RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, L Band, Silicon, NPN
| 参数名称 | 属性值 |
| 厂商名称 | California Eastern Labs |
| 包装说明 | UNCASED CHIP, S-XUUC-N2 |
| Reach Compliance Code | unknown |
| ECCN代码 | EAR99 |
| 其他特性 | LOW NOISE |
| 最大集电极电流 (IC) | 0.065 A |
| 基于收集器的最大容量 | 0.6 pF |
| 集电极-发射极最大电压 | 12 V |
| 配置 | SINGLE |
| 最小直流电流增益 (hFE) | 50 |
| 最高频带 | L BAND |
| JESD-30 代码 | S-XUUC-N2 |
| 元件数量 | 1 |
| 端子数量 | 2 |
| 最高工作温度 | 200 °C |
| 封装主体材料 | UNSPECIFIED |
| 封装形状 | SQUARE |
| 封装形式 | UNCASED CHIP |
| 极性/信道类型 | NPN |
| 最小功率增益 (Gp) | 11 dB |
| 认证状态 | Not Qualified |
| 表面贴装 | YES |
| 端子形式 | NO LEAD |
| 端子位置 | UPPER |
| 晶体管应用 | AMPLIFIER |
| 晶体管元件材料 | SILICON |
| 标称过渡频率 (fT) | 8500 MHz |
| NE64500 | NE64535-T2 | NE64535-T1 | NE64587 | |
|---|---|---|---|---|
| 描述 | RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, L Band, Silicon, NPN | RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, L Band, Silicon, NPN | RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, L Band, Silicon, NPN | RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, X Band, Silicon, NPN |
| 厂商名称 | California Eastern Labs | California Eastern Labs | California Eastern Labs | California Eastern Labs |
| 包装说明 | UNCASED CHIP, S-XUUC-N2 | DISK BUTTON, O-CRDB-F4 | DISK BUTTON, O-CRDB-F4 | SMALL OUTLINE, R-CDSO-F2 |
| Reach Compliance Code | unknown | unknown | unknown | unknown |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 |
| 其他特性 | LOW NOISE | LOW NOISE | LOW NOISE | LOW NOISE |
| 最大集电极电流 (IC) | 0.065 A | 0.065 A | 0.065 A | 0.065 A |
| 基于收集器的最大容量 | 0.6 pF | 0.6 pF | 0.6 pF | 0.6 pF |
| 集电极-发射极最大电压 | 12 V | 12 V | 12 V | 12 V |
| 配置 | SINGLE | SINGLE | SINGLE | SINGLE |
| 最小直流电流增益 (hFE) | 50 | 50 | 50 | 50 |
| 最高频带 | L BAND | L BAND | L BAND | X BAND |
| JESD-30 代码 | S-XUUC-N2 | O-CRDB-F4 | O-CRDB-F4 | R-CDSO-F2 |
| 元件数量 | 1 | 1 | 1 | 1 |
| 端子数量 | 2 | 4 | 4 | 2 |
| 最高工作温度 | 200 °C | 200 °C | 200 °C | 200 °C |
| 封装主体材料 | UNSPECIFIED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
| 封装形状 | SQUARE | ROUND | ROUND | RECTANGULAR |
| 封装形式 | UNCASED CHIP | DISK BUTTON | DISK BUTTON | SMALL OUTLINE |
| 极性/信道类型 | NPN | NPN | NPN | NPN |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | YES | YES | YES | YES |
| 端子形式 | NO LEAD | FLAT | FLAT | FLAT |
| 端子位置 | UPPER | RADIAL | RADIAL | DUAL |
| 晶体管应用 | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON |
| 标称过渡频率 (fT) | 8500 MHz | 8500 MHz | 8500 MHz | 8500 MHz |
| 最小功率增益 (Gp) | 11 dB | 10 dB | 10 dB | - |
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