Power Field-Effect Transistor, 3.5A I(D), 1000V, 5.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA,
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | Omnirel Corp |
| Reach Compliance Code | unknown |
| 其他特性 | HIGH RELIABILITY |
| 雪崩能效等级（Eas） | 130 mJ |
| 外壳连接 | ISOLATED |
| 配置 | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 1000 V |
| 最大漏极电流 (Abs) (ID) | 3.5 A |
| 最大漏极电流 (ID) | 3.5 A |
| 最大漏源导通电阻 | 5.2 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-254AA |
| JESD-30 代码 | R-MSFM-P3 |
| JESD-609代码 | e0 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 工作模式 | ENHANCEMENT MODE |
| 最高工作温度 | 150 °C |
| 封装主体材料 | METAL |
| 封装形状 | RECTANGULAR |
| 封装形式 | FLANGE MOUNT |
| 极性/信道类型 | N-CHANNEL |
| 最大功率耗散 (Abs) | 90 W |
| 最大脉冲漏极电流 (IDM) | 14 A |
| 认证状态 | Not Qualified |
| 表面贴装 | NO |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | PIN/PEG |
| 端子位置 | SINGLE |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| OM3N100CSA | OM1N100CST | OM5N100CSA | OM1N100CSA | OM6N100CSA | |
|---|---|---|---|---|---|
| 描述 | Power Field-Effect Transistor, 3.5A I(D), 1000V, 5.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, | Power Field-Effect Transistor, 0.5A I(D), 1000V, 8.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, | Power Field-Effect Transistor, 5A I(D), 1000V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, | Power Field-Effect Transistor, 0.5A I(D), 1000V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, | Power Field-Effect Transistor, 6A I(D), 1000V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown |
| 其他特性 | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY |
| 雪崩能效等级（Eas） | 130 mJ | 130 mJ | 850 mJ | 130 mJ | 850 mJ |
| 外壳连接 | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 1000 V | 1000 V | 1000 V | 1000 V | 1000 V |
| 最大漏极电流 (Abs) (ID) | 3.5 A | 0.5 A | 5 A | 0.5 A | 6 A |
| 最大漏极电流 (ID) | 3.5 A | 0.5 A | 5 A | 0.5 A | 6 A |
| 最大漏源导通电阻 | 5.2 Ω | 8.2 Ω | 3 Ω | 8 Ω | 2 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-254AA | TO-257AA | TO-254AA | TO-254AA | TO-254AA |
| JESD-30 代码 | R-MSFM-P3 | R-MSFM-P3 | R-MSFM-P3 | R-MSFM-P3 | R-MSFM-P3 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 |
| 元件数量 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 3 | 3 | 3 | 3 | 3 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
| 封装主体材料 | METAL | METAL | METAL | METAL | METAL |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 最大功率耗散 (Abs) | 90 W | 90 W | 130 W | 90 W | 130 W |
| 最大脉冲漏极电流 (IDM) | 14 A | 14 A | 24 A | 14 A | 24 A |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | NO | NO | NO | NO | NO |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | PIN/PEG | PIN/PEG | PIN/PEG | PIN/PEG | PIN/PEG |
| 端子位置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON |
| Base Number Matches | - | 1 | 1 | 1 | - |
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