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US1M

产品描述1 A, 1000 V, SILICON, SIGNAL DIODE
产品类别半导体    分立半导体   
文件大小280KB,共2页
制造商DIOTECH
官网地址http://www.kdiode.com/
下载文档 详细参数 选型对比 全文预览

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US1M概述

1 A, 1000 V, SILICON, SIGNAL DIODE

1 A, 1000 V, 硅, 信号二极管

US1M规格参数

参数名称属性值
端子数量2
元件数量1
加工封装描述塑料, SMA, 2 PIN
无铅Yes
欧盟RoHS规范Yes
状态ACTIVE
包装形状矩形的
包装尺寸SMALL OUTLINE
表面贴装Yes
端子形式C BEND
端子涂层NOT SPECIFIED
端子位置
包装材料塑料/环氧树脂
结构单一的
二极管元件材料
二极管类型信号二极管
反向恢复时间最大0.0750 us
最大重复峰值反向电压1000 V
最大平均正向电流1 A

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Reverse Voltage - 50 to 1000 Volts
SURFACE MOUNT ULTRA FAST RECTIFIER
US1A THRU US1M
Forward Current - 1.0 Ampere
FEATURES
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
For surface mounted applications
Ultra fast switching for high efficiency
SMA(DO-214AC)
Low reverse leakage
Built-in strain relief,ideal for automated placement
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds at terminals
.062(1.60)
.055(1.40)
.114(2.90)
.098(2.50)
.181(4.60)
.157(4.00)
.012(.305)
.006(.152)
.103(2.62)
.079(2.00)
.060(1.52)
.030(0.76)
.008(.203)
.002(.051)
MECHANICAL DATA
Case
: JEDEC DO-214AC molded plastic body
Terminals
: Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity
: Color band denotes cathode end
Mounting Position
: Any
Weight
:0.003 ounce, 0.093 grams
0.004 ounce, 0.111 grams SMA(H)
.208(5.28)
.188(4.80)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
Characteristic
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T
L
=90
C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 1.0A
Maximum DC reverse current
T
A
=25
C
at rated DC blocking voltage
T
A
=100
C
Maximum reverse recovery time
(NOTE 1)
Typical junction capacitance (NOTE 2)
Typical thermal resistance (NOTE 3)
Operating junction and storage temperature range
SYMBOLS
US1A US1B US1D US1G US1J
US1K US1M
UNITS
V
V
V
A
A
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
t
rr
C
J
R
JA
T
J
,
T
STG
50
35
50
100
70
100
200
140
200
400
280
400
1.0
30.0
600
420
600
800
560
800
1000
700
1000
1.0
1.3
5.0
100.0
50
15.0
50.0
-65 to +150
1.7
V
µA
75
ns
pF
C
/W
C
Note:
1.Reverse recovery condition I
F
=0.5A,I
R
=1.0A,Irr=0.25A
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3.P.C.B. mounted with 0.2x0.2
(5.0x5.0mm) copper pad areas

US1M相似产品对比

US1M US1B US1J US1K US1A US1D US1G
描述 1 A, 1000 V, SILICON, SIGNAL DIODE 1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC SIGNAL DIODE 1 A, 800 V, SILICON, SIGNAL DIODE 1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 200 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 400 V, SILICON, SIGNAL DIODE, DO-214AC

 
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