Datasheet> 器件分类 > 分立半导体> 二极管> 1N4002E

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1N4002E: 产品描述1 A, 100 V, SILICON, SIGNAL DIODE, DO-204AL; 产品类别分立半导体二极管; 文件大小79KB，共2页; 制造商Gulf Semiconductor; 官网地址http://www.gulfsemi.com/

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1N4002E概述

1 A, 100 V, SILICON, SIGNAL DIODE, DO-204AL

1N4002E规格参数

参数名称	属性值
厂商名称	Gulf Semiconductor
包装说明	O-PALF-W2
Reach Compliance Code	unknow
ECCN代码	EAR99
外壳连接	ISOLATED
配置	SINGLE
二极管元件材料	SILICON
二极管类型	RECTIFIER DIODE
JESD-30 代码	O-PALF-W2
元件数量	1
端子数量	2
最高工作温度	150 °C
最低工作温度	-50 °C
最大输出电流	1 A
封装主体材料	PLASTIC/EPOXY
封装形状	ROUND
封装形式	LONG FORM
最大重复峰值反向电压	100 V
表面贴装	NO
端子形式	WIRE
端子位置	AXIAL

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1N4001E THRU 1N4007E

GENERAL PURPOSE

PLASTIC RECTIFIER

VOLTAGE:50 TO 1000V

CURRENT: 1.0A

FEATURE

Molded case feature for auto insertion

High current capability

Low leakage current

High surge capability

High temperature soldering guaranteed

250°C/10sec/0.375”lead length at 5 lbs tension

A-405

MECHANICAL DATA

Terminal:Plated axial leads solderable per

MIL-STD 202E, method 208C

Case:Molded with UL-94 Class V-0 recognized Flame

Retardant Epoxy

Polarity:color band denotes cathode

Mounting position:any

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

(single-phase, half -wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated,

for capacitive load, derate current by 20%)

SYMBOL

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC blocking Voltage

Maximum Average Forward Rectified

Current 3/8”lead length at Ta =75°C

Peak Forward Surge Current 8.3ms single

Half sine-wave superimposed on rated load

Maximum Instantaneous Forward Voltage at

rated forward current

Maximum full load reverse current

full cycle at T

=75°C

Maximum DC Reverse Current

at rated DC blocking voltage

Typical Junction Capacitance

Typical Thermal Resistance

Ta =25°C

Ta =100°C

(Note 1)

(Note 2)

Vrrm

Vrms

Vdc

If(av)

Ifsm

Ir(av)

R(ja)

Tstg

1N4

001E

1N4

002E

100

1N4

003E

200

140

200

1N4

004E

400

280

400

1.0

30.0

1.1

30.0

1N4

005E

600

420

600

1N4

006E

800

560

800

1N4

007E

1000

700

1000

units

µA

°C/W

°C

Storage and Operation Junction Temperature

5.0

50.0

15.0

50.0

-50 to +150

Note:

1. Measured at 1.0 MHz and applied voltage of 4.0Vdc

2. Thermal Resistance from Junction to Ambient at 0.375”lead length, P.C. Board Mounted

Rev.A6

www.gulfsemi.com

1N4002E相似产品对比

	1N4002E	1N4003E	1N4005E
描述	1 A, 100 V, SILICON, SIGNAL DIODE, DO-204AL	1 A, 200 V, SILICON, SIGNAL DIODE, DO-204AL	1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AL
厂商名称	Gulf Semiconductor	Gulf Semiconductor	Gulf Semiconductor
包装说明	O-PALF-W2	O-PALF-W2	O-PALF-W2
Reach Compliance Code	unknow	unknow	unknow
ECCN代码	EAR99	EAR99	EAR99
外壳连接	ISOLATED	ISOLATED	ISOLATED
配置	SINGLE	SINGLE	SINGLE
二极管元件材料	SILICON	SILICON	SILICON
二极管类型	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
JESD-30 代码	O-PALF-W2	O-PALF-W2	O-PALF-W2
元件数量	1	1	1
端子数量	2	2	2
最高工作温度	150 °C	150 °C	150 °C
最低工作温度	-50 °C	-50 °C	-50 °C
最大输出电流	1 A	1 A	1 A
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	ROUND	ROUND	ROUND
封装形式	LONG FORM	LONG FORM	LONG FORM
最大重复峰值反向电压	100 V	200 V	600 V
表面贴装	NO	NO	NO
端子形式	WIRE	WIRE	WIRE
端子位置	AXIAL	AXIAL	AXIAL

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