Small Signal Field-Effect Transistor, 4A I(D), 200V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | Infineon(英飞凌) |
| 包装说明 | DIE-3 |
| Reach Compliance Code | unknown |
| ECCN代码 | EAR99 |
| 外壳连接 | DRAIN |
| 配置 | SINGLE |
| 最小漏源击穿电压 | 200 V |
| 最大漏极电流 (Abs) (ID) | 4 A |
| 最大漏极电流 (ID) | 4 A |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | R-XUUC-N3 |
| JESD-609代码 | e0 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 工作模式 | ENHANCEMENT MODE |
| 最高工作温度 | 150 °C |
| 封装主体材料 | UNSPECIFIED |
| 封装形状 | RECTANGULAR |
| 封装形式 | UNCASED CHIP |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 极性/信道类型 | P-CHANNEL |
| 最大功率耗散 (Abs) | 25 W |
| 认证状态 | Qualified |
| 参考标准 | MIL-19500/564F |
| 表面贴装 | YES |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | NO LEAD |
| 端子位置 | UPPER |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| JANHCA2N6851 | JANS2N6849U | JANKCA2N6851 | JANTXV2N6851 | JANTXV2N6849U | JANTXV2N6851U | JANTX2N6851U | JANS2N6851 | JANHCA2N6849 | JANKCA2N6849 | |
|---|---|---|---|---|---|---|---|---|---|---|
| 描述 | Small Signal Field-Effect Transistor, 4A I(D), 200V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3 | Transistor | Small Signal Field-Effect Transistor, 4A I(D), 200V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3 | Power Field-Effect Transistor, 4A I(D), 200V, 1.68ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | Power Field-Effect Transistor, 6.5A I(D), 100V, 0.345ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 | Power Field-Effect Transistor, 4A I(D), 200V, 1.68ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LCC-18 | Power Field-Effect Transistor, 4A I(D), 200V, 1.68ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LCC-18 | Power Field-Effect Transistor, 4A I(D), 200V, 1.68ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | Small Signal Field-Effect Transistor, 6.5A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3 | Small Signal Field-Effect Transistor, 6.5A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| 包装说明 | DIE-3 | , | DIE-3 | CYLINDRICAL, O-MBCY-W3 | CHIP CARRIER, R-CQCC-N15 | CHIP CARRIER, R-CQCC-N15 | CHIP CARRIER, R-CQCC-N15 | CYLINDRICAL, O-MBCY-W3 | DIE-3 | DIE-3 |
| Reach Compliance Code | unknown | unknow | compli | compli | compli | compli | compli | compli | unknown | unknown |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 配置 | SINGLE | Single | SINGLE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE | SINGLE |
| 最大漏极电流 (Abs) (ID) | 4 A | 6.5 A | 4 A | 4 A | 6.5 A | 4 A | 4 A | 4 A | 6.5 A | 6.5 A |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
| 极性/信道类型 | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL |
| 最大功率耗散 (Abs) | 25 W | 25 W | 25 W | 25 W | 25 W | 25 W | 25 W | 25 W | 25 W | 25 W |
| 表面贴装 | YES | YES | YES | NO | YES | YES | YES | NO | YES | YES |
| 外壳连接 | DRAIN | - | DRAIN | - | SOURCE | SOURCE | SOURCE | - | DRAIN | DRAIN |
| 最小漏源击穿电压 | 200 V | - | 200 V | 200 V | 100 V | 200 V | 200 V | 200 V | 100 V | 100 V |
| 最大漏极电流 (ID) | 4 A | - | 4 A | 4 A | 6.5 A | 4 A | 4 A | 4 A | 6.5 A | 6.5 A |
| JESD-30 代码 | R-XUUC-N3 | - | R-XUUC-N3 | O-MBCY-W3 | R-CQCC-N15 | R-CQCC-N15 | R-CQCC-N15 | O-MBCY-W3 | R-XUUC-N3 | R-XUUC-N3 |
| JESD-609代码 | e0 | e0 | - | e0 | e0 | e0 | e0 | e0 | e0 | - |
| 元件数量 | 1 | - | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 3 | - | 3 | 3 | 15 | 15 | 15 | 3 | 3 | 3 |
| 封装主体材料 | UNSPECIFIED | - | UNSPECIFIED | METAL | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | METAL | UNSPECIFIED | UNSPECIFIED |
| 封装形状 | RECTANGULAR | - | RECTANGULAR | ROUND | RECTANGULAR | RECTANGULAR | RECTANGULAR | ROUND | RECTANGULAR | RECTANGULAR |
| 封装形式 | UNCASED CHIP | - | UNCASED CHIP | CYLINDRICAL | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER | CYLINDRICAL | UNCASED CHIP | UNCASED CHIP |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 认证状态 | Qualified | - | Qualified | Qualified | Qualified | Qualified | Qualified | Qualified | Qualified | Qualified |
| 参考标准 | MIL-19500/564F | - | MIL-19500/564F | MIL-19500/564 | MIL-19500/564 | MIL-19500/564 | MIL-19500/564 | MIL-19500/564 | MIL-19500/564F | MIL-19500/564F |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | - | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | - |
| 端子形式 | NO LEAD | - | NO LEAD | WIRE | NO LEAD | NO LEAD | NO LEAD | WIRE | NO LEAD | NO LEAD |
| 端子位置 | UPPER | - | UPPER | BOTTOM | QUAD | QUAD | QUAD | BOTTOM | UPPER | UPPER |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 晶体管应用 | SWITCHING | - | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | - | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| Base Number Matches | - | 1 | 1 | 1 | 1 | 1 | 1 | 1 | - | - |
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