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1N4005G

产品描述1 A, 600 V, SILICON, SIGNAL DIODE, DO-41
产品类别半导体    分立半导体   
文件大小42KB,共3页
制造商Diodes
官网地址http://www.diodes.com/
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1N4005G概述

1 A, 600 V, SILICON, SIGNAL DIODE, DO-41

1 A, 600 V, 硅, 信号二极管, DO-41

1N4005G规格参数

参数名称属性值
端子数量2
元件数量1
加工封装描述GREEN, PLASTIC PACKAGE-2
状态ACTIVE
包装形状ROUND
包装尺寸LONG FORM
端子形式WIRE
端子涂层PURE TIN
端子位置AXIAL
包装材料PLASTIC/EPOXY
结构SINGLE
壳体连接ISOLATED
二极管元件材料SILICON
二极管类型SIGNAL DIODE
最大重复峰值反向电压600 V
最大平均正向电流1 A

文档预览

下载PDF文档
1N4001G - 1N4007G
1.0A GLASS PASSIVATED RECTIFIER
Features
Glass Passivated Die Construction
High Current Capability and Low Forward Voltage Drop
Surge Overload Rating to 30A Peak
Lead Free Finish, RoHS Compliant (Note 4)
Mechanical Data
Case: DO-41 Plastic
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish - Tin. Plated Leads Solderable per MIL-STD-
202, Method 208
Polarity: Cathode Band
Ordering Information: See Page 3
Marking: Type Number
Weight: 0.30 grams (approximate)
Dim
DO-41 Plastic
Min
Max
A
25.40
B
4.06
5.21
C
0.71
0.864
D
2.00
2.72
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current (Note 1) @ T
A
= 75°C
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
Forward Voltage @ I
F
= 1.0A
Peak Reverse Current @T
A
= 25°C
at Rated DC Blocking Voltage @ T
A
= 125°C
Reverse Recovery Time (Note 3)
Typical Total Capacitance (Note 2)
Typical Thermal Resistance Junction to Ambient
Operating and Storage Temperature Range
Notes:
1.
2.
3.
4.
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
V
FM
I
RM
t
rr
C
T
R
θ
JA
T
J
,
T
STG
1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007
G
G
G
G
G
G
G
50
35
100
70
200
140
400
280
1.0
30
1.0
5.0
50
2.0
8.0
100
-65 to +175
600
420
800
560
1000
700
Unit
V
V
A
A
V
µA
µs
pF
°C/W
°C
Leads maintained at ambient temperature at a distance of 9.5mm from the case.
Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
Measured with I
F
= 0.5A, I
R
= -1A, I
rr
= 0.25A.
EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied, see EU Directive 2002/95/EC Annex Notes.
DS29002 Rev. 7 - 2
1 of 3
www.diodes.com
1N4001G-1N4007G
© Diodes Incorporated

1N4005G相似产品对比

1N4005G 1N4002G 1N4003G 1N4004G 1N4001G_2 1N4006G 1N4007G 1N4001G
描述 1 A, 600 V, SILICON, SIGNAL DIODE, DO-41 SIGNAL DIODE SIGNAL DIODE 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41 SIGNAL DIODE SILICON, SIGNAL DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41 1 A, 50 V, SILICON, SIGNAL DIODE, DO-204AL
状态 ACTIVE ACTIVE ACTIVE DISCONTINUED ACTIVE - ACTIVE ACTIVE
二极管类型 SIGNAL DIODE SIGNAL DIODE 信号二极管 信号二极管 SIGNAL DIODE - 信号二极管 信号二极管

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