PRELIMINARY DATA SHEET
SILICON POWER MOS FET
NE5510179A
3.6 V OPERATION SILICON RF POWER LD-MOS FET
FOR 1.9 GHz 1 W TRANSMISSION AMPLIFIERS
DESCRIPTION
The NE5510179A is an N-channel silicon power MOS FET specially designed as the transmission driver amplifier
for 3.6 V GSM 1 800 and GSM 1 900 handsets. Dies are manufactured using NEC’s NEWMOS technology (NEC’s
0.6
µ
m WSi gate lateral-diffusion MOS FET) and housed in a surface mount package. The device can deliver 30.0
dBm output power with 50% power added efficiency at 1.9 GHz under the 3.6 V supply voltage, or can deliver 29
dBm output power at 2.8 V by varying the gate voltage as a power control function.
FEATURES
• High output power
• High linear gain
• Surface mount package
• Single supply
: P
out
= 30.0 dBm TYP. (V
DS
= 3.6 V, I
Dset
= 300 mA, f = 1.9 GHz, P
in
= 22 dBm)
: G
L
= 11.0 dB TYP. (V
DS
= 3.6 V, I
Dset
= 300 mA, f = 1.9 GHz, P
in
= 10 dBm)
: 5.7
×
5.7
×
1.1 mm MAX.
: V
DS
= 3.0 to 6.0 V
• High power added efficiency :
η
add
= 50% TYP. (V
DS
= 3.6 V, I
Dset
= 300 mA, f = 1.9 GHz, P
in
= 22 dBm)
APPLICATIONS
• Digital cellular phones
• Others
: 3.6 V driver amplifier for GSM 1 800/ GSM 1 900 class 1 handsets, or 4.8 V final stage
amplifier
: General purpose amplifiers for 1.6 to 2.0 GHz TDMA applications
ORDERING INFORMATION
Part Number
NE5510179A-T1
Package
79A
Marking
W1
Supplying Form
• 12 mm wide embossed taping
• Gate pin face the perforation side of the tape
• Qty 1 kpcs/reel
Remark
To order evaluation samples, consult your NEC sales representative.
Part number for sample order: NE5510179A
Caution Please handle this device at static-free workstation, because this is an electrostatic
sensitive device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P15192EJ1V0DS00 (1st edition)
Date Published February 2001 NS CP(K)
Printed in Japan
©
1999, 2001
NE5510179A
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
°
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current (Pulse Test)
Total Power Dissipation
Channel Temperature
Storage Temperature
Symbol
V
DS
V
GSO
I
D
I
D
Note
Ratings
8.5
5.0
0.5
1.0
1.6
125
−65
to +125
Unit
V
V
A
A
W
°C
°C
P
tot
T
ch
T
stg
Note
Duty Cycle
≤
50%, T
on
≤
1 ms
RECOMMENDED OPERATING CONDITIONS
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (Pulse Test)
Input Power
Symbol
V
DS
V
GSO
I
D
P
in
Duty Cycle
≤
50%, T
on
≤
1 ms
f = 1.9 GHz, V
DS
= 3.6 V
Test Conditions
MIN.
3.0
0
−
20
TYP.
3.6
2.0
0.45
22
MAX.
6.0
3.0
0.7
25
Unit
V
V
A
dBm
ELECTRICAL CHARACTERISTICS (T
A
= +25°C)
°
Parameter
Gate to Source Leak Current
Saturated Drain Current
(Zero Gate Voltage Drain Current)
Gate Threshold Voltage
Transconductance
Drain to Source Breakdown Voltage
Thermal Resistance
Linear Gain
Symbol
I
GSO
I
DSS
V
th
g
m
BV
DS
R
th
G
L
Test Conditions
V
GSS
= 5.0 V
V
DSS
= 8.5 V
V
DS
= 4.8 V, I
DS
= 1 mA
V
DS
= 4.8 V, I
DS
= 400 mA
I
DSS
= 10
µ
A
Channel to Case
f = 1.9 GHz, P
in
= 10 dBm,
V
DS
= 3.6 V, I
Dset
= 300 mA,
Note
f = 1.9 GHz, P
in
= 22 dBm,
V
DS
= 3.6 V, I
Dset
= 300 mA,
Note
MIN.
−
−
1.0
−
20
−
−
TYP.
−
−
1.4
840
24
10
11.0
MAX.
100
100
2.0
−
−
−
−
−
−
−
Unit
nA
nA
V
mS
V
°C/W
dB
Output Power
Operating Current
Power Added Efficiency
P
out
I
op
29.0
−
43
30.0
450
50
dBm
mA
%
η
add
Note
DC performance is 100% testing. RF performance is testing several samples per wafer.
Wafer rejection criteria for standard devices is 1 reject for several samples.
2
Preliminary Data Sheet P15192EJ1V0DS
NE5510179A
TYPICAL CHARACTERISTICS (T
A
= +25°C)
°
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
7.0
6.0
Drain Current I
D
(A)
SET DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
1 000
V
DS
= 3.5 V
Set Drain Current I
Dset
(mA)
V
GS
= 10 V MAX.
Step = 1.0 V
5.0
4.0
3.0
2.0
1.0
0
2
4
6
8
10
12
14
16
100
10
1
0.1
1.0
1.5
2.0
2.5
3.0
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
OUTPUT POWER, DRAIN CURRENT
vs. INPUT POWER
31
Drain Efficiency
η
d
(%)
Power Added Efficiency
η
add
(%)
DRAIN EFFICIENCY, POWER ADDED
EFFICIENCY vs. INPUT POWER
1 250
100
V
DS
= 3.5 V
I
Dset
= 200 mA
f = 1.9 GHz
Output Power P
out
(dBm)
Drain Current I
D
(mA)
26
V
DS
= 3.5 V
I
Dset
= 200 mA
f = 1.9 GHz
P
out
1 000
η
d
50
21
750
16
500
η
add
11
I
D
6
0
5
10
15
20
25
250
0
30
0
5
10
15
20
25
30
Input Power P
in
(dBm)
Input Power P
in
(dBm)
OUTPUT POWER, DRAIN CURRENT
vs. GATE TO SOURCE VOLTAGE
31
V
DS
= 3.5 V
f = 1.9 GHz
P
in
= 22 dBm
P
out
29
750
1 250
DRAIN EFFICIENCY, POWER ADDED
EFFICIENCY vs. GATE TO SOURCE VOLTAGE
100
Drain Efficiency
η
d
(%)
Power Added Efficiency
η
add
(%)
Output Power P
out
(dBm)
Drain Current I
D
(mA)
30
1 000
V
DS
= 3.5 V
f = 1.9 GHz
P
in
= 22 dBm
η
d
50
28
I
D
500
η
add
27
250
0
4.0
26
0.0
1.0
2.0
3.0
0
1.0
2.0
3.0
4.0
Gate to Source Voltage V
GS
(V)
Gate to Source Voltage V
GS
(V)
Preliminary Data Sheet P15192EJ1V0DS
3
NE5510179A
OUTPUT POWER, DRAIN CURRENT
vs. INPUT POWER
30
DRAIN EFFICIENCY, POWER ADDED
EFFICIENCY vs. INPUT POWER
1 250
100
Output Power P
out
(dBm)
Drain Current I
D
(mA)
25
1 000
Drain Efficiency
η
d
(%)
Power Added Efficiency
η
add
(%)
V
DS
= 2.8 V
I
Dset
= 200 mA
f = 1.9 GHz
P
out
V
DS
= 2.8 V
I
Dset
= 200 mA
f = 1.9 GHz
η
d
50
20
750
15
500
η
add
10
I
D
5
0
5
10
15
20
25
250
0
30
0
5
10
15
20
25
30
Input Power P
in
(dBm)
Input Power P
in
(dBm)
OUTPUT POWER, DRAIN CURRENT
vs. GATE TO SOURCE VOLTAGE
30
V
DS
= 2.8 V
f = 1.9 GHz
P
in
= 22 dBm
1 250
P
out
DRAIN EFFICIENCY, POWER ADDED
EFFICIENCY vs. GATE TO SOURCE VOLTAGE
100
Output Power P
out
(dBm)
Drain Current I
D
(mA)
29
1 000
Drain Efficiency
η
d
(%)
Power Added Efficiency
η
add
(%)
V
DS
= 2.8 V
f = 1.9 GHz
P
in
= 22 dBm
η
d
50
28
750
27
I
D
26
500
η
add
250
0
4.0
25
0.0
1.0
2.0
3.0
0
1.0
2.0
3.0
4.0
Gate to Source Voltage V
GS
(V)
Gate to Source Voltage V
GS
(V)
Remark
The graphs indicate nominal characteristics.
4
Preliminary Data Sheet P15192EJ1V0DS
NE5510179A
S-PARAMETERS
Test Conditions: V
DS
= 3.5 V, I
Dset
= 200 mA
Frequency
S
11
MAG.
0.834
0.809
0.809
0.812
0.821
0.829
0.837
0.854
0.856
0.865
0.876
0.880
0.888
0.895
0.899
0.902
0.901
0.912
0.908
0.911
0.913
0.914
0.920
0.914
0.918
0.921
0.918
0.920
0.921
0.925
ANG.
−121.1
−148.1
−158.2
−163.4
−166.8
−169.4
−171.4
−173.4
−175.0
−176.7
−178.4
180.0
178.0
176.5
174.9
172.9
170.9
169.3
167.0
165.1
162.2
160.8
158.3
156.1
153.5
151.5
149.1
147.1
145.0
142.9
dB
22.8
17.5
13.9
11.3
9.2
7.3
5.8
4.2
3.1
1.8
0.8
−0.4
−1.3
−2.2
−3.0
−3.7
−4.9
−5.4
−6.2
−6.6
−7.5
−8.2
−9.1
−9.1
−10.2
−10.5
−11.7
−11.4
−12.4
−12.4
GHz
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
S
21
MAG.
13.84
7.49
4.96
3.67
2.90
2.32
1.96
1.63
1.43
1.23
1.10
0.96
0.86
0.78
0.71
0.65
0.57
0.54
0.49
0.47
0.42
0.39
0.35
0.35
0.31
0.30
0.26
0.27
0.24
0.24
ANG.
111.3
93.6
84.6
77.1
71.2
66.2
61.7
57.3
52.6
50.3
46.2
44.3
39.9
38.1
34.2
33.3
29.9
27.1
24.4
23.8
20.5
19.1
15.2
13.4
13.0
12.2
9.5
4.8
6.4
4.8
dB
−30.2
−29.6
−29.6
−29.9
−29.9
−30.8
−31.4
−31.7
−32.4
−32.8
−33.6
−34.4
−34.9
−35.4
−35.4
−37.1
−37.7
−39.2
−40.0
−40.0
−43.1
−44.4
−44.4
−41.9
−44.4
−43.1
−43.1
−40.0
−40.9
−40.0
S
12
MAG.
0.031
0.033
0.033
0.032
0.032
0.029
0.027
0.026
0.024
0.023
0.021
0.019
0.018
0.017
0.017
0.014
0.013
0.011
0.010
0.010
0.007
0.006
0.006
0.008
0.006
0.007
0.007
0.010
0.009
0.010
S
22
ANG.
23.5
6.7
−2.6
−8.3
−13.3
−17.2
−18.3
−22.7
−24.6
−24.6
−29.3
−27.9
−28.1
−29.1
−31.7
−35.2
−28.2
−23.9
−23.0
−15.1
−3.7
−4.1
6.0
13.9
15.1
31.8
45.0
48.1
62.0
57.7
MAG.
0.656
0.717
0.741
0.756
0.779
0.792
0.807
0.818
0.832
0.841
0.856
0.863
0.870
0.880
0.888
0.893
0.894
0.908
0.909
0.919
0.906
0.919
0.920
0.926
0.925
0.920
0.919
0.940
0.928
0.938
ANG.
−154.0
−164.8
−168.5
−170.5
−171.6
−172.7
−173.4
−174.6
−175.5
−176.7
−177.5
−178.9
179.8
178.4
177.6
175.8
174.7
172.5
171.2
169.5
167.8
166.0
163.5
162.0
160.6
157.9
155.7
153.5
152.4
150.2
MAG
dB
Note
MSG
dB
Note
K
26.5
23.6
21.8
20.6
19.6
19.0
18.6
18.0
17.8
17.3
17.2
17.0
16.8
16.6
16.2
13.5
11.4
12.2
10.5
11.1
8.6
8.5
7.9
8.3
7.0
6.6
5.0
7.6
5.3
6.6
0.07
0.10
0.24
0.34
0.38
0.50
0.59
0.61
0.83
0.90
0.91
0.89
1.27
1.75
1.66
2.29
1.98
4.25
4.63
4.77
3.34
5.26
4.70
5.87
2.45
4.02
2.75
Note
When K
≥
1, the MAG (Maximum Available Gain) is used.
When K
<
1, the MSG (Maximum Stable Gain) is used.
MAG =
S
21
S
12
(K –
√
(K
2
– 1) )
1+
∆
2
−S
11
2
−S
22
2
,K=
,
2
⋅S
12
⋅S
21
S
21
MSG =
S
12
∆
= S
11
⋅
S
22
−
S
21
⋅
S
12
LARGE SIGNAL IMPEDANCE (V
DS
= 3.5 V, I
Dset
= 200 mA, P
in
= 22 dBm)
f (GHz)
1.9
Z
in
(Ω)
TBD
Z
OL
(Ω)
TBD
Note
Note
Z
OL
is the conjugate of optimum load impedance at given voltage, idling current, input power and frequency.
Preliminary Data Sheet P15192EJ1V0DS
5
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