Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
·With
TO-220Fa package
·Low
collector saturation voltage
·High
switching speed
APPLICATIONS
·Switching
regulator
·DC-DC
converter
·High
frequency power amplifier
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
2SC3571
·
Fig.1 simplified outline (TO-220Fa) and symbol
Emitter
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
T
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-Peak
Base current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
500
400
7
7
15
3.5
30
150
-55~150
UNIT
V
V
V
A
A
A
W
℃
℃
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CEsat
V
BEsat
I
CBO
I
CEX
I
EBO
h
FE-1
h
FE -2
h
FE -3
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
DC current gain
CONDITIONS
I
C
=3.0A , I
B
=0.6A,L=1mH
I
C
=3A; I
B
=0.6A
I
C
=3A; I
B
=0.6A
V
CB
=400V; I
E
=0
V
CE
=400V; V
BE
=-1.5V
Ta=125℃
V
EB
=5V; I
C
=0
I
C
=0.1A ; V
CE
=5V
I
C
=1A ; V
CE
=5V
I
C
=3A ; V
CE
=5V
20
20
10
MIN
400
2SC3571
TYP.
MAX
UNIT
V
1.0
1.2
10
10
1.0
10
80
80
V
V
μA
μA
mA
μA
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=3.0A;I
B1
=-I
B2
=0.6A
V
CC
≈150V;
R
L
=50Ω
1.0
2.5
1.0
μs
μs
μs
h
FE-2
classifications
M
20-40
L
30-60
K
40-80
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC3571
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
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