YES	YES	YES	YES	YES
Base Number Matches	-	1	1	1	-

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