2N2904, 2N2904A, 2N2904AL
2N2905, 2N2905A, 2N2905AL
Radiation Hardened PNP Silicon Switching Transistors
Rev. V3
Features
•
Qualified to MIL-PRF-19500/290
•
Available in JAN, JANTX, JANTXV, JANS and
JANSR
•
Radiation Tolerant Levels M, D, P, L and R
•
TO-39 and TO-5 package styles
•
General Purpose Switching and Amplifier
Applications
Electrical Specifications @ T
A
= 25°C
Parameter
Off Characteristics:
I
C
=
-10
mA dc
2N2904, 2N2905
2N2904A, 2N2905A
2N2904AL, 2N2905AL
-40
-60
-60
Test Conditions
Symbol Units
Minimum Maximum
Collector
-
Emitter Breakdown
V
(BR)CEO
V dc
—
Collector
-
Base Cutoff Current
V
CB
=
-60
V dc
I
CBO1
µA dc
—
-10
Collector
-
Base Cutoff Current
V
CB
=
-50
V dc
2N2904, 2N2905
2N2904A, 2N2905A
2N2904AL, 2N2905AL
I
CBO2
nA dc
—
-20
-10
-10
Emitter
-
Base Cutoff Current
V
EB
=
-5.0
V dc
I
EBO1
µA dc
—
-10
Emitter
-
Base Cutoff Current
V
EB
=
-3.5
V dc
I
EBO2
nA dc
—
-50
Collector-Emitter Cutoff Current
2N2904, 2N2905;
V
CE
=
-40V
dc
2N2904A, 2N2904AL; V
CE
=
-60V
dc
2N2905A, 2N2905AL; V
CE
=
-60V
dc
I
CES
µA dc
1
1
1
1. Pulse Test: Pulse Width = 300 us, Duty Cycle < 2%.
1
(Continued next page)
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Visit
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for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com
2N2904, 2N2904A, 2N2904AL
2N2905, 2N2905A, 2N2905AL
Radiation Hardened PNP Silicon Switching Transistors
Rev. V3
Parameter
On Characteristics:
V
CE
=
-10
V dc, I
C
=
-0.1
mA dc
2N2904
2N2905
2N2904A, 2N2904AL
2N2905A, 2N2905AL
V
CE
=
-10
V dc, I
C
=
-1.0
mA dc
2N2904
2N2905
2N2904A, 2N2904AL
2N2905A, 2N2905AL
Test Conditions
Symbol Units
Minimum Maximum
Forward Current Transfer Ratio
h
FE1
20
35
40
75
Forward Current Transfer Ratio
h
FE2
25
50
40
100
175
450
175
450
Forward Current Transfer Ratio
V
CE
=
-10
V dc, I
C
=
-10
mA dc
2N2904
2N2905
2N2904A, 2N2904AL
2N2905A, 2N2905AL
h
FE3
35
75
40
100
Forward Current Transfer Ratio
V
CE
=
-10
V dc, I
C
=
-150
mA dc
2N2904
2N2905
2N2904A, 2N2904AL
2N2905A, 2N2905AL
h
FE4
40
40
100
100
120
120
300
300
Forward Current Transfer Ratio
V
CE
=
-10
V dc, I
C
=
-500
mA dc
2N2904
2N2905
2N2904A, 2N2904AL
2N2905A, 2N2905AL
h
FE5
20
30
40
50
Collector
-
Emitter Voltage (Saturated)
I
C
=
-150
mA dc, I
B
=
-15
mA dc
I
C
=
-500
mA dc, I
B
=
-50
mA dc
V
CE(sat)1
V
CE(sat)2
Vdc
—
-0.4
-1.6
Base
-
Emitter Voltage (Saturated)
I
C
=
-150
mA dc, I
B
=
-15
mA dc
I
C
=
-500
mA dc, I
B
=
-50
mA dc
V
BE(sat)1
V
BE(sat)2
Vdc
—
-1.3
-2.6
2
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com
2N2904, 2N2904A, 2N2904AL
2N2905, 2N2905A, 2N2905AL
Radiation Hardened PNP Silicon Switching Transistors
Rev. V3
Electrical Specifications ( T
A
= 25°C unless otherwise specified)
Parameter
Test Conditions
T
A
= +150
o
C
V
CB
=
-50
V dc
2N2904, 2N2905
2N2904A, 2N2904AL
2N2905A, 2N2905AL
Symbol Units
Minimum Maximum
Collector-Base Cutoff Current
I
CBO3
µA dc
-20
-10
-10
Small-Signal Short-Circuit,
Forward Current Transfer Ratio
T
A
=
-55
o
C
V
CE
=
-10
V dc, I
C
=
-1.0
mA dc
2N2904
2N2905
2N2904A, 2N2904AL
2N2905A, 2N2905AL
Test Conditions
h
fe6
15
30
20
50
—
Parameter
Dynamic Characteristics:
Small-Signal Short-Circuit
Forward Current Transfer Ratio
Symbol Units
Minimum Maximum
V
CE
=
-20
V dc, I
C
=
-50
mA dc, f = 100
MHz
V
CE
=
-10
V dc, I
C
=
-1
mA dc, f = 1 kHz
2N2904
2N2905
2N2904A, 2N2904AL
2N2905A, 2N2905AL
V
CB
=
-10
V dc, I
E
= 0, 100 kHz ≤ f ≤ 1 MHz
| h
fe
|
2.0
Small-Signal Short-Circuit,
Forward Current Transfer Ratio
h
fe
25
50
40
100
—
Open Circuit Output Capacitance
C
obo
pF
—
8
Input Capacitance
(Output Open-circuited)
Switching Characteristics:
Turn-On Time
Turn-Off Time
V
EB
=
-2.0
V dc, I
C
= 0,
100 kHz ≤ f ≤ 1 MHz
C
ibo
30
(See figure 6 of MIL-PRF-19500/291)
(See Figure 7 of MIL-PRF-19500/291)
t
on
t
on
ns
ns
—
—
45
300
3
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com
2N2904, 2N2904A, 2N2904AL
2N2905, 2N2905A, 2N2905AL
Radiation Hardened PNP Silicon Switching Transistors
Rev. V3
Absolute Maximum Ratings (T
A
= 25°C unless otherwise specified)
Ratings
Collector
-
Emitter Voltage
2N2904, 2N2905
2N2904A, L; 2N2905A, L
Symbol
Value
V
CEO
-40
V dc
-60
V dc
Collector
-
Base Voltage
V
CBO
-60
V dc
Emitter
-
Base Voltage
V
EBO
-5.0
V dc
Collector Current
I
C
-600
mA dc
Total Power Dissipation
@ T
A
= +25°C
P
T
(1)
0.8 W
Total Power Dissipation
@ T
C
= +25°C
P
T
(2)
3.0 W
Thermal Resistance, Junction to Ambient
R
ᶿJA
(1) (2)
195
o
C/W
Thermal Resistance, Junction to Case
R
ᶿJC
(1) (2)
50
o
C/W
Operating & Storage Temperature Range
T
J
, T
STG
-65°C
to +200°C
Notes: (1) For derating, see figure 2 and figure 3 of MIL-PRF-19500/290
(2) For thermal impedance, see figure 4 and figure 5 of MIL-PRF-19500/290
4
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com
2N2904, 2N2904A, 2N2904AL
2N2905, 2N2905A, 2N2905AL
Radiation Hardened PNP Silicon Switching Transistors
Rev. V3
Outline Drawing (TO-39)
5
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com
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