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SST27SF256-90-3C-PGE: 产品描述Flash, 32KX8, 90ns, PDIP28, LEAD FREE, PLASTIC, MO-015AH, DIP-28; 产品类别存储存储; 文件大小339KB，共28页; 制造商Silicon Laboratories Inc; 标准

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SST27SF256-90-3C-PGE概述

Flash, 32KX8, 90ns, PDIP28, LEAD FREE, PLASTIC, MO-015AH, DIP-28

SST27SF256-90-3C-PGE规格参数

参数名称	属性值
是否Rohs认证	符合
厂商名称	Silicon Laboratories Inc
零件包装代码	DIP
包装说明	DIP, DIP28,.6
针数	28
Reach Compliance Code	unknown
ECCN代码	EAR99
最长访问时间	90 ns
命令用户界面	NO
数据轮询	NO
JESD-30 代码	R-PDIP-T28
长度	36.83 mm
内存密度	262144 bit
内存集成电路类型	FLASH
内存宽度	8
功能数量	1
端子数量	28
字数	32768 words
字数代码	32000
工作模式	ASYNCHRONOUS
最高工作温度	70 °C
最低工作温度
组织	32KX8
封装主体材料	PLASTIC/EPOXY
封装代码	DIP
封装等效代码	DIP28,.6
封装形状	RECTANGULAR
封装形式	IN-LINE
并行/串行	PARALLEL
电源	5 V
编程电压	12 V
认证状态	Not Qualified
座面最大高度	5.08 mm
最大待机电流	0.0001 A
最大压摆率	0.03 mA
最大供电电压 (Vsup)	5.5 V
最小供电电压 (Vsup)	4.5 V
标称供电电压 (Vsup)	5 V
表面贴装	NO
技术	CMOS
温度等级	COMMERCIAL
端子形式	THROUGH-HOLE
端子节距	2.54 mm
端子位置	DUAL
切换位	NO
宽度	15.24 mm

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256 Kbit / 512 Kbit / 1 Mbit / 2 Mbit (x8)

Many-Time Programmable Flash

SST27SF256 / SST27SF512 / SST27SF010 / SST27SF020

SST27SF256 / 512 / 010 / 0205.0V-Read 256Kb / 512Kb / 1Mb / 2Mb (x8) MTP flash memories

Data Sheet

FEATURES:

• Organized as 32K x8 / 64K x8 / 128K x8 / 256K x8

• 4.5-5.5V Read Operation

• Superior Reliability

– Endurance: At least 1000 Cycles

– Greater than 100 years Data Retention

• Low Power Consumption

– Active Current: 20 mA (typical)

– Standby Current: 10 µA (typical)

• Fast Read Access Time

– 70 ns

– 90 ns

• Fast Byte-Program Operation

– Byte-Program Time: 20 µs (typical)

– Chip Program Time:

0.7 seconds (typical) for SST27SF256

1.4 seconds (typical) for SST27SF512

2.8 seconds (typical) for SST27SF010

5.6 seconds (typical) for SST27SF020

• Electrical Erase Using Programmer

– Does not require UV source

– Chip-Erase Time: 100 ms (typical)

• TTL I/O Compatibility

• JEDEC Standard Byte-wide EPROM Pinouts

• Packages Available

– 32-lead PLCC

– 32-lead TSOP (8mm x 14mm)

– 28-pin PDIP for SST27SF256/512

– 32-pin PDIP for SST27SF010/020

PRODUCT DESCRIPTION

The SST27SF256/512/010/020 are a 32K x8 / 64K x8 /

128K x8 / 256K x8 CMOS, Many-Time Programmable

(MTP) low cost flash, manufactured with SST’s proprietary,

high performance SuperFlash technology. The split-gate

cell design and thick oxide tunneling injector attain better

reliability and manufacturability compared with alternate

approaches. These MTP devices can be electrically erased

and programmed at least 1000 times using an external pro-

grammer with a 12 volt power supply. They have to be

erased prior to programming. These devices conform to

JEDEC standard pinouts for byte-wide memories.

Featuring high performance Byte-Program, the

SST27SF256/512/010/020 provide a Byte-Program time of

20 µs. Designed, manufactured, and tested for a wide

spectrum of applications, these devices are offered with an

endurance of at least 1000 cycles. Data retention is rated at

greater than 100 years.

The SST27SF256/512/010/020 are suited for applications

that require infrequent writes and low power nonvolatile

storage. These devices will improve flexibility, efficiency,

and performance while matching the low cost in nonvolatile

applications that currently use UV-EPROMs, OTPs, and

mask ROMs.

To meet surface mount and conventional through hole

requirements, the SST27SF256/512 are offered in 32-lead

PLCC, 32-lead TSOP and 28-pin PDIP packages. The

SST27SF010/020 are offered in 32-pin PDIP 32-lead

PLCC, and 32-lead TSOP packages. See Figures 1, 2, and

3 for pin assignments.

S71152-06-000

11/03

Device Operation

The SST27SF256/512/010/020 are a low cost flash

solution that can be used to replace existing UV-

EPROM, OTP, and mask ROM sockets. These devices

are functionally (read and program) and pin compatible

with industry standard EPROM products. In addition to

EPROM functionality, these devices also support elec-

trical Erase operation via an external programmer. They

do not require a UV source to erase, and therefore the

packages do not have a window.

Read

The Read operation of the SST27SF256/512/010/020 is

controlled by CE# and OE#. Both CE# and OE# have to be

low for the system to obtain data from the outputs. Once

the address is stable, the address access time is equal to

the delay from CE# to output (T

). Data is available at the

output after a delay of T

from the falling edge of OE#,

assuming that CE# pin has been low and the addresses

have been stable for at least T

-T

OE.

When the CE# pin is

high, the chip is deselected and a typical standby current of

10 µA is consumed. OE# is the output control and is used

to gate data from the output pins. The data bus is in high

impedance state when either CE# or OE# is high.

The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.

MTP is a trademark of Silicon Storage Technology, Inc.

These specifications are subject to change without notice.

SST27SF256-90-3C-PGE相似产品对比

	SST27SF256-90-3C-PGE	SST27SF256-70-3C-PGE	SST27SF256-90-3C-NHE	SST27SF256-70-3C-NHE	SST27SF256-70-3C-WHE	SST27SF256-90-3C-WHE
描述	Flash, 32KX8, 90ns, PDIP28, LEAD FREE, PLASTIC, MO-015AH, DIP-28	Flash, 32KX8, 70ns, PDIP28, LEAD FREE, PLASTIC, MO-015AH, DIP-28	Flash, 32KX8, 90ns, PQCC32, LEAD FREE, PLASTIC, MO-016AE, LCC-32	Flash, 32KX8, 70ns, PQCC32, LEAD FREE, PLASTIC, MO-016AE, LCC-32	Flash, 32KX8, 70ns, PDSO32, 8 X 14 MM, LEAD FREE, MO-142BA, TSOP1-32	Flash, 32KX8, 90ns, PDSO32, 8 X 14 MM, LEAD FREE, MO-142BA, TSOP1-32
是否Rohs认证	符合	符合	符合	符合	符合	符合
厂商名称	Silicon Laboratories Inc	Silicon Laboratories Inc	Silicon Laboratories Inc	Silicon Laboratories Inc	Silicon Laboratories Inc	Silicon Laboratories Inc
零件包装代码	DIP	DIP	QFJ	QFJ	TSOP1	TSOP1
包装说明	DIP, DIP28,.6	DIP, DIP28,.6	QCCJ, LDCC32,.5X.6	QCCJ, LDCC32,.5X.6	TSOP1, TSSOP32,.56,20	TSOP1, TSSOP32,.56,20
针数	28	28	32	32	32	32
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
最长访问时间	90 ns	70 ns	90 ns	70 ns	70 ns	90 ns
命令用户界面	NO	NO	NO	NO	NO	NO
数据轮询	NO	NO	NO	NO	NO	NO
JESD-30 代码	R-PDIP-T28	R-PDIP-T28	R-PQCC-J32	R-PQCC-J32	R-PDSO-G32	R-PDSO-G32
长度	36.83 mm	36.83 mm	13.97 mm	13.97 mm	12.4 mm	12.4 mm
内存密度	262144 bit	262144 bit	262144 bit	262144 bit	262144 bit	262144 bit
内存集成电路类型	FLASH	FLASH	FLASH	FLASH	FLASH	FLASH
内存宽度	8	8	8	8	8	8
功能数量	1	1	1	1	1	1
端子数量	28	28	32	32	32	32
字数	32768 words	32768 words	32768 words	32768 words	32768 words	32768 words
字数代码	32000	32000	32000	32000	32000	32000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
组织	32KX8	32KX8	32KX8	32KX8	32KX8	32KX8
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	DIP	DIP	QCCJ	QCCJ	TSOP1	TSOP1
封装等效代码	DIP28,.6	DIP28,.6	LDCC32,.5X.6	LDCC32,.5X.6	TSSOP32,.56,20	TSSOP32,.56,20
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	IN-LINE	IN-LINE	CHIP CARRIER	CHIP CARRIER	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
电源	5 V	5 V	5 V	5 V	5 V	5 V
编程电压	12 V	12 V	12 V	12 V	12 V	12 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	5.08 mm	5.08 mm	3.556 mm	3.556 mm	1.2 mm	1.2 mm
最大待机电流	0.0001 A	0.0001 A	0.0001 A	0.0001 A	0.0001 A	0.0001 A
最大压摆率	0.03 mA	0.03 mA	0.03 mA	0.03 mA	0.03 mA	0.03 mA
最大供电电压 (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
最小供电电压 (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
标称供电电压 (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V
表面贴装	NO	NO	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
端子形式	THROUGH-HOLE	THROUGH-HOLE	J BEND	J BEND	GULL WING	GULL WING
端子节距	2.54 mm	2.54 mm	1.27 mm	1.27 mm	0.5 mm	0.5 mm
端子位置	DUAL	DUAL	QUAD	QUAD	DUAL	DUAL
切换位	NO	NO	NO	NO	NO	NO
宽度	15.24 mm	15.24 mm	11.43 mm	11.43 mm	8 mm	8 mm

SST27SF256-90-3C-PGE

SST27SF256-90-3C-PGE概述

SST27SF256-90-3C-PGE规格参数

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