Datasheet> 器件分类 > 分立半导体> 晶体管> NEZ5964-4DL

NEZ5964-4DL: 产品描述RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, T-61, 2 PIN; 产品类别分立半导体晶体管; 文件大小66KB，共6页; 制造商California Eastern Labs; 官网地址http://www.cel.com/

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NEZ5964-4DL概述

RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, T-61, 2 PIN

NEZ5964-4DL规格参数

参数名称	属性值
厂商名称	California Eastern Labs
包装说明	FLANGE MOUNT, R-CDFM-F2
针数	2
Reach Compliance Code	unknown
ECCN代码	EAR99
外壳连接	SOURCE
配置	SINGLE
最小漏源击穿电压	10 V
最大漏极电流 (ID)	1.5 A
FET 技术	METAL SEMICONDUCTOR
最高频带	C BAND
JESD-30 代码	R-CDFM-F2
元件数量	1
端子数量	2
工作模式	DEPLETION MODE
封装主体材料	CERAMIC, METAL-SEALED COFIRED
封装形状	RECTANGULAR
封装形式	FLANGE MOUNT
极性/信道类型	N-CHANNEL
认证状态	Not Qualified
表面贴装	YES
端子形式	FLAT
端子位置	DUAL
晶体管应用	AMPLIFIER
晶体管元件材料	GALLIUM ARSENIDE

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C-BAND INTERNALLY

MATCHED POWER GaAs MESFET

FEATURES

•

HIGH P

OUT

18W (42.5 dBm) Typ P

1dB

for NEZ5964-15D/15DL

9W (39.5 dBm) Typ P

1dB

for NEZ5964-8D/8DL

4.5W (36.5 dbm) Typ P

1dB

for NEZ5964-4D/4DL

HIGH EFFICIENCY

37%

ADD

for 4.5W Device

35%

ADD

for 9W Device

33%

ADD

for 18W Device

LOW IMD

-45 dBc IM

@ 31.5 dBm P

OUT

(SCL) -15DL

-45 dBc IM

@ 29 dBm P

OUT

(SCL) -8DL

-45 dBc IM

@ 26 dBm P

OUT

(SCL) -4DL

SiO

PASSIVATED CHIP

For Power/Gain Stability Under RF Overdrive

CLASS A OPERATION

INTERNALLY MATCHED (IN/OUT)

SUPERIOR GAIN FLATNESS

INDUSTRY COMPATIBLE HERMETIC PACKAGES

= 25°C)

NEZ5964-4D

NEZ5964-4DL

T-61

UNITS MIN

dBm

dBc

°C/W

°C

35.5

NEZ5964-8D

NEZ5964-8DL

T-61

NEZ5964-15D

NEZ5964-15DL

NEZ5964-8D

NEZ5964-8DL

NEZ5964-4D

NEZ5964-4DL

OUTPUT POWER AND EFFICIENCY

vs. INPUT POWER

100%

-15D

-8D

OUT

-4D

60%

80%

•

-4D

-8D

-15D

Efficiency

20%

40%

•

Input Power, P

(dBm)

ELECTRICAL CHARACTERISTICS

PART NUMBER

PACKAGE OUTLINE

SYMBOLS PARAMETERS AND CONDITIONS

1dB

Output Power at P

IdB1

DSQ

= 0.8A, (RF Off)

DSQ

= 1.6A

DSQ

= 4.0A

NEZ5964-15D

NEZ5964-15DL

T-65

TYP MAX TEST CONDITIONS

= 10V

f = 5.9

to 6.45 GHz

6.0

Zs = Z

50 ohms

= I0V

= 6.44 GHz

= 6.45 GHZ

2 Equal Tones

TYP MAX MIN

36.5

38.5

1.1

10.0

-45

TYP MAX MIN

39.5

41.5

42.5

4.4

9.0

2.2

9.5

Power Added Efficiency @ P

1dB

Drain Current at P

1dB

Linear Gain

3rd Order Intermodulation Distortion

-XDL Pout = 26 dBm SCL

, I

DSQ

= 0.5 x I

DSS

Option Pout = 29 dBm SCL

, I

DSQ

= 0.5 x I

DSS

Only Pout = 31.5 dBm SCL

, I

DSQ

= 0.5 x I

DSS

Saturated Drain Current, V

= 0 V

Pinch Off Voltage

= 15 mA

= 30 mA

= 60 mA

DGO

Drain - Gate Breakdown Voltage

= 15 mA

= 30 mA

= 60 mA

Transconductance

= I A

= 2 A

= 4 A

TH(CH-C)

Thermal Resistance (Channel to Case)

∆T

(CH-C)

Channel Temperature Rise

ADD

1.5

8.5

-42

3.0

8.0

9.0

-45

1.0

-3.5

2.3

-2.0

3.5

-0.5

-3.5

-2.0

2.0

4.5

-42

7.0

4.0

-45

9.2

-42

14.0

= 2.5 V

-0.5

-3.5

-2.2

-0.5

1300

2600

5.0

6.0

2.5

3.0

5200

1.3

1.5

Notes:

1. P

1dB

: Ouptut Power at the 1dB Gain Compression Point.

2. SCL: Single Carrier Level.

3. Maximum Spec Applies to -XDL Option Only.

∆T

(CH-C)

= T

- T

= 10 V x I

DSQ

x R

TH (CH-C) MAX

California Eastern Laboratories

Power Added Efficiency,

ADD

(%)

Output Power, P

OUT

(dBm)

NEZ5964-4DL相似产品对比

	NEZ5964-4DL	NEZ5964-15D	NEZ5964-15DL	NEZ5964-4D	NEZ5964-8DL	NEZ5964-8D
描述	RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, T-61, 2 PIN	RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, T-65, 2 PIN	RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, T-65, 2 PIN	RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, T-61, 2 PIN	RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, T-61, 2 PIN	RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, T-61, 2 PIN
厂商名称	California Eastern Labs	California Eastern Labs	California Eastern Labs	California Eastern Labs	California Eastern Labs	California Eastern Labs
包装说明	FLANGE MOUNT, R-CDFM-F2	FLANGE MOUNT, R-CDFM-F2	FLANGE MOUNT, R-CDFM-F2	FLANGE MOUNT, R-CDFM-F2	FLANGE MOUNT, R-CDFM-F2	FLANGE MOUNT, R-CDFM-F2
针数	2	2	2	2	2	2
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
外壳连接	SOURCE	SOURCE	SOURCE	SOURCE	SOURCE	SOURCE
配置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
最小漏源击穿电压	10 V	10 V	10 V	10 V	10 V	10 V
最大漏极电流 (ID)	1.5 A	6 A	6 A	1.5 A	3 A	3 A
FET 技术	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR
最高频带	C BAND	C BAND	C BAND	C BAND	C BAND	C BAND
JESD-30 代码	R-CDFM-F2	R-CDFM-F2	R-CDFM-F2	R-CDFM-F2	R-CDFM-F2	R-CDFM-F2
元件数量	1	1	1	1	1	1
端子数量	2	2	2	2	2	2
工作模式	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE
封装主体材料	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
极性/信道类型	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	YES	YES	YES	YES	YES	YES
端子形式	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
晶体管应用	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
晶体管元件材料	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE

NEZ5964-4DL

NEZ5964-4DL概述

NEZ5964-4DL规格参数

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