SS32-SS315
SCHOTTKY BARRIER RECTIFIERS
PRODUCT SUMMARY
3.0 AMPS Surface Mount
SMC/DO-214AB
.126(3.20)
.114(2.90)
.245(6.22)
.220(5.59)
FEATURES
For surface mounted application
Easy pick and place
Metal to silicon rectifier, majority carrier conduction
Low power loss, high efficiency
High current capability, low VF
High surge current capability
Plastic material used carriers Underwriters
Laboratory Classification 94V-0
Epitaxial construction
High temperature soldering:
o
260 C / 10 seconds at terminals
.280(7.11)
.260(6.60)
.012(.31)
.006(.15)
.103(2.62)
.079(2.00)
.063(1.6)
.039(1.0)
.320(8.13)
.305(7.75)
.008(.20)
.004(.10)
MECANICAL DATA
Case: JEDEC DO-214AB Molded plastic
Terminals: Pure tin plated, lead free.
Polarity: Indicated by cathode band
Packaging: 16mm tape per EIA STD RS-481
Weight: 0.21gram
o
Dimensions in inches and (millimeters)
Pb-free; RoHS-compliant
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Symbol SS
32
Maximum Recurrent Peak Reverse Voltage
V
RRM
20
Maximum RMS Voltage
14
V
RMS
Maximum DC Blocking Voltage
20
V
DC
Type Number
SS
33
30
21
30
SS
34
40
28
40
SS
35
50
35
50
3.0
SS
36
60
42
60
SS
39
90
63
90
SS
310
100
70
100
SS
Units
315
150
V
105
V
150
V
A
Maximum Average Forward Rectified
Current at T
L
(See Fig. 1)
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
Maximum Instantaneous Forward Voltage
(Note 1)
IF= 3.0A @ 25
o
C
@ 100
o
C
o
Maximum DC Reverse Current @ T
A
=25
C
at
o
Rated DC Blocking Voltage
@ T
A
=125
C
Typical Thermal Resistance ( Note 2 )
I
(AV)
I
FSM
V
F
I
R
100
70
A
V
mA
mA
o
0.5
0.4
0.5
10
0.75
0.65
5
17
55
0.85
0.95
0.70
0.80
0.1
0.5
R
θJL
R
θJA
Operating Temperature Range
T
J
-55 to +125
Storage Temperature Range
T
STG
Notes:
1. Pulse Test with PW=300 usec, 1% Duty Cycle
C/W
o
o
-55 to +150
-55 to +150
C
C
04/05/2007 Rev.1.00
www.SiliconStandard.com
1
SS32-SS315
RATINGS AND CHARACTERISTIC
CURVES (SS32 THRU SS315)
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
3
100
FIG.2- MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
PEAK FORWARD SURGE CURRENT. (A)
AT RATED TL
8.3ms Single Half Sine Wave
JEDEC Method
AVERAGE FORWARD CURRENT. (A)
RESISTIVE OR
INDUCTIVE LOAD
80
SS35-SS315
2
SS32-SS34
60
1
40
20
PCB MOUNTED ON 0.6X0.6"
(16X16mm) COPPER PAD AREAS
0
50
60
70
80
90
100
110
120
o
130
140
150
160
01
LEAD TEMPERATURE. ( C)
10
NUMBER OF CYCLES AT 60Hz
100
FIG.3- TYPICAL FORWARD CHARACTERISTICS
40
TJ=25
0
C
FIG.4- TYPICAL REVERSE CHARACTERISTICS
20
10
TJ=125
0
C
SS35-SS36
INSTANTANEOUS FORWARD CURRENT. (A)
INSTANTANEOUS REVERSE CURRENT. (mA)
10
SS32-SS34
1
1
TJ=75
0
C
0.1
SS39-SS310
0.1
0.01
SS315
PULSE WIDTH=300 S
1% DUTY CYCLE
TJ=25
0
C
SS32-SS34
SS35-SS315
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.001
0
20
40
60
80
100
120
140
FORWARD VOLTAGE. (V)
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FIG.5- TYPICAL JUNCTION CAPACITANCE
TJ=25
0
C
f=1.0MHz
Vsig=50mVp-p
FIG.6- TYPICAL TRANSIENT THERMAL
CHARACTERISTICS
TRANSCIENT THERMAL IMPEDANCE, ( oC/W)
100
100
1000
JUNCTION CAPACITANCE.(pF)
10
100
1
SS32-SS34
SS35-SS36
SS39-SS315
10
0.1
1
10
0.1
0.01
0.1
1
t, PULSE DURATION, (sec)
10
100
REVERSE VOLTAGE. (V)
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
04/05/2007 Rev.1.00
www.SiliconStandard.com
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