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US1G

产品描述1 A, 400 V, SILICON, SIGNAL DIODE, DO-214AC
产品类别半导体    分立半导体   
文件大小280KB,共2页
制造商DIOTECH
官网地址http://www.kdiode.com/
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US1G概述

1 A, 400 V, SILICON, SIGNAL DIODE, DO-214AC

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Reverse Voltage - 50 to 1000 Volts
SURFACE MOUNT ULTRA FAST RECTIFIER
US1A THRU US1M
Forward Current - 1.0 Ampere
FEATURES
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
For surface mounted applications
Ultra fast switching for high efficiency
SMA(DO-214AC)
Low reverse leakage
Built-in strain relief,ideal for automated placement
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds at terminals
.062(1.60)
.055(1.40)
.114(2.90)
.098(2.50)
.181(4.60)
.157(4.00)
.012(.305)
.006(.152)
.103(2.62)
.079(2.00)
.060(1.52)
.030(0.76)
.008(.203)
.002(.051)
MECHANICAL DATA
Case
: JEDEC DO-214AC molded plastic body
Terminals
: Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity
: Color band denotes cathode end
Mounting Position
: Any
Weight
:0.003 ounce, 0.093 grams
0.004 ounce, 0.111 grams SMA(H)
.208(5.28)
.188(4.80)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
Characteristic
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T
L
=90
C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 1.0A
Maximum DC reverse current
T
A
=25
C
at rated DC blocking voltage
T
A
=100
C
Maximum reverse recovery time
(NOTE 1)
Typical junction capacitance (NOTE 2)
Typical thermal resistance (NOTE 3)
Operating junction and storage temperature range
SYMBOLS
US1A US1B US1D US1G US1J
US1K US1M
UNITS
V
V
V
A
A
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
t
rr
C
J
R
JA
T
J
,
T
STG
50
35
50
100
70
100
200
140
200
400
280
400
1.0
30.0
600
420
600
800
560
800
1000
700
1000
1.0
1.3
5.0
100.0
50
15.0
50.0
-65 to +150
1.7
V
µA
75
ns
pF
C
/W
C
Note:
1.Reverse recovery condition I
F
=0.5A,I
R
=1.0A,Irr=0.25A
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3.P.C.B. mounted with 0.2x0.2
(5.0x5.0mm) copper pad areas

US1G相似产品对比

US1G US1B US1J US1K US1A US1D US1M
描述 1 A, 400 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC SIGNAL DIODE 1 A, 800 V, SILICON, SIGNAL DIODE 1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 200 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 1000 V, SILICON, SIGNAL DIODE

 
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