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IRF6716MTRPBF

产品描述39 A, 25 V, 0.0016 ohm, N-CHANNEL, Si, POWER, MOSFET
产品类别分立半导体    晶体管   
文件大小2MB,共6页
制造商International Rectifier ( Infineon )
官网地址http://www.irf.com/
标准
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IRF6716MTRPBF概述

39 A, 25 V, 0.0016 ohm, N-CHANNEL, Si, POWER, MOSFET

IRF6716MTRPBF规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称International Rectifier ( Infineon )
包装说明HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-3
针数3
Reach Compliance Codeunknow
ECCN代码EAR99
雪崩能效等级(Eas)330 mJ
外壳连接DRAIN
配置SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压25 V
最大漏极电流 (Abs) (ID)180 A
最大漏极电流 (ID)39 A
最大漏源导通电阻0.0016 Ω
FET 技术METAL-OXIDE SEMICONDUCTOR
JESD-30 代码R-XBCC-N3
JESD-609代码e4
湿度敏感等级3
元件数量1
端子数量3
工作模式ENHANCEMENT MODE
最高工作温度150 °C
封装主体材料UNSPECIFIED
封装形状RECTANGULAR
封装形式CHIP CARRIER
峰值回流温度(摄氏度)260
极性/信道类型N-CHANNEL
最大功率耗散 (Abs)78 W
最大脉冲漏极电流 (IDM)320 A
认证状态Not Qualified
表面贴装YES
端子面层Silver/Nickel (Ag/Ni)
端子形式NO LEAD
端子位置BOTTOM
处于峰值回流温度下的最长时间30
晶体管应用SWITCHING
晶体管元件材料SILICON

文档预览

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Benchmark MOSFETs | Selection Guide
Broad Portfolio of MOSFETS Targeting Multiple Market Segments
Industrial
Power Supply
Key Differentiators
• Industry brand leader in MOSFETs
• Leading performance MOSFETs
• Industry reputation for quality
• Broad product portfolio
• Widest range of packages up to 250V
Consumer/ Data
Processing
Key Products
• Discrete HEXFET
®
MOSFETs
• Dual HEXFET
®
MOSFETs
• FETKY
®
For a full list of the automotive MOSFETs please visit www.irf.com
Power QFN
FEATURES
• Industry brand leader in
MOSFET
• Benchmark thermal
performance
• Lowest R
DS(ON)
DirectFET
Large Can
DirectFET
®
Medium Can
DirectFET
®
®
30% larger
die than
D
2
Pak
and a 60%
reduction in
board space
Same die
size as
D-Pak,
54%
reduction in
board space
D
2
Pak
D-Pak
PQFN 5x6
Small Can
DirectFET
®
40% smaller
footprint
than
SO-8
SO-8
International Rectifier’s DirectFET
®
power package is a breakthrough
surface-mount power MOSFET packaging technology designed for
efficient topside cooling in combination with improved bottom-side
cooling, the new package can be cooled on both sides to cut part
count by up to 60%, and board space by as much as 50% compared to
devices in standard or enhanced SO-8 packages.
THE IR ADVANTAGE
Competitive R
DS(ON)
comparison made Q4 09
International Rectifier will release an expansive
portfolio of PQFN benchmark MOSFETs in early CY10.
Increases current density
Cuts MOSFET part count by 60%
Reduces PCB space by 50%
Up to 50°C lower operating temperature
increases reliability
Lower total system cost
Ultra low package resistance and
inductance
Industry lowest On-Resistance
Compatible with existing surface mount
techniques
Double-sided cooling for superior
thermal performance
For additional information on International Rectifier’s MOSFETs and other products call +1.800.981.8699 or +49.6102.884.311 or visit us at
www.irf.com

 
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