CT20VS-8-T2: 产品描述Insulated Gate Bipolar Transistor, 400V V(BR)CES, N-Channel, TO-220S, 3 PIN; 产品类别分立半导体晶体管; 文件大小65KB，共2页; 制造商Mitsubishi(日本三菱); 官网地址http://www.mitsubishielectric.com/semiconductors/

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CT20VS-8-T2概述

Insulated Gate Bipolar Transistor, 400V V(BR)CES, N-Channel, TO-220S, 3 PIN

CT20VS-8-T2规格参数

	CT20VS-8-T2	CT20VS-8-T1
描述	Insulated Gate Bipolar Transistor, 400V V(BR)CES, N-Channel, TO-220S, 3 PIN	Insulated Gate Bipolar Transistor, 400V V(BR)CES, N-Channel, TO-220S, 3 PIN
厂商名称	Mitsubishi(日本三菱)	Mitsubishi(日本三菱)
零件包装代码	TO-220S	TO-220S
包装说明	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2
针数	3	3
Reach Compliance Code	unknown	unknown
ECCN代码	EAR99	EAR99
外壳连接	COLLECTOR	COLLECTOR
集电极-发射极最大电压	400 V	400 V
配置	SINGLE	SINGLE
JESD-30 代码	R-PSSO-G2	R-PSSO-G2
元件数量	1	1
端子数量	2	2
最高工作温度	150 °C	150 °C
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE
极性/信道类型	N-CHANNEL	N-CHANNEL
认证状态	Not Qualified	Not Qualified
表面贴装	YES	YES
端子形式	GULL WING	GULL WING
端子位置	SINGLE	SINGLE
晶体管元件材料	SILICON	SILICON

器件捷径: E0 E1 E2 E3 E4 E5 E6 E7 E8 E9 EA EB EC ED EE EF EG EH EI EJ EK EL EM EN EO EP EQ ER ES ET EU EV EW EX EY EZ F0 F1 F2 F3 F4 F5 F6 F7 F8 F9 FA FB FC FD FE FF FG FH FI FJ FK FL FM FN FO FP FQ FR FS FT FU FV FW FX FY FZ G0 G1 G2 G3 G4 G5 G6 G7 G8 G9 GA GB GC GD GE GF GG GH GI GJ GK GL GM GN GO GP GQ GR GS GT GU GV GW GX GZ H0 H1 H2 H3 H4 H5 H6 H7 H8 HA HB HC HD HE HF HG HH HI HJ HK HL HM HN HO HP HQ HR HS HT HU HV HW HX HY HZ I1 I2 I3 I4 I5 I6 I7 IA IB IC ID IE IF IG IH II IK IL IM IN IO IP IQ IR IS IT IU IV IW IX J0 J1 J2 J6 J7 JA JB JC JD JE JF JG JH JJ JK JL JM JN JP JQ JR JS JT JV JW JX JZ K0 K1 K2 K3 K4 K5 K6 K7 K8 K9 KA KB KC KD KE KF KG KH KI KJ KK KL KM KN KO KP KQ KR KS KT KU KV KW KX KY KZ

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