GUNN Diodes
TM
®
Anode Heat Sink
MG1041 – MG1059
Features
●
●
●
●
High Reliability
Low-Phase Noise
9.5–35.5 GHz Operation
Pulsed and CW Designs to 20 mW
Applications
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Motion Detectors
Transmitters and Receivers
Beacons
Automotive Collision Avoidance Radars
Radars
Radiometers
Instrumentation
Description
Microsemi’s GaAs Gunn diodes, epi-up (anode
heatsink), are fabricated from epitaxial layers grown
at MSC by the Vapor Phase Epitaxy technique. The
layers are processed using proprietary techniques
resulting in ultra- low phase and 1/f noise. The diodes
are available in a variety of microwave ceramic
packages for operation from 9.5–35.5 GHz.
Copyright
2008
Rev: 2009-01-19
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page 1
GUNN Diodes
TM
®
Anode Heat Sink
(Discrete Frequency: Anode Heatsink)
MG1041 – MG1059
Typ.
Operating Voltage
(V)
8
8
5
5
5
Max.
Operating Current
(mA)
140
200
200
300
300
CW Epi-Up Gunn Diodes (Specifications @ 25°C)
Part
Number
MG1052-11
MG1056-11
MG1054-11
MG1058-11
MG1059-11
Operating
Frequency
1
(GHz)
9.5–11.5
9.5–11.5
23.0–25.0
23.0–25.0
33.5–35.5
Min.
Power
2
(mW)
10
20
5
10
5
Package
Outline
3
M11
M11
M11
M11
M11
Pulsed Epi-Up Gunn Diodes (Specifications @ 25°C)
Part
Number
MG1041-11
MG1042-11
MG1043-11
MG1044-11
MG1045-11
MG1046-11
1
Operating
Frequency
1
(GHz)
9.5–11.5
9.5–11.5
9.5–11.5
23.0–25.0
23.0–25.0
23.0–25.0
Min.
Power
2
(mW)
10
20
30
5
10
20
Typ.
Operating Voltage
(V)
9
9
10
8
8
8
Max.
Operating Current
(mA)
110
140
180
120
150
200
Package
Outline
3
M11
M11
M11
M11
M11
M11
Microsemi Gunn diodes are specified to operate within a narrow range of a customer-designated center frequency within the operating frequency range shown.
Additional frequencies are available; Please contact the factory.
2
Power is measured using a critically coupled test cavity. For pulsed diodes, pulse width = 1 µS, duty factor = 1% typ.
3
Polarity: cathode is the cap and anode is the heatsink.
Typical Characteristics
1.0
25
-50°C
Power Output (mW)
0.8
Ratio
20
15
90°C
10
5
0
0
1
2
3
4
5
6
7
0.6
0.4
0.2
0
0
1
2
3
I
Threshold
I
Bias
V
Bias
V
Threshold
Ratio
Bias Voltage (V)
Power Output vs. Bias Voltage
I
Bias
Ratio vs. V
Bias
Ratio
IMPORTANT:
For the most current data, consult our website:
www.MICROSEMI.com
Specifications are subject to change. Consult factory for the latest information
.
These devices are ESD sensitive and must be handled using ESD precautions.
These products are supplied with a RoHS
complaint Gold finish
.
Copyright
2008
Rev: 2009-01-19
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page 2
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