Datasheet> 器件分类 > 分立半导体> 晶体管> IRGCC30FE

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IRGCC30FE: 产品描述Insulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel, DIE-2; 产品类别分立半导体晶体管; 文件大小18KB，共1页; 制造商Infineon(英飞凌); 官网地址http://www.infineon.com/

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IRGCC30FE概述

Insulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel, DIE-2

IRGCC30FE规格参数

参数名称	属性值
是否Rohs认证	不符合
厂商名称	Infineon(英飞凌)
包装说明	DIE-2
Reach Compliance Code	unknown
ECCN代码	EAR99
其他特性	FAST SPEED
集电极-发射极最大电压	600 V
配置	SINGLE
门极发射器阈值电压最大值	5.5 V
JESD-30 代码	R-XUUC-N2
JESD-609代码	e0
元件数量	1
端子数量	2
封装主体材料	UNSPECIFIED
封装形状	RECTANGULAR
封装形式	UNCASED CHIP
峰值回流温度（摄氏度）	NOT SPECIFIED
极性/信道类型	N-CHANNEL
认证状态	Not Qualified
表面贴装	YES
端子面层	TIN LEAD
端子形式	NO LEAD
端子位置	UPPER
处于峰值回流温度下的最长时间	NOT SPECIFIED
晶体管元件材料	SILICON

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PD-9.1430

TARGET

IRGCC30FE

IRGCC30FE IGBT Die in Wafer Form

600 V

Size 3

Fast Speed

5" Wafer

Electrical Characteristics ( Wafer Form )

Parameter

CE (on)

(BR)CES

GE(th)

CES

GES

Description

Collector-to-Emitter Saturation Voltage

Colletor-to-Emitter Breakdown Voltage

Gate Threshold Voltage

Zero Gate Voltage Collector Current

Gate-to-Emitter Leakage Current

Guaranteed (Min/Max)

Test Conditions

2.7V Max.

= 17A, T

= 25°C, V

= 15V

600V Min.

= 25°C, I

CES

= 250µA, V

= 0V

3.0V Min., 5.5V Max.

= V

, T

=25°C, I

=250µA

250 µA Max.

= 25°C, V

= 600V

500 nA Max.

= 25°C, V

= +/- 20V

Mechanical Data

Norminal Backmetal Composition, Thickness:

Norminal Front Metal Composition, Thickness:

Dimensions:

Wafer Diameter:

Wafer thickness:

Relevant Die Mechanical Dwg. Number

Minimum Street Width

Reject Ink Dot Size

Ink Dot Location

Recommended Storage Environment:

Reference Standard IR packaged part ( for design ) : IRGBC30F

Cr-Ni-Ag (1 kA-4kA-6kA )

99% Al, 1% Si (3 microns)

0.133" x 0.176"

125mm, with std. < 100 > flat

.015" + / -.003"

01-5120

100 Microns

0.25mm Diameter Minimum

Consistant throughout same wafer lot

Store in original container, in dessicated

nitrogen, with no contamination

Die Outline

INK DOT

LOCATION

2.34

(.92 )

NOTES :

1. ALL DIM ENSIONS ARE SHOWN IN MILLIMETERS ( INCHES )

2. CONTROLLING DIMENSION : ( INCH )

3. LETTER DESIGNATION :

S = SOURCE

G = GATE

4. DIMENSIONAL TOLERANCES

BONDING PADS : < 0.635 TOLERANCE = +/- 0.013

WIDTH

< (.0250 ) TOLERANCE =+/- (.0005 )

> 0.635 TOLERANCE = +/- 0.025

LENGTH

> (.0250 ) TOLERANCE = +/- (.0010 )

OVERALL DIE

< 1.270 TOLERANCE = +/- 0.102

WIDTH

< (.050 ) TOLERANCE = +/- (.004 )

> 0.635 TOLERANCE = +/- 0.203

LENGTH

> (.050 ) TOLERANCE = +/- (.008 )

5. UNLESS OTHERWISE NOTED ALL DIE ARE GEN III

1.12

(.044 )

EM ITTER

4.47

(.176 )

GATE

0.74

(.029 )

3.38

(.133 )

IRGCC30FE相似产品对比

	IRGCC30FE	IRGCC30FEPBF
描述	Insulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel, DIE-2	Insulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel, DIE-2
是否Rohs认证	不符合	符合
厂商名称	Infineon(英飞凌)	Infineon(英飞凌)
包装说明	DIE-2	UNCASED CHIP, R-XUUC-N2
Reach Compliance Code	unknown	compliant
其他特性	FAST SPEED	FAST SPEED
集电极-发射极最大电压	600 V	600 V
配置	SINGLE	SINGLE
JESD-30 代码	R-XUUC-N2	R-XUUC-N2
元件数量	1	1
端子数量	2	2
封装主体材料	UNSPECIFIED	UNSPECIFIED
封装形状	RECTANGULAR	RECTANGULAR
封装形式	UNCASED CHIP	UNCASED CHIP
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED
极性/信道类型	N-CHANNEL	N-CHANNEL
表面贴装	YES	YES
端子形式	NO LEAD	NO LEAD
端子位置	UPPER	UPPER
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED
晶体管元件材料	SILICON	SILICON

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