SMART
Features
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®
SM5320830UUF6GU
September 8, 1997
Modular Technologies
32MByte (8M x 32) DRAM Module - 4Mx16 based
100-pin DIMM, Non-buffered
Part Numbers
SM53208301UF6GU
SM53208309UF6GU
Standard
:
JEDEC
Configuration
:
Non-ECC
Access Time
:
50/60/70ns
Operation Mode
:
FPM/EDO
Operating Voltage :
3.3V
Refresh
:
4K/8K
Device Physicals
:
400mil TSOP
Lead Finish
:
Gold
Length x Height
:
3.550" x 1.000"
No. of sides
:
Double-sided
Mating Connector (Examples)
Vertical
:
AMP-390070-6 (3.3V, Gold)
:
:
FPM, 3.3V
EDO, 3.3V
Note: Refer last page for all "U” options.
Functional Diagram
RAS0#
CAS0#
CAS1#
WE#
OE#
4Mx16
DRAM
4Mx16
DRAM
RAS2#
CAS2#
CAS3#
4Mx16
DRAM
RAS1#
DQ0~DQ15
4Mx16
DRAM
RAS3#
DQ16~DQ31
DQ0~DQ31
SA0~SA2
SCL
Notes : 1. A0~A11/A12 are connected to all DRAMs (A12 is NC
for 4K refresh module).
2. Data is terminated using 10
Ω
series resistor.
3. Refer to note on page 2 for details on CAS# control
scheme.
A0~A2 SDA
SCL
SERIAL PD
EEPROM
SDA
V
CC
V
SS
Decoupling capacitors
to all devices.
( All specifications of this device are subject to change without notice.)
C
orporate Headquarters:
4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: + 44-1908 234030 • Fax: + 44-1908-234191
Asia/Pacific:
Suite 6A, 64 Canning Hwy., Victoria Park, Perth, WA 6106, Australia • Tel: + 61-9-361-9705 • Fax: + 61-9-361-9715
1
SMART
Pin Name
A0~A11
A0~A9
A0~A12
A0~A8
DQ0~DQ31
RAS0#~RAS3#
CAS0#~CAS3#
WE#
®
SM5320830UUF6GU
September 8, 1997
Modular Technologies
Row Addresses for 4K Refresh Module
Column Addresses for 4K Refresh Module
Row Addresses for 8K Refresh Module
Column Addresses for 8K Refresh Module
Data Inputs/Outputs
Row Address Strobe Inputs
Column Address Strobe Inputs
Write Enable Input
OE#
SA0~SA2
SCL
SDA
V
CC
V
SS
NC
Output Enable Input
Decode Inputs
Serial PD Clock
Serial PD Data Input/Output
Power Supply
Ground
No Connection
Note:
CAS# v/s Data I/Os
CAS0#
CAS1#
CAS2#
CAS3#
controls
controls
controls
controls
DQ0~DQ7
DQ8~DQ15
DQ16~DQ23
DQ24~DQ31
Pin
No.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
Pin
Designation
V
SS
DQ0
DQ1
DQ2
DQ3
V
CC
DQ4
DQ5
DQ6
DQ7
CAS0#
V
SS
A0
A2
A4
A6
A8
A10
A12 (Note)
NC
V
CC
NC
NC
NC
NC
Pin
No.
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
Pin
Designation
V
SS
NC
WE#
RAS0#
RAS2#
V
CC
NC
NC
NC
NC
V
SS
CAS2#
DQ16
DQ17
DQ18
DQ19
V
CC
DQ20
DQ21
DQ22
DQ23
V
SS
SDA
SCL
V
CC
Pin
No.
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
Pin
Designation
V
SS
DQ8
DQ9
DQ10
DQ11
V
CC
DQ12
DQ13
DQ14
DQ15
CAS1#
V
SS
A1
A3
A5
A7
A9
A11
NC
NC
V
CC
NC
NC
NC
NC
Pin
No.
76
77
78
79
80
81
82
83
84
85
86
87
88
89
90
91
92
93
94
95
96
97
98
99
100
Pin
Designation
V
SS
NC
OE#
RAS1#
RAS3#
V
CC
NC
NC
NC
NC
V
SS
CAS3#
DQ24
DQ25
DQ26
DQ27
V
CC
DQ28
DQ29
DQ30
DQ31
V
SS
SA0
SA1
SA2
Note : A12 is NC for 4K refresh module.
C
orporate Headquarters:
4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: + 44-1908 234030 • Fax: + 44-1908-234191
Asia/Pacific:
Suite 6A, 64 Canning Hwy., Victoria Park, Perth, WA 6106, Australia • Tel: + 61-9-361-9705 • Fax: + 61-9-361-9715
2
SMART
FPM & EDO-based Modules
Absolute Maximum Ratings
Parameter
Voltage on any pin relative to V
SS
Power Dissipation
Operating Temperature
Storage Temperature
Short Circuit Output Current
®
SM5320830UUF6GU
September 8, 1997
Modular Technologies
DC Characteristics
Symbol
V
T
P
T
T
opr
T
stg
I
OS
Ratings
- 0.5 to +4.6
4
0 to +70
- 55 to +150
50
Unit
V
W
°
C
°
C
mA
Recommended DC Operating Conditions
(T
A
= 0 to +70
°
C)
Parameter
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Capacitance
(V
CC
= 3.3V
±
10%, T
A
= +25
°
C)
Parameter
Input Capacitance (Address)
Input Capacitance (RAS#)
Input Capacitance (CAS#)
Input Capacitance (WE#, OE# )
Input/Output Capacitance (DQ0~DQ31)
Notes : Capacitance is sampled per Mil-Std-883.
Symbol
C
I1
C
I2
C
I3
C
I4
C
I/O
Max
30
17
24
38
24
Unit
pF
pF
pF
pF
pF
Symbol
V
CC
V
SS
V
IH
V
IL
Min
3.0
0
2.0
-0.3
Typ
3.3
0
-
-
Max
3.6
0
V
CC
+0.3
0.8
Unit
V
V
V
V
C
orporate Headquarters:
4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: + 44-1908 234030 • Fax: + 44-1908-234191
Asia/Pacific:
Suite 6A, 64 Canning Hwy., Victoria Park, Perth, WA 6106, Australia • Tel: + 61-9-361-9705 • Fax: + 61-9-361-9715
3
SMART
®
SM5320830UUF6GU
September 8, 1997
Modular Technologies
DC Characteristics (cont’d)
(V
CC
= 3.3V
±
10%, V
SS
= 0V, T
A
= 0 to +70
°
C)
Parameter
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
Symbol
I
LI
I
LO
V
OH
V
OL
Test Conditions
0V
≤
V
in
≤
V
CC
+0.3V
0V
≤
V
out
≤
V
CC
D
out
= Disable
High I
out
= -2mA
Low I
out
= 2mA
2.4
-
-
0.4
2.4
-
-
0.4
2.4
-
-
0.4
V
V
50ns
60ns
Min Max Min Max
-40
40
-40
40
-20
20
-20
20
70ns
Min Max
-40
40
-20
20
Unit
µ
A
µ
A
FPM-based Modules
(V
CC
= 3.3V
±
10%, V
SS
= 0V, T
A
= 0 to +70
°
C)
Parameter
Operating Current
Symbol
I
CC1
Test Conditions
RAS#, CAS# cycling;
t
RC
= min.
LVTTL Interface
RAS#, CAS#
≥
V
IH
D
out
= High-Z
CMOS Interface
RAS#, CAS#
≥
V
CC
- 0.2V
D
out
= High-Z
CAS#=VIH; RAS#, Address
cycling @ t
RC
=min.
RAS#, CAS# cycling @
t
RC
=min.
RAS#=VIL, CAS#, Address
cycling @ t
PC
=min.
Refresh
4K
8K
50ns
304
184
8
Max.
60ns
284
164
8
Unit
70ns
264
144
8
mA
mA
mA
Note
1, 2
1, 2
Standby Current
I
CC2
4
4K
8K
4K
8K
4K
8K
304
184
304
184
204
184
4
284
164
284
164
184
164
4
264
144
264
144
164
144
mA
mA
mA
mA
mA
mA
mA
2
2
RAS#-only Refresh
Current
CAS#-before-RAS#
Refresh Current
Fast Page Mode
Current
Notes:
I
CC3
I
CC4
I
CC5
1, 3
1, 3
1. Values depend on output load condition when the device is selected. Maximum values are specified at the output open condition.
2. Address can be changed once or less while RAS# = V
IL
.
3. Address can be changed once or less while CAS# = V
IH
.
C
orporate Headquarters:
4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: + 44-1908 234030 • Fax: + 44-1908-234191
Asia/Pacific:
Suite 6A, 64 Canning Hwy., Victoria Park, Perth, WA 6106, Australia • Tel: + 61-9-361-9705 • Fax: + 61-9-361-9715
4
SMART
EDO-based Modules
®
SM5320830UUF6GU
September 8, 1997
Modular Technologies
DC Characteristics (cont’d)
(V
CC
= 3.3V±10%, V
SS
= 0V, T
A
= 0 to +70
°C)
Parameter
Operating Current
Symbol
I
CC1
Test Conditions
RAS#, CAS# cycling;
t
RC
= min.
LVTTL Interface
RAS#, CAS#
≥
V
IH
D
out
= High-Z
CMOS Interface
RAS#, CAS#
≥
V
CC
- 0.2V
D
out
= High-Z
CAS#=V
IH
; RAS#, Address
cycling @ t
RC
=min.
RAS#, CAS# cycling @
t
RC
=min.
RAS#=V
IL
, CAS#, Address
cycling @ t
HPC
=min.
Refresh 50ns
4K
304
8K
184
8
Max.
60ns
284
164
8
Unit
70ns
264
144
8
mA
mA
mA
Note
1, 2
1, 2
Standby Current
I
CC2
4
4K
8K
4K
8K
4K
8K
304
184
304
184
244
224
4
284
164
284
164
224
204
4
264
144
264
144
204
184
mA
mA
mA
mA
mA
mA
mA
2
2
RAS#-only Refresh
Current
CAS#-before-RAS#
Refresh Current
Hyper Page Mode
Current
Notes:
I
CC3
I
CC4
I
CC5
1, 3
1, 3
1. Values depend on output load condition when the device is selected. Maximum values are specified at the output open condition.
2. Address can be changed once or less while RAS# = V
IL
.
3. Address can be changed once or less while CAS# = V
IH
.
C
orporate Headquarters:
4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: + 44-1908 234030 • Fax: + 44-1908-234191
Asia/Pacific:
Suite 6A, 64 Canning Hwy., Victoria Park, Perth, WA 6106, Australia • Tel: + 61-9-361-9705 • Fax: + 61-9-361-9715
5
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