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CMLDM7120GBKLEADFREE: 产品描述Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET; 产品类别分立半导体晶体管; 文件大小534KB，共2页; 制造商Central Semiconductor; 标准

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CMLDM7120GBKLEADFREE概述

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

CMLDM7120GBKLEADFREE规格参数

参数名称	属性值
是否Rohs认证	符合
厂商名称	Central Semiconductor
包装说明	,
Reach Compliance Code	compliant
配置	Single
最大漏极电流 (Abs) (ID)	1 A
FET 技术	METAL-OXIDE SEMICONDUCTOR
工作模式	ENHANCEMENT MODE
最高工作温度	150 °C
极性/信道类型	N-CHANNEL
最大功率耗散 (Abs)	0.35 W
表面贴装	YES

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CMLDM7120G

SURFACE MOUNT

N-CHANNEL

ENHANCEMENT-MODE

SILICON MOSFET

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMLDM7120G

is an Enhancement-mode N-Channel Field Effect

Transistor, manufactured by the N-Channel DMOS

Process, designed for high speed pulsed amplifier and

driver applications. This MOSFET offers Low rDS(ON)

and Low Threshold Voltage.

MARKING CODE: C7G

• Device is

Halogen Free

by design

SOT-563 CASE

APPLICATIONS:

•

Load/Power switches

•

Power supply converter circuits

•

Battery powered portable equipment

MAXIMUM RATINGS:

(TA=25°C)

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (Steady State)

Maximum Pulsed Drain Current, tp=10μs

Power Dissipation (Note 1)

Power Dissipation (Note 2)

Power Dissipation (Note 3)

Operating and Storage Junction Temperature

Thermal Resistance

FEATURES:

•

ESD protection up to 2kV

•

Low rDS(ON) (0.25Ω MAX @ VGS=1.5V)

•

High current (ID=1.0A)

•

Logic level compatibility

SYMBOL

VDS

VGS

IDM

TJ, Tstg

8.0

1.0

4.0

350

300

150

-65 to +150

357

MAX

1.2

1.1

0.10

0.14

0.25

UNITS

°C

°C/W

UNITS

μA

Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm

(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm

(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm

ELECTRICAL CHARACTERISTICS:

(TA=25°C unless

SYMBOL

TEST CONDITIONS

IGSSF, IGSSR VGS=8.0V, VDS=0

IDSS

VDS=20V, VGS=0

BVDSS

VGS=0, ID=250μA

VGS(th)

VDS=10V, ID=1.0mA

VSD

VGS=0, IS=1.0A

rDS(ON)

VGS=4.5V, ID=0.5A

rDS(ON)

VGS=2.5V, ID=0.5A

rDS(ON)

VGS=1.5V, ID=0.1A

Qg(tot)

VDS=10V, VGS=4.5V, ID=1.0A

Qgs

VDS=10V, VGS=4.5V, ID=1.0A

Qgd

VDS=10V, VGS=4.5V, ID=1.0A

gFS

VDS=10V, ID=0.5A

Crss

VDS=10V, VGS=0, f=1.0MHz

Ciss

VDS=10V, VGS=0, f=1.0MHz

Coss

VDS=10V, VGS=0, f=1.0MHz

ton

VDD=10V, VGS=5.0V, ID=0.5A

toff

VDD=10V, VGS=5.0V, ID=0.5A

otherwise noted)

MIN

TYP

0.5

0.075

0.10

0.20

2.4

0.25

0.65

2.5

220

120

140

R4 (2-August 2011)

CMLDM7120GBKLEADFREE相似产品对比

	CMLDM7120GBKLEADFREE	CMLDM7120GTR	CMLDM7120GBK
描述	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET	Small Signal Field-Effect Transistor, 1A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PICOMINI-6	Small Signal Field-Effect Transistor, 1A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PICOMINI-6
是否Rohs认证	符合	不符合	不符合
厂商名称	Central Semiconductor	Central Semiconductor	Central Semiconductor
包装说明	,	SMALL OUTLINE, R-PDSO-F6	SMALL OUTLINE, R-PDSO-F6
Reach Compliance Code	compliant	not_compliant	not_compliant
配置	Single	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
最大漏极电流 (Abs) (ID)	1 A	1 A	1 A
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
最高工作温度	150 °C	150 °C	150 °C
极性/信道类型	N-CHANNEL	N-CHANNEL	N-CHANNEL
最大功率耗散 (Abs)	0.35 W	0.35 W	0.35 W
表面贴装	YES	YES	YES
针数	-	6	6
ECCN代码	-	EAR99	EAR99
最小漏源击穿电压	-	20 V	20 V
最大漏极电流 (ID)	-	1 A	1 A
最大漏源导通电阻	-	0.14 Ω	0.14 Ω
JESD-30 代码	-	R-PDSO-F6	R-PDSO-F6
JESD-609代码	-	e0	e0
元件数量	-	1	1
端子数量	-	6	6
封装主体材料	-	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	-	RECTANGULAR	RECTANGULAR
封装形式	-	SMALL OUTLINE	SMALL OUTLINE
峰值回流温度（摄氏度）	-	NOT SPECIFIED	NOT SPECIFIED
认证状态	-	Not Qualified	Not Qualified
端子面层	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
端子形式	-	FLAT	FLAT
端子位置	-	DUAL	DUAL
处于峰值回流温度下的最长时间	-	NOT SPECIFIED	NOT SPECIFIED
晶体管应用	-	SWITCHING	SWITCHING
晶体管元件材料	-	SILICON	SILICON

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