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Datasheet> 器件分类 > 分立半导体> 晶体管> 2SC2713GRTE85L

2SC2713GRTE85L: 产品描述TRANSISTOR 100 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Small Signal; 产品类别分立半导体晶体管; 文件大小267KB，共4页; 制造商Toshiba(东芝); 官网地址http://toshiba-semicon-storage.com/

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2SC2713GRTE85L概述

TRANSISTOR 100 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Small Signal

2SC2713GRTE85L规格参数

参数名称	属性值
包装说明	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknow
ECCN代码	EAR99
其他特性	LOW NOISE
最大集电极电流 (IC)	0.1 A
集电极-发射极最大电压	120 V
配置	SINGLE
最小直流电流增益 (hFE)	200
JEDEC-95代码	TO-236
JESD-30 代码	R-PDSO-G3
元件数量	1
端子数量	3
最高工作温度	125 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
极性/信道类型	NPN
认证状态	Not Qualified
表面贴装	YES
端子形式	GULL WING
端子位置	DUAL
晶体管应用	AMPLIFIER
晶体管元件材料	SILICON
标称过渡频率 (fT)	100 MHz
VCEsat-Max	0.3 V
Base Number Matches	1

2SC2713GRTE85L相似产品对比

	2SC2713GRTE85L	2SC2713BLTE85R	2SC2713BLTE85L	2SC2713GRTE85R	2SC2713G	2SC2713TE85L	2SC2713TE85R	2SC2713L	2SC2713-GR(TE85L,F
描述	TRANSISTOR 100 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Small Signal	TRANSISTOR SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Small Signal	TRANSISTOR SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal	Trans GP BJT NPN 120V 0.1A 3-Pin S-Mini T/R
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow	unknow	unknow	unknown
JESD-30 代码	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
端子数量	3	3	3	3	3	3	3	3	3
最高工作温度	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES	YES
端子形式	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Base Number Matches	1	1	1	1	1	1	1	1	1
包装说明	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	-	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	-	SMALL OUTLINE, R-PDSO-G3
ECCN代码	EAR99	EAR99	EAR99	EAR99	-	EAR99	EAR99	-	-
其他特性	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	-	LOW NOISE	LOW NOISE	-	LOW NOISE
最大集电极电流 (IC)	0.1 A	0.1 A	0.1 A	0.1 A	-	0.1 A	0.1 A	-	0.1 A
集电极-发射极最大电压	120 V	120 V	120 V	120 V	-	120 V	120 V	-	120 V
配置	SINGLE	SINGLE	SINGLE	SINGLE	-	SINGLE	SINGLE	-	SINGLE
最小直流电流增益 (hFE)	200	350	350	200	-	200	200	-	200
JEDEC-95代码	TO-236	TO-236	TO-236	TO-236	-	TO-236	TO-236	-	-
元件数量	1	1	1	1	-	1	1	-	1
极性/信道类型	NPN	NPN	NPN	NPN	-	NPN	NPN	-	NPN
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	-
晶体管应用	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	-	AMPLIFIER	AMPLIFIER	-	AMPLIFIER
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	-	SILICON	SILICON	-	SILICON
标称过渡频率 (fT)	100 MHz	100 MHz	100 MHz	100 MHz	-	100 MHz	100 MHz	-	100 MHz
VCEsat-Max	0.3 V	0.3 V	0.3 V	0.3 V	-	0.3 V	0.3 V	-	0.3 V

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