EEPROM, 128KX8, 120ns, Parallel, CMOS, LDFP-32
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | Data Device Corporation |
| 包装说明 | LDFP-32 |
| Reach Compliance Code | compli |
| ECCN代码 | 3A001.A.2.C |
| 最长访问时间 | 120 ns |
| JESD-30 代码 | R-XDFP-F32 |
| 长度 | 20.828 mm |
| 内存密度 | 1048576 bi |
| 内存集成电路类型 | EEPROM |
| 内存宽度 | 8 |
| 功能数量 | 1 |
| 端子数量 | 32 |
| 字数 | 131072 words |
| 字数代码 | 128000 |
| 工作模式 | ASYNCHRONOUS |
| 最高工作温度 | 125 °C |
| 最低工作温度 | -55 °C |
| 组织 | 128KX8 |
| 封装主体材料 | UNSPECIFIED |
| 封装代码 | DFP |
| 封装形状 | RECTANGULAR |
| 封装形式 | FLATPACK |
| 并行/串行 | PARALLEL |
| 编程电压 | 5 V |
| 认证状态 | Not Qualified |
| 座面最大高度 | 2.4384 mm |
| 最大供电电压 (Vsup) | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | YES |
| 技术 | CMOS |
| 温度等级 | MILITARY |
| 端子形式 | FLAT |
| 端子节距 | 1.27 mm |
| 端子位置 | DUAL |
| 总剂量 | 25k Rad(Si) V |
| 宽度 | 10.414 mm |
| 最长写入周期时间 (tWC) | 10 ms |
| Base Number Matches | 1 |

| 28C011TRT2FI-12 | 28C011TRTFI-12 | 28C011TRPFS-20 | 28C011TRPFI-15 | 28C011TRT1FS-12 | 28C011TRT2FB-20 | 28C011TRT6RFB-12 | 28C011TRT6RFS-15 | 28C011TRT4FB-12 | |
|---|---|---|---|---|---|---|---|---|---|
| 描述 | EEPROM, 128KX8, 120ns, Parallel, CMOS, LDFP-32 | EEPROM, 128KX8, 120ns, Parallel, CMOS, LDFP-32 | EEPROM, 128KX8, 200ns, Parallel, CMOS, LDFP-32 | EEPROM, 128KX8, 150ns, Parallel, CMOS, LDFP-32 | EEPROM, 128KX8, 120ns, Parallel, CMOS, LDFP-32 | EEPROM, 128KX8, 200ns, Parallel, CMOS, LDFP-32 | EEPROM, | EEPROM, | EEPROM, 128KX8, 120ns, Parallel, CMOS, LDFP-32 |
| Reach Compliance Code | compli | compli | compli | compli | compli | compli | compli | compli | compli |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | - | 不符合 | 不符合 | 不符合 | - | 不符合 |
| 包装说明 | LDFP-32 | LDFP-32 | LDFP-32 | LDFP-32 | LDFP-32 | LDFP-32 | - | - | LDFP-32 |
| ECCN代码 | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | - | - | 3A001.A.2.C |
| 最长访问时间 | 120 ns | 120 ns | 200 ns | 150 ns | 120 ns | 200 ns | - | - | 120 ns |
| JESD-30 代码 | R-XDFP-F32 | R-XDFP-F32 | R-XDFP-F32 | R-XDFP-F32 | R-XDFP-F32 | R-XDFP-F32 | - | - | R-XDFP-F32 |
| 长度 | 20.828 mm | 20.828 mm | 20.828 mm | 20.828 mm | 20.828 mm | 20.828 mm | - | - | 20.828 mm |
| 内存密度 | 1048576 bi | 1048576 bi | 1048576 bi | 1048576 bi | 1048576 bi | 1048576 bi | - | - | 1048576 bi |
| 内存集成电路类型 | EEPROM | EEPROM | EEPROM | EEPROM | EEPROM | EEPROM | - | - | EEPROM |
| 内存宽度 | 8 | 8 | 8 | 8 | 8 | 8 | - | - | 8 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | - | - | 1 |
| 端子数量 | 32 | 32 | 32 | 32 | 32 | 32 | - | - | 32 |
| 字数 | 131072 words | 131072 words | 131072 words | 131072 words | 131072 words | 131072 words | - | - | 131072 words |
| 字数代码 | 128000 | 128000 | 128000 | 128000 | 128000 | 128000 | - | - | 128000 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | - | - | ASYNCHRONOUS |
| 最高工作温度 | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | - | - | 125 °C |
| 最低工作温度 | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | - | - | -55 °C |
| 组织 | 128KX8 | 128KX8 | 128KX8 | 128KX8 | 128KX8 | 128KX8 | - | - | 128KX8 |
| 封装主体材料 | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | - | - | UNSPECIFIED |
| 封装代码 | DFP | DFP | DFP | DFP | DFP | DFP | - | - | DFP |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | - | - | RECTANGULAR |
| 封装形式 | FLATPACK | FLATPACK | FLATPACK | FLATPACK | FLATPACK | FLATPACK | - | - | FLATPACK |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | - | - | PARALLEL |
| 编程电压 | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | - | - | 5 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | - | - | Not Qualified |
| 座面最大高度 | 2.4384 mm | 2.4384 mm | 3.6322 mm | 3.6322 mm | 2.4384 mm | 2.4384 mm | - | - | 2.4384 mm |
| 最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | - | - | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | - | - | 4.5 V |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | - | - | 5 V |
| 表面贴装 | YES | YES | YES | YES | YES | YES | - | - | YES |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | - | - | CMOS |
| 温度等级 | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | - | - | MILITARY |
| 端子形式 | FLAT | FLAT | FLAT | FLAT | FLAT | FLAT | - | - | FLAT |
| 端子节距 | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | - | - | 1.27 mm |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | - | - | DUAL |
| 总剂量 | 25k Rad(Si) V | - | 100k Rad(Si) V | 100k Rad(Si) V | 10k Rad(Si) V | 25k Rad(Si) V | - | - | 40k Rad(Si) V |
| 宽度 | 10.414 mm | 10.414 mm | 10.414 mm | 10.414 mm | 10.414 mm | 10.414 mm | - | - | 10.414 mm |
| 最长写入周期时间 (tWC) | 10 ms | 10 ms | 10 ms | 10 ms | 10 ms | 10 ms | - | - | 10 ms |
| Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 | - | - | - |
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