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JANTXV2N6764: 产品描述Power Field-Effect Transistor, 38A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, HERMETIC SEALED, TO-204, 2 PIN; 产品类别分立半导体晶体管; 文件大小469KB，共27页; 制造商Infineon(英飞凌); 官网地址http://www.infineon.com/

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JANTXV2N6764概述

Power Field-Effect Transistor, 38A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, HERMETIC SEALED, TO-204, 2 PIN

JANTXV2N6764规格参数

参数名称	属性值
是否Rohs认证	不符合
厂商名称	Infineon(英飞凌)
包装说明	TO-204, 2 PIN
Reach Compliance Code	unknown
ECCN代码	EAR99
其他特性	HIGH RELIABILITY
雪崩能效等级（Eas）	150 mJ
外壳连接	DRAIN
配置	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	100 V
最大漏极电流 (Abs) (ID)	38 A
最大漏极电流 (ID)	38 A
最大漏源导通电阻	0.065 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码	TO-204
JESD-30 代码	O-MBFM-P2
JESD-609代码	e0
元件数量	1
端子数量	2
工作模式	ENHANCEMENT MODE
最高工作温度	150 °C
封装主体材料	METAL
封装形状	ROUND
封装形式	FLANGE MOUNT
峰值回流温度（摄氏度）	NOT SPECIFIED
极性/信道类型	N-CHANNEL
最大功率耗散 (Abs)	150 W
最大脉冲漏极电流 (IDM)	152 A
认证状态	Qualified
参考标准	MIL-19500/543
表面贴装	NO
端子面层	Tin/Lead (Sn/Pb)
端子形式	PIN/PEG
端子位置	BOTTOM
处于峰值回流温度下的最长时间	NOT SPECIFIED
晶体管应用	SWITCHING
晶体管元件材料	SILICON

JANTXV2N6764相似产品对比

	JANTXV2N6764	JANTXV2N6768	JANTX2N6768	JANHCA2N6768	JANHCA2N6764	JANHCA2N6766	JANHCA2N6770	JANTX2N6764	JANTXV2N6766
描述	Power Field-Effect Transistor, 38A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, HERMETIC SEALED, TO-204, 2 PIN	Power Field-Effect Transistor, 14A I(D), 400V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, HERMETIC SEALED, TO-204, 2 PIN	Power Field-Effect Transistor, 14A I(D), 400V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, HERMETIC SEALED, TO-204, 2 PIN	Power Field-Effect Transistor, 14A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3	Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3	Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3	Power Field-Effect Transistor, 12A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3	Power Field-Effect Transistor, 38A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, HERMETIC SEALED, TO-204, 2 PIN	Power Field-Effect Transistor, 30A I(D), 200V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, HERMETIC SEALED, TO-204, 2 PIN
是否Rohs认证	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合
包装说明	TO-204, 2 PIN	TO-204, 2 PIN	TO-204, 2 PIN	DIE-3	DIE-3	DIE-3	DIE-3	TO-204, 2 PIN	HERMETIC SEALED, TO-204, 2 PIN
Reach Compliance Code	unknown	compli	compli	compli	compliant	unknown	unknown	unknown	unknown
雪崩能效等级（Eas）	150 mJ	11.3 mJ	11.3 mJ	700 mJ	150 mJ	500 mJ	750 mJ	150 mJ	60 mJ
外壳连接	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN
配置	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	100 V	400 V	400 V	400 V	100 V	200 V	500 V	100 V	200 V
最大漏极电流 (Abs) (ID)	38 A	14 A	14 A	14 A	38 A	30 A	12 A	38 A	30 A
最大漏极电流 (ID)	38 A	14 A	14 A	14 A	38 A	30 A	12 A	38 A	30 A
最大漏源导通电阻	0.065 Ω	0.4 Ω	0.4 Ω	0.3 Ω	0.055 Ω	0.085 Ω	0.4 Ω	0.065 Ω	0.09 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2	S-XUUC-N3	S-XUUC-N3	S-XUUC-N3	S-XUUC-N3	O-MBFM-P2	O-MBFM-P2
JESD-609代码	e0	e0	e0	e0	e0	e0	e0	e0	e0
元件数量	1	1	1	1	1	1	1	1	1
端子数量	2	2	2	3	3	3	3	2	2
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
最高工作温度	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
封装主体材料	METAL	METAL	METAL	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	METAL	METAL
封装形状	ROUND	ROUND	ROUND	SQUARE	SQUARE	SQUARE	SQUARE	ROUND	ROUND
封装形式	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	UNCASED CHIP	UNCASED CHIP	UNCASED CHIP	UNCASED CHIP	FLANGE MOUNT	FLANGE MOUNT
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
极性/信道类型	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
最大功率耗散 (Abs)	150 W	150 W	150 W	150 W	150 W	150 W	150 W	150 W	150 W
最大脉冲漏极电流 (IDM)	152 A	56 A	56 A	56 A	152 A	120 A	48 A	152 A	120 A
认证状态	Qualified	Qualified	Qualified	Qualified	Qualified	Qualified	Qualified	Qualified	Qualified
参考标准	MIL-19500/543	MIL-19500/543	MIL-19500/543	MIL-19500/543G	MIL-19500/543G	MIL-19500/543G	MIL-19500/543G	MIL-19500/543	MIL-19500/543
表面贴装	NO	NO	NO	YES	YES	YES	YES	NO	NO
端子面层	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
端子形式	PIN/PEG	PIN/PEG	PIN/PEG	NO LEAD	NO LEAD	NO LEAD	NO LEAD	PIN/PEG	PIN/PEG
端子位置	BOTTOM	BOTTOM	BOTTOM	UPPER	UPPER	UPPER	UPPER	BOTTOM	BOTTOM
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
晶体管应用	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
厂商名称	Infineon(英飞凌)	-	-	-	Infineon(英飞凌)	Infineon(英飞凌)	Infineon(英飞凌)	Infineon(英飞凌)	Infineon(英飞凌)
ECCN代码	EAR99	EAR99	EAR99	-	EAR99	EAR99	-	EAR99	EAR99
其他特性	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	-	-	-	-	HIGH RELIABILITY	HIGH RELIABILITY
JEDEC-95代码	TO-204	TO-204	TO-204	-	-	-	-	TO-204	TO-204

JANTXV2N6764

JANTXV2N6764在线购买

JANTXV2N6764概述

JANTXV2N6764规格参数

JANTXV2N6764相似产品对比

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