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MD59-0039TR

产品描述TELECOM, CELLULAR, RF AND BASEBAND CIRCUIT, PQCC20, 5 MM, PLASTIC, MLF-20
产品类别无线/射频/通信    电信电路   
文件大小75KB,共7页
制造商TE Connectivity(泰科)
官网地址http://www.te.com
下载文档 详细参数 选型对比 全文预览

MD59-0039TR概述

TELECOM, CELLULAR, RF AND BASEBAND CIRCUIT, PQCC20, 5 MM, PLASTIC, MLF-20

MD59-0039TR规格参数

参数名称属性值
厂商名称TE Connectivity(泰科)
零件包装代码DFN
包装说明VQCCN,
针数20
制造商包装代码MLF
Reach Compliance Codeunknown
JESD-30 代码S-PQCC-N20
长度5 mm
功能数量1
端子数量20
封装主体材料PLASTIC/EPOXY
封装代码VQCCN
封装形状SQUARE
封装形式CHIP CARRIER, VERY THIN PROFILE
认证状态Not Qualified
座面最大高度1 mm
标称供电电压3.3 V
表面贴装YES
电信集成电路类型RF AND BASEBAND CIRCUIT
端子形式NO LEAD
端子节距0.65 mm
端子位置QUAD
宽度5 mm

MD59-0039TR文档预览

MD59-0039
Cellular CDMA Upconverter / Driver
820 - 850 MHz
Features
Highly integrated upconverter and driver amplifier
High linear output power, +5 dBm
Variable gain control
Low LO drive level, -5 dBm
Single 3.0 V supply
Miniature 5 mm MLF plastic package
Functional Block Diagram
LO SRC
MIX OUT
LO IN
GND
20
LOA VDD
IF IN+
1
GND
RFA VDD
RFA SRC
RFA IN
VVA CNTL
DRV SRC1
Description
M/A-COM’s MD59-0039 upconverter IC for cellular CDMA
applications integrates a mixer, RF amplifier, IF amplifier, and
LO buffer in a 5 millimeter (mm) square plastic micro lead-
frame package with exposd back side for improved high
frequency grounding.
M/A-COM designed the MD59-0039 to operate with balanced
IF inputs and a single-ended RF output with a frequency in the
800 to 900 MHz frequency band. The maximum conversion
gain is 24 dB, with a minimum 15 dB of gain range. The
MD59-0039 can produce 5 dBm of linear output power, with an
associated ACPR of - 56 dBc (IS-98). An internal LO buffer
amplifier allows the device to accommodate low LO drive levels
in the range of - 10 dBm to - 5 dBm.
M/A-COM fabricates the MD59-0039 using a 0.5 micron low
noise GaAs MESFET process. The process features full
passivation for increased performance and reliability.
IF IN-
IF+ VDD
IF- VDD
DRV SRC 2
DRV VDD2
Ordering Information
Part Number
MD59-0039
MD59-0039TR
MD59-0039RTR
1.
DRV VDD1
DRV OUT
Package
MLF-5.0 mm Plastic Package
Forward Tape and Reel
1
Reverse Tape and Reel
1
If specific reel size is required, consult factory for part number
assignment.
Electrical Specifications T
A
= +25° C, V
DD
= 3.0 Volts
Parameter
Cascaded Performance
RF Frequency
Conversion Gain
Linear Ouput Power @
ACPR of –56 dBc (IS-98)
Gain Range
Port Matches (all ports)
LO-to-RF Isolation
LO-to-IF Isolation
RF-to-IF Isolation
I
DD
Frequency = 836 MHz, P
IN
= -15 dBm
MHz
dB
dBm
dB
dB
dB
dB
dB
mA
10
40
30
20
80
820
24
+5.0
15
850
Test Conditions
Units
Min.
Typ.
Max.
Specifications subject to change without notice.
North America:
Tel. (800) 366-2266, Fax (800) 618-8883
Asia/Pacific:
Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe:
Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
GND
V 2.0
1
Cellular CDMA Upconverter / Driver, 820 - 850 MHz
Electrical Specifications T
A
= +25° C, V
DD
= 3.0 Volts (Cont’d)
Parameter
IF Input
IF Frequency
IF Input Level
IF Impedance
LO Input
LO Frequency
LO Input Level
MHz
dBm
954
-10
-5
Balanced
MHz
dBm
ohms
Test Conditions
Units
Min.
MD59-0039
Typ.
Max.
130
-16
265
979
0
Operating Instructions
The MD59-0039 is a highly integrated MMIC upconverter for
the 800 – 900 MHz cellular band. The upconverter provides
exceptional RF performance while drawing low DC current and
is packaged in a low cost plastic package. It is an ideal
candidate for light-weight, battery operated, portable handset
applications.
The MD59-0039 incorporates a differential IF amplifier,
balanced mixer, LOA, RFA, variable voltage attenuator and a
two-stage driver amplifier. Surface mount resistors, inductors
and capacitors are used in conjunction with the MMIC to
optimize the trade-offs between performance, tunability and
ease of use. The schematic on the previous page shows the
MMIC and required off-chip component values.
The input impedance of the differential IF amplifier is matched
externally to 50
at the desired IF frequency with L1, C1 and
C2. In addition, C1 and C2 also act as DC blocking capacitors
for the differential IF inputs. A 06-03 case style can be used for
L1 in most cases, but a 08-05 case style can be used if more gain
is required. Capacitor C3 is a low frequency bypass capacitor.
Inductors L2 and L3 help match the output of the differential IF
amplifier to the differential input of the mixer, as well as
providing RF chokes for the DC supply lines.
The LO input port is matched on chip to 50
Ω.
The LO buffer
amplifier provides the voltage gain required to drive the gate of
the mixer FET, while drawing a minimal amount of current.
The LO buffer amplifies the –10 dBm input signal to the level
required to drive the mixer. For optimum performance, it is
recommended to use a drive level of –3 dBm. C7 and C14 are
RF and low frequency bypass capacitors for the DC supply line.
Capacitor C13 is a source bypass capacitor for the LO amplifier.
The position of both C7 and C13 shown in the application
circuit may affect the gain of the RF amplifier and should be
placed as close the device as is practical.
The mixer is a balanced floating FET mixer that provides
exceptional linearity and isolation with low loss and no DC
current. The mixer uses a high side LO frequency. An external
image reject filter is required between the mixer output and RFA
input to prevent upconversion noise at the image frequency from
leaking onto the RF. This filter should have 50
input and
output impedance.
The topology of both the input and output matching networks
for the RF amplifier provides internal DC blocking capacitors, to
prevent unwanted DC leakage. C6 and C12 are RF and low
frequency bypass capacitors for the DC supply line. Capacitor
C11 is a source bypass capacitor for the RF amplifier. Similar to
the LOA, C11 and C12 should be placed as close the device as is
practical. The VVA is a T-attenuator topology, providing better
than 30 dB of attenuation from 800 to 900 MHz.
The two-stage driver amplifier is nominally biased with 40 mA.
An external resistor, R1, can be used to adjust the bias current of
the second stage, thereby adjusting the linear output power. C4,
C5, C9 and C10 are RF and low frequency bypass capacitors for
the DC supply lines, for the first and second stage of the driver
respectively. Capacitors C8 and C16 are the source bypass
capacitors for the driver amplifier.
Specifications subject to change without notice.
North America:
Tel. (800) 366-2266, Fax (800) 618-8883
Asia/Pacific:
Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe:
Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
V 2.0
2
Cellular CDMA Upconverter / Driver, 820 - 850 MHz
Recommended PCB Configuration
Pin Configuration
Pin #
1
2
3
4
5
6
Pin Name
LOA V
DD
IF+ IN
IF- IN
IF+ V
DD
IF- V
DD
DRV SRC2
MD59-0039
Description
LO amplifier supply voltage. RF bypass-
ing required
RF input to differential IF amplifier. DC
blocked
RF input to differential IF amplifier. DC
blocked
Differential IF amplifier supply voltage.
RF bypassing required
Differential IF amplifier supply voltage.
RF bypassing required
Source of RFA output stage FET. Off-
chip resistor may be used for current
control. RF bypassing required
50 ohm output of driver amplifier
2
nd
stage driver amplifier supply voltage.
RF bypassing required
1
st
stage driver amplifier supply voltage.
RF bypassing required
DC and RF ground
7
8
9
10
11
12
13
14
15
16
17
18
19
20
DRV OUT
DRV V
DD
2
DRV V
DD
1
GND
DRV SRC1
1
st
stage source of driver amplifier. RF
bypassing required
VVA CNTRL Control voltage input to voltage variable
attenuator
RFA IN
50 ohm input of RF amplifier
RFA SRC
RFA V
DD
MIX OUT
GND
GND
LO IN
LO SRC
Source of RF amplifier. RF bypassing
required
RF amplifier supply voltage. RF bypass-
ing required
RF output of downconverter
DC and RF ground
DC and RF ground
Local oscillator Input (-5 dBm typical)
Source of LO amplifier. RF bypassing
required
Specifications subject to change without notice.
North America:
Tel. (800) 366-2266, Fax (800) 618-8883
Asia/Pacific:
Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe:
Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
V 2.0
3
Cellular CDMA Upconverter / Driver, 820 - 850 MHz
Sample Board Schematic
LO
In
LOA
Vdd
C13
Mixer
Out
RFA
Vdd
MD59-0039
C14
1
20
C6
IF+
IN
IF-
IN
C7
C2
L1
C1
C12,
C11
RFA
In
VVA
Control
C15
L2
IF
Vdd
L3
C3
C16
C8
R1
Driver
Out
Driver
Vdd1
C9
C4, C5
C10
Driver
Vdd2
External Circuitry Parts List
Ref. Designation
L1
L2, L3
C3, C4, C5, C6, C7
C8, C9, C10, C11, C12,
C13, C14
C1, C2
C16
C15
R1
Value
270 nH
68 nH
1000 pF
150 pF
1000 pF
15 pF
47 pF
33 ohm
IF match
IF match
RF bypass
RF bypass
IF matching
RF bypass
RF bypass
Purpose
Current control from driver 2
nd
stage
Specifications subject to change without notice.
North America:
Tel. (800) 366-2266, Fax (800) 618-8883
Asia/Pacific:
Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe:
Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
V 2.0
4
Cellular CDMA Upconverter / Driver, 820 - 850 MHz
Typical Performance Curves
MD59-0039
Conversion Gain vs. VVA CNTRL, T = -30° C,
LO=-5dBm, IF=-15dBm, VBatt and VR5=3.0V
30
30
Conversion Gain vs. VVA CNTRL, T = +85° C,
LO=-5dBm, IF=-15dBm, VBatt and VR5=3.0V
CONVERSION GAIN (dB)
25
20
15
10
5
0
-5
-10
-15
VVA CNTRL = 0.7 V
VVA CNTRL = 1.7 V
VVA CNTRL = 2.7 V
CONVERSION GAIN (dB)
25
20
VVA CNTRL = 2.7 V
15
10
5
0
-5
810
820
830
840
850
860
870
VVA CNTRL = 0.7 V
VVA CNTRL = 1.7 V
810
820
830
840
850
860
870
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
Conversion Gain vs. VVA CNTRL, T = +25° C
LO=-5dBm, IF=-15dBm, VBatt and VR5=3.0V
30
Conversion Gain vs. Temperature,
VVA CNTRL=0.7V, LO=-5dBm, IF=-15dBm,
VBatt and VR5 = 3.0V
30
CONVERSION GAIN (dB)
CONVERSION GAIN (dB)
25
20
15
VVA CNTRL = 2.7 V
10
5
0
-5
810
820
830
840
850
860
870
VVA CNTRL = 0.7 V
VVA CNTRL = 1.7 V
25
20
15
10
5
0
-5
-10
-15
810
820
830
840
850
860
870
T = -30 C
T = +25 C
T = + 85 C
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
Conversion Gain vs. Temperature
VVA CNTRL=1.7V, LO=-5dBm, IF=-15dBm,
VBatt and VR5 = 3.0V
30
Conversion Gain vs. Temperature
VVA CNTRL=2.7V, LO=-5dBm, IF=-15dBm,
VBatt and VR5 = 3.0V
30
CONVERSION GAIN (dB)
CONVERSION GAIN (dB)
25
20
15
10
5
0
-5
810
820
830
840
850
860
870
T = -30 C
T = +25 C
T = + 85 C
25
20
15
T = +25 C
10
5
0
810
T = -30 C
T = + 85 C
820
830
840
850
860
870
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
Specifications subject to change without notice.
North America:
Tel. (800) 366-2266, Fax (800) 618-8883
Asia/Pacific:
Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe:
Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
V 2.0
5

MD59-0039TR相似产品对比

MD59-0039TR MD59-0039RTR MD59-0039
描述 TELECOM, CELLULAR, RF AND BASEBAND CIRCUIT, PQCC20, 5 MM, PLASTIC, MLF-20 TELECOM, CELLULAR, RF AND BASEBAND CIRCUIT, PQCC20, 5 MM, PLASTIC, MLF-20 TELECOM, CELLULAR, RF AND BASEBAND CIRCUIT, PQCC20, 5 MM, PLASTIC, MLF-20
厂商名称 TE Connectivity(泰科) TE Connectivity(泰科) TE Connectivity(泰科)
零件包装代码 DFN DFN DFN
包装说明 VQCCN, VQCCN, VQCCN,
针数 20 20 20
制造商包装代码 MLF MLF MLF
Reach Compliance Code unknown unknown unknown
JESD-30 代码 S-PQCC-N20 S-PQCC-N20 S-PQCC-N20
长度 5 mm 5 mm 5 mm
功能数量 1 1 1
端子数量 20 20 20
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 VQCCN VQCCN VQCCN
封装形状 SQUARE SQUARE SQUARE
封装形式 CHIP CARRIER, VERY THIN PROFILE CHIP CARRIER, VERY THIN PROFILE CHIP CARRIER, VERY THIN PROFILE
认证状态 Not Qualified Not Qualified Not Qualified
座面最大高度 1 mm 1 mm 1 mm
标称供电电压 3.3 V 3.3 V 3.3 V
表面贴装 YES YES YES
电信集成电路类型 RF AND BASEBAND CIRCUIT RF AND BASEBAND CIRCUIT RF AND BASEBAND CIRCUIT
端子形式 NO LEAD NO LEAD NO LEAD
端子节距 0.65 mm 0.65 mm 0.65 mm
端子位置 QUAD QUAD QUAD
宽度 5 mm 5 mm 5 mm

 
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