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1N4006G

产品描述SILICON, SIGNAL DIODE
产品类别半导体    分立半导体   
文件大小42KB,共3页
制造商Diodes
官网地址http://www.diodes.com/
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1N4006G概述

SILICON, SIGNAL DIODE

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1N4001G - 1N4007G
1.0A GLASS PASSIVATED RECTIFIER
Features
Glass Passivated Die Construction
High Current Capability and Low Forward Voltage Drop
Surge Overload Rating to 30A Peak
Lead Free Finish, RoHS Compliant (Note 4)
Mechanical Data
Case: DO-41 Plastic
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish - Tin. Plated Leads Solderable per MIL-STD-
202, Method 208
Polarity: Cathode Band
Ordering Information: See Page 3
Marking: Type Number
Weight: 0.30 grams (approximate)
Dim
DO-41 Plastic
Min
Max
A
25.40
B
4.06
5.21
C
0.71
0.864
D
2.00
2.72
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current (Note 1) @ T
A
= 75°C
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
Forward Voltage @ I
F
= 1.0A
Peak Reverse Current @T
A
= 25°C
at Rated DC Blocking Voltage @ T
A
= 125°C
Reverse Recovery Time (Note 3)
Typical Total Capacitance (Note 2)
Typical Thermal Resistance Junction to Ambient
Operating and Storage Temperature Range
Notes:
1.
2.
3.
4.
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
V
FM
I
RM
t
rr
C
T
R
θ
JA
T
J
,
T
STG
1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007
G
G
G
G
G
G
G
50
35
100
70
200
140
400
280
1.0
30
1.0
5.0
50
2.0
8.0
100
-65 to +175
600
420
800
560
1000
700
Unit
V
V
A
A
V
µA
µs
pF
°C/W
°C
Leads maintained at ambient temperature at a distance of 9.5mm from the case.
Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
Measured with I
F
= 0.5A, I
R
= -1A, I
rr
= 0.25A.
EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied, see EU Directive 2002/95/EC Annex Notes.
DS29002 Rev. 7 - 2
1 of 3
www.diodes.com
1N4001G-1N4007G
© Diodes Incorporated

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描述 SILICON, SIGNAL DIODE SIGNAL DIODE SIGNAL DIODE 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41 SIGNAL DIODE 1 A, 600 V, SILICON, SIGNAL DIODE, DO-41 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41 1 A, 50 V, SILICON, SIGNAL DIODE, DO-204AL
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